公开(公告)号：US20130327391A1

公开(公告)日：2013-12-12

申请号：US13899153

申请日：2013-05-21

Applicant: FIRST SOLAR, INC

Inventor： Markus Gloeckler ,  Akhlesh Gupta ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0216 ,  H01L21/02

CPC classification number: H01L31/1864 ,  H01L21/02474 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02672 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0296 ,  H01L31/073

Abstract: A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers.

Abstract translation: 一种用于制造和光伏器件的方法，其包括具有卤化物热处理表面的半导体层，其增加至少一个半导体层内的晶粒生长并改善半导体层之间的界面。 卤化物热处理包括在与半导体层相邻或部分的表面上施加和加热卤化物的多个涂层。

公开(公告)号：US20130255999A1

公开(公告)日：2013-10-03

申请号：US13847821

申请日：2013-03-20

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Stephen P. Murphy ,  Raymond Domsic ,  Wenlai Feng

IPC: H05K7/06 ,  H01R43/00 ,  H05K1/02

CPC classification number: H05K7/06 ,  H01L31/02013 ,  H01L31/02021 ,  H01R13/5221 ,  H02S40/34 ,  Y02E10/50 ,  Y10T29/49174

Abstract: Described embodiments provide a conductor interface for a photovoltaic module that includes a raised feature on a bottom surface. Methods of forming such structures are also disclosed, as are photovoltaic modules containing the conductor interface.

Abstract translation: 描述的实施例提供了一种用于光伏模块的导体接口，其包括底表面上的凸起特征。 还公开了形成这种结构的方法，以及包含导体界面的光伏模块也是如此。

公开(公告)号：US20130125975A1

公开(公告)日：2013-05-23

申请号：US13682829

申请日：2012-11-21

Applicant: First Solar, Inc.

Inventor： Richard S. Malik, JR. ,  Stephen P. Murphy ,  Thomas Truman

IPC: H05K5/02 ,  H01L31/02 ,  H01L31/18

CPC classification number: H05K5/0247 ,  H01L31/02013 ,  H02S40/34 ,  Y02E10/50

Abstract: Disclosed embodiments include a photovoltaic module including a conductor interface for electrically connecting tabs of internal module wiring with external conductors, where the conductor interface includes retention surfaces for retaining the tabs and external conductors in an electrically connected position. Methods of manufacturing a photovoltaic module are also disclosed.

Abstract translation: 公开的实施例包括光伏模块，其包括导体接口，用于将内部模块布线的外部导体电连接到导体接口，其中导体接口包括用于将突片和外部导体保持在电气连接位置的保持表面。 还公开了制造光伏模块的方法。

公开(公告)号：US20130118544A1

公开(公告)日：2013-05-16

申请号：US13675372

申请日：2012-11-13

Applicant: First Solar, Inc.

Inventor： Richard Malik

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/02008 ,  H01L31/02013 ,  H01L31/048 ,  H02S40/34 ,  Y02E10/50

Abstract: Disclosed embodiments include photovoltaic modules having a conductor interface and a heat-activated adhesive layer configured to bond the conductor interface to the module. Methods of manufacturing photovoltaic modules having a conductor interface and heat-activated adhesive layer are also disclosed.

Abstract translation: 所公开的实施例包括具有导体接口和被配置为将导体接口连接到模块的热活化粘合剂层的光伏模块。 还公开了具有导体界面和热活化粘合剂层的光伏模块的制造方法。

公开(公告)号：US20130095577A1

公开(公告)日：2013-04-18

申请号：US13645000

申请日：2012-10-04

Applicant: FIRST SOLAR, INC.

Inventor： Erel Milshtein

IPC: G01B11/06 ,  H01L21/02

CPC classification number: G01B11/0683 ,  C23C16/45525 ,  C23C16/52 ,  G01B11/0625 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02E10/543

Abstract: Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.

Abstract translation: 这里描述了一种用于测量沉积的半导体材料的厚度的方法和装置。 色度计具有用光辐射照射沉积的半导体材料的一部分的光源，收集并测量与来自沉积的半导体材料的反射辐射相关的颜色信息的传感器，以及接收与反射辐射有关的颜色信息的处理器 并且计算半导体材料的厚度。 处理器可以控制半导体材料沉积设备。

公开(公告)号：US20250160034A1

公开(公告)日：2025-05-15

申请号：US19023233

申请日：2025-01-15

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H10F71/00 ,  H10F10/13 ,  H10F10/162 ,  H10F77/123 ,  H10F77/20

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

公开(公告)号：US20250142978A1

公开(公告)日：2025-05-01

申请号：US19006785

申请日：2024-12-31

Applicant: First Solar, Inc.

Inventor： David Eaglesham ,  Peter V. Meyers

IPC: H10F10/162 ,  H10F10/16 ,  H10F77/123

Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

公开(公告)号：US20250120219A1

公开(公告)日：2025-04-10

申请号：US18914841

申请日：2024-10-14

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0216 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US12261231B2

公开(公告)日：2025-03-25

申请号：US17751189

申请日：2022-05-23

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US12238943B2

公开(公告)日：2025-02-25

申请号：US18378128

申请日：2023-10-09

Applicant: First Solar, Inc.

Inventor： Kristian William Andreini ,  Holly Ann Blaydes ,  Jongwoo Choi ,  Adam Fraser Halverson ,  Eugene Thomas Hinners ,  William Hullinger Huber ,  Yong Liang ,  Joseph John Shiang

IPC: H01L31/0224 ,  H01L31/0296 ,  H01L31/065 ,  H01L31/073 ,  H10F10/13 ,  H10F10/162 ,  H10F71/00 ,  H10F77/123 ,  H10F77/20

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.