公开(公告)号：US10035701B2

公开(公告)日：2018-07-31

申请号：US15305799

申请日：2014-11-05

Applicant: ADVANCED SEMICONDUCTOR MANUFACTURING CO. LTD

Inventor： Yuanjun Xu ,  Yilin Yan ,  Weijia Xue

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2201/0198 ,  B81C2201/053

Abstract: There is provided a method for forming a composite cavity and a composite cavity formed using the method. The method comprises the following steps: providing a silicon substrate (101); forming an oxide layer on the front side thereof; patterning the oxide layer to form one or more grooves (103), the position of the groove (103) corresponding to the position of small cavity (109) to be formed; providing a bonding wafer (104), which is bonded to the patterned oxide layer to form one or more closed micro-cavity structures (105) between the silicon substrate (101) and the bonding wafer (104); forming a protective film (106) over the bonding wafer (104) and forming a masking layer (107) on the back side of the silicon substrate (101); patterning the masking layer (107), the pattern of the masking layer (107) corresponding to the position of a large cavity (108) to be formed; using the masking layer (107) as a mask, etching the silicon substrate (101) from the back side until the oxide layer at the front side thereof to form the large cavity (108) in the silicon substrate (101); and using the masking layer (107) and the oxide layer as a mask, etching the bonding wafer (104) from the back side through the silicon substrate (101) until the protective film (106) thereover to form one or more small cavities (109) in the bonding wafer (104). The uniformity of thickness of the semiconductor medium layer where the small cavity (109) in the composite cavity is located is well controlled by the present invention.

公开(公告)号：US20180201504A1

公开(公告)日：2018-07-19

申请号：US15923599

申请日：2018-03-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R31/00 ,  H04R19/00 ,  H04R19/04

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US10017378B2

公开(公告)日：2018-07-10

申请号：US15265434

申请日：2016-09-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/0792

Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.

公开(公告)号：US10003890B2

公开(公告)日：2018-06-19

申请号：US15119878

申请日：2015-06-25

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang Hu

IPC: H04R19/04 ,  H04R7/14 ,  H04R7/12 ,  B81B3/00 ,  H04R7/16

CPC classification number: H04R19/04 ,  B81B3/0037 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  G01L9/0045 ,  G01L9/0073 ,  H04R7/12 ,  H04R7/14 ,  H04R7/16 ,  H04R19/005 ,  H04R2201/003

Abstract: A MEMS microphone includes a substrate (100), a supporting part (200), an upper polar plate (300) and a lower polar plate (400). The substrate (100) is provided with an opening (120) penetrating the middle thereof; the lower polar plate (400) straddles the opening (120); the supporting part (200) is fixed on the lower polar plate (400); the upper polar plate (300) is affixed to the supporting part (200); an accommodating cavity (500) is formed among the supporting part (200), the upper polar plate (300) and the lower polar plate (400); a recess (600) opposite to the accommodating cavity (500) is arranged in an intermediate region of at least one of the upper polar plate (300) and the lower polar plate (400), and insulation is achieved between the upper polar plate (300) and a lower polar plate (400).

公开(公告)号：US10000374B2

公开(公告)日：2018-06-19

申请号：US15506068

申请日：2015-06-23

Applicant: Robert Bosch GmbH

Inventor： Christoph Schelling ,  Benedikt Stein ,  Michael Stumber

IPC: H01L29/84 ,  B81B3/00

CPC classification number: B81B3/0086 ,  B81B2201/01 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00801

Abstract: A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si1-x-yCxNy)-based layer.

公开(公告)号：US09998812B2

公开(公告)日：2018-06-12

申请号：US15043831

申请日：2016-02-15

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Horst Theuss ,  Thomas Mueller

IPC: H04R1/08 ,  B81B7/00 ,  H04R1/04 ,  H04R1/40 ,  H04R19/00

CPC classification number: H04R1/083 ,  B81B7/0061 ,  B81B2201/0257 ,  H01L2224/95 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15 ,  H01L2924/181 ,  H01L2924/19106 ,  H04R1/04 ,  H04R1/406 ,  H04R19/005 ,  H04R2201/003 ,  H04R2410/05 ,  H04R2499/11

Abstract: A surface mountable microphone package comprises a first microphone and a second microphone. Furthermore, the surface mountable microphone package comprises a first opening for the first microphone and a second opening for the second microphone. The first opening and the second opening are arranged on opposite sides of the surface mountable microphone package.

公开(公告)号：US09992563B2

公开(公告)日：2018-06-05

申请号：US15417207

申请日：2017-01-26

Applicant: Jinyu Zhang ,  Hu Chen

Inventor： Jinyu Zhang ,  Hu Chen

IPC: H04R19/04 ,  H04R1/02 ,  H04R19/00 ,  H04R1/08

CPC classification number: H04R1/023 ,  B81B2201/0257 ,  H04R1/086 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003 ,  H04R2499/11

Abstract: An MEMS microphone is provided in the present disclosure. The MEMS microphone includes a protective structure comprising a housing and a PCB substrate covering the housing to form a receiving space, the housing is provided with a sound hole, an MEMS chip with a back cavity, received in the receiving space and fixed on the PCB substrate, the back cavity is communicated with the sound hole, and the MEMS chip comprises a first surface away from the PCB substrate and a second surface opposite to the first surface; and a waterproof part, bonded to the first surface of the MEMS chip.

公开(公告)号：US20180152801A1

公开(公告)日：2018-05-31

申请号：US15824716

申请日：2017-11-28

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

Inventor： Yijun CHEN ,  Yu HUA ,  Kuanchieh YU ,  Chao WANG ,  Shan ZHANG

IPC: H04R31/00 ,  H01L21/311 ,  H01L21/48

CPC classification number: H04R31/006 ,  B81B7/0061 ,  B81B2201/0257 ,  H01L21/31105 ,  H01L21/4857 ,  H04R19/005 ,  H04R31/00 ,  H04R2410/00

Abstract: A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a substrate structure; forming a first metal layer on the substrate structure; forming a second metal layer on the first metal layer; forming a first oxide layer on the second metal layer at a first temperature; and conducting the remaining manufacturing processes including thermal processes at a second temperature that is higher than the first temperature. This method reduces the concentration of the first metal diffused into the surface of the second metal layer during the thermal processes, thus reducing the amount of the oxide of the first metal formed on the surface of the second metal layer. Therefore, it is beneficial to the establishment of metal wire connections.

公开(公告)号：US20180152793A1

公开(公告)日：2018-05-31

申请号：US15826788

申请日：2017-11-30

Applicant: Infineon Technologies Austria AG

Inventor： Stefan JOST ,  Wolfgang FRIZA ,  Stefan GEISSLER ,  Soenke PIRK

IPC: H04R9/08 ,  B81B7/00 ,  B81C1/00 ,  H04R31/00

CPC classification number: H04R9/08 ,  B81B7/0006 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00166 ,  H04R19/005 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003

Abstract: A MEMS device is provided. The MEMS device includes a membrane, and at least one electrode arranged at a distance from the membrane. The at least one electrode includes a layer stack. The layer stack includes a first insulation layer, a first conductive layer arranged thereabove, a second insulation layer arranged thereabove, a second conductive layer arranged thereabove, and a third insulation layer arranged thereabove.

公开(公告)号：US20180152792A1

公开(公告)日：2018-05-31

申请号：US15826255

申请日：2017-11-29

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Tsjerk Hans HOEKSTRA ,  Axel THOMSEN ,  Colin Robert JENKINS ,  Aleksey Sergeyevich KHENKIN

IPC: H04R9/08 ,  H04R29/00 ,  B81B3/00

CPC classification number: H04R9/08 ,  B81B3/0086 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  H04R19/005 ,  H04R19/04 ,  H04R29/004 ,  H04R2201/003

Abstract: A MEMS transducer comprising: a flexible membrane, the flexible membrane comprising a first membrane electrode; a back plate, the back plate comprising a first back plate electrode; wherein the back plate is supported in a spaced relation with respect to the flexible membrane. The MEMS transducer is configured to provide electrical connections to the first membrane electrode and the first back plate electrode. The flexible membrane further comprises a second membrane electrode, the second membrane electrode being electrically isolated from the first membrane electrode, wherein the first membrane electrode and the second membrane electrode are arranged to reduce variation in electrostatic forces across the flexible membrane.