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公开(公告)号：US10431436B2
公开(公告)日：2019-10-01
申请号：US15690414
申请日：2017-08-30
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： Huma Ashraf , Kevin Riddell , Roland Mumford , Grant Baldwin
Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.
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公开(公告)号：US20190272980A1
公开(公告)日：2019-09-05
申请号：US16418447
申请日：2019-05-21
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： STEPHEN R. BURGESS , ANTHONY PAUL WILBY
Abstract: A method is for cleaning a plasma etching apparatus of the type used to etch a substrate and having at least one chamber. The method includes sputtering a metallic material from an electrically conductive coil which is positioned within the at least one chamber onto an interior surface of the at least one chamber to perform a cleaning function.
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公开(公告)号：US10385471B2
公开(公告)日：2019-08-20
申请号：US15887476
申请日：2018-02-02
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： John Macneil
Abstract: According to the invention a method of removing electrolyte from an electrochemical deposition or polishing chamber comprising the steps of: providing an electrochemical deposition or polishing chamber comprising a support for a substrate, the support having an in-use position; a housing having an interior surface and a fluid outlet pathway for removing electrolyte from the chamber, wherein the fluid outlet pathway includes one or more slots which extend into the housing from at least one slotted opening formed in the interior surface; a seal for sealing the housing to a peripheral portion of a surface of a substrate position on the support in its in-use position; and a tilting mechanism for tilting the chamber in order to assist in removing electrolyte from the housing through the fluid outlet pathway; using an electrolyte to perform an electrochemical deposition or polishing processing on a substrate positioned on the support in its in-use position; and tilting the chamber using the tilting mechanism in order to assist in removing electrolyte from the housing through the fluid outlet pathway.
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公开(公告)号：US20180171503A1
公开(公告)日：2018-06-21
申请号：US15887476
申请日：2018-02-02
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： John MACNEIL
CPC classification number: C25D17/02 , C25D3/38 , C25D17/001 , C25D17/004 , C25D21/00 , C25F3/16 , C25F7/00
Abstract: According to the invention a method of removing electrolyte from an electrochemical deposition or polishing chamber comprising the steps of: providing an electrochemical deposition or polishing chamber comprising a support for a substrate, the support having an in-use position; a housing having an interior surface and a fluid outlet pathway for removing electrolyte from the chamber, wherein the fluid outlet pathway includes one or more slots which extend into the housing from at least one slotted opening formed in the interior surface; a seal for sealing the housing to a peripheral portion of a surface of a substrate position on the support in its in-use position; and a tilting mechanism for tilting the chamber in order to assist in removing electrolyte from the housing through the fluid outlet pathway; using an electrolyte to perform an electrochemical deposition or polishing processing on a substrate positioned on the support in its in-use position; and tilting the chamber using the tilting mechanism in order to assist in removing electrolyte from the housing through the fluid outlet pathway.
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公开(公告)号：US20180158689A1
公开(公告)日：2018-06-07
申请号：US15830969
申请日：2017-12-04
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： ROLAND MUMFORD
IPC: H01L21/3065 , H01L21/67 , H01L21/768
CPC classification number: H01L21/3065 , H01L21/67069 , H01L21/76898
Abstract: According to the invention there is provided a method of smoothing a surface of a silicon substrate comprising the steps of: providing a silicon substrate having a backside surface, wherein the silicon substrate has been ground to leave the backside surface with an associated roughness; and smoothing the backside surface of the silicon substrate using a plasma etch process; in which the plasma etch process comprises the steps of performing a first plasma etch step which forms a plurality of protrusions that upstand from the backside surface; and performing a second plasma etch step which at least partially etches the protrusions to provide a smoothed backside surface which exhibits specular reflection.
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Patent Agency Ranking
公开(公告)号：US20180144911A1
公开(公告)日：2018-05-24
申请号：US15690414
申请日：2017-08-30
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： HUMA ASHRAF , KEVIN RIDDELL , ROLAND MUMFORD , GRANT BALDWIN
CPC classification number: H01J37/32935 , H01J37/32082 , H01J37/32715 , H01J37/32724 , H01J37/32917 , H01J2237/334 , H01L21/67069 , H01L21/67288
Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.
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公开(公告)号：US20180005837A1
公开(公告)日：2018-01-04
申请号：US15626250
申请日：2017-06-19
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： OLIVER J ANSELL , DAVID A TOSSELL , GAUTHAM RAGUNATHAN
IPC: H01L21/3065 , H01L21/67 , H01L21/683 , H01L21/78
CPC classification number: H01L21/3065 , H01J37/32917 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01L21/32136 , H01L21/67063 , H01L21/6836 , H01L21/78 , H01L22/12 , H01L22/26 , H01L41/338 , H01L2221/68327 , H01S5/02 , H01S5/0203
Abstract: A method is for detecting a condition associated with a final phase of a plasma dicing process. The method includes providing a non-metallic substrate having a plurality of dicing lanes defined thereon, plasma etching through the substrate along the dicing lanes, wherein during the plasma etching infrared emission emanating from at least a portion of the dicing lanes is monitored so that an increase in infrared emission from the dicing lanes is observed as the final phase of the plasma dicing operation is entered, and detecting the condition associated with the final phase of the plasma dicing from the monitored infrared emission.
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公开(公告)号：US20170338124A1
公开(公告)日：2017-11-23
申请号：US15588779
申请日：2017-05-08
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： NICOLAS LAUNAY , MAXINE VARVARA
IPC: H01L21/3065 , H01J37/32 , H01J37/305 , H01L21/67 , H01L21/768 , H01L21/683
CPC classification number: H01L21/30655 , H01J37/3053 , H01J37/32082 , H01J37/32366 , H01J37/32403 , H01J37/32422 , H01J37/32577 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H01L21/76898
Abstract: A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.
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公开(公告)号：US09803272B2
公开(公告)日：2017-10-31
申请号：US14532098
申请日：2014-11-04
Applicant: SPTS TECHNOLOGIES LIMITED
Inventor： Yun Zhou , Rhonda Hyndman , Stephen R Burgess
CPC classification number: C23C14/0036 , C01B33/12 , C23C14/10 , C23C14/3485 , C23C14/35
Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.
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公开(公告)号：US09783886B2
公开(公告)日：2017-10-10
申请号：US15064631
申请日：2016-03-09
Applicant: SPTS Technologies Limited
Inventor： Daniel T Archard , Stephen R Burgess , Mark I Carruthers , Andrew Price , Keith E Buchanan , Katherine Crook
IPC: C23C16/455 , H01J37/32 , C23C16/513
CPC classification number: C23C16/455 , C23C16/513 , H01J37/32633 , H01J37/32834
Abstract: A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.
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