公开(公告)号：US11315760B2

公开(公告)日：2022-04-26

申请号：US16791947

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20220084794A1

公开(公告)日：2022-03-17

申请号：US17023186

申请日：2020-09-16

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  James D. Carducci ,  Kartik Ramaswamy ,  Ajit Balakrishna ,  Shahid Rauf ,  Jason Kenney

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455

Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow.

公开(公告)号：US20210313147A1

公开(公告)日：2021-10-07

申请号：US17353668

申请日：2021-06-21

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01J37/32

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US11101113B2

公开(公告)日：2021-08-24

申请号：US16595339

申请日：2019-10-07

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32 ,  H01L21/67

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US11043361B2

公开(公告)日：2021-06-22

申请号：US15793802

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

公开(公告)号：US10249470B2

公开(公告)日：2019-04-02

申请号：US13897585

申请日：2013-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/04 ,  H01J37/32 ,  H05H1/46

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.

公开(公告)号：US20180374686A1

公开(公告)日：2018-12-27

申请号：US15630828

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/54

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

公开(公告)号：US20180374685A1

公开(公告)日：2018-12-27

申请号：US15630658

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an electrode assembly comprising a plurality of conductors spaced apart from and extending laterally across the workpiece support in a parallel coplanar array, a first RF power source to supply a first RF power to the electrode assembly, and a dielectric bottom plate between the electrode assembly and the workpiece support, the dielectric bottom plate providing an RF window between the electrode assembly and the plasma chamber.

公开(公告)号：US20180261429A1

公开(公告)日：2018-09-13

申请号：US15980621

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US20180218873A1

公开(公告)日：2018-08-02

申请号：US15936154

申请日：2018-03-26

Applicant: Applied Materials, Inc.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/04 ,  H05H1/46 ,  H01J37/32

CPC classification number: H01J37/04 ,  H01J37/321 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor includes a window assembly, inner, middle and outer coil antennas adjacent the window assembly, inner, middle and outer current distributors respectively coupled to the inner, middle and outer coil antennas, a ceiling plate overlying the window assembly, first, second and third RF power terminals, and first, second and third axial RF power feeds connected between respective ones of the first, second and third RF power terminals and respective ones of the inner, middle and outer current distributors. The third axial RF power feed includes an outer RF power distribution cylinder surrounding the first and second RF axial power feeds. Plural spaced-apart reactance elements are electrically connected to the outer RF power distribution cylinder.