NANOTUBE ELECTRONICS TEMPLATED SELF-ASSEMBLY
    54.
    发明申请
    NANOTUBE ELECTRONICS TEMPLATED SELF-ASSEMBLY 审中-公开
    NANOTUBE电子模拟自组装

    公开(公告)号:US20130264711A1

    公开(公告)日:2013-10-10

    申请号:US13897480

    申请日:2013-05-20

    Abstract: A fabricated substrate has at least one plurality of posts. The plurality is fabricated such that the two posts are located at a predetermined distance from one another. The substrate is exposed to a fluid matrix containing functionalized carbon nanotubes. The functionalized carbon nanotubes preferentially adhere to the plurality of posts rather than the remainder of the substrate. A connection between posts of the at least one plurality of posts is induced by adhering one end of the functionalized nanotube to one post and a second end of the functionalized carbon nanotube to a second post.

    Abstract translation: 制造的基板具有至少多个柱。 多个制造成使得两个柱彼此相隔预定距离。 将基底暴露于含有官能化碳纳米管的流体基质。 功能化的碳纳米管优先粘附到多个柱而不是衬底的其余部分。 通过将功能化纳米管的一端粘附到官能化碳纳米管的一个柱和第二端到第二柱来诱导至少一个多个柱的柱之间的连接。

    METHOD OF MANUFACTURING CORELESS SUBSTRATE HAVING FILLED VIA PAD
    55.
    发明申请
    METHOD OF MANUFACTURING CORELESS SUBSTRATE HAVING FILLED VIA PAD 审中-公开
    制造具有通过垫片填充的无孔基材的方法

    公开(公告)号:US20130243941A1

    公开(公告)日:2013-09-19

    申请号:US13889064

    申请日:2013-05-07

    Abstract: A method of manufacturing a coreless substrate having filled via pads, including: forming a first insulating layer on one side of a carrier forming a build-up layer including a build-up insulating layer and a build-up circuit layer having a build-up via on the first insulating layer, and forming a second insulating layer on the build-up layer; removing the carrier, and forming via-holes in the first and second insulating layers; and conducting a filled plating process in the via-holes of the first and second insulating layers thus forming first and second filled via pads therein.

    Abstract translation: 一种制造具有填充通孔焊盘的无芯基板的方法,包括:在载体的一侧上形成第一绝缘层,形成包含积聚绝缘层的堆积层和具有堆积层的积聚电路层 通过所述第一绝缘层,并且在所述积层上形成第二绝缘层; 移除所述载体,以及在所述第一和第二绝缘层中形成通孔; 并且在第一和第二绝缘层的通孔中进行填充电镀处理,从而在其中形成第一和第二填充的通孔焊盘。

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