公开(公告)号：US11033930B2

公开(公告)日：2021-06-15

申请号：US16242184

申请日：2019-01-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC: B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  B05D1/18

Abstract: Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US11018009B2

公开(公告)日：2021-05-25

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang Jian ,  Wei Tang ,  Chi-Chou Lin ,  Paul Ma ,  Yixiong Yang ,  Mei Chang ,  Wenyi Liu

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/49 ,  H01L21/02 ,  H01L21/324 ,  H01L29/78 ,  H01L21/67 ,  H01L29/66

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

公开(公告)号：US20210123136A1

公开(公告)日：2021-04-29

申请号：US17084184

申请日：2020-10-29

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Liqi Wu ,  Pratham Jain ,  Jeffrey W. Anthis ,  Mark Saly ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34 ,  C23C16/56

Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US10395916B2

公开(公告)日：2019-08-27

申请号：US15699110

申请日：2017-09-08

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US20180340255A1

公开(公告)日：2018-11-29

申请号：US15989827

申请日：2018-05-25

Applicant: Applied Materials, Inc.

Inventor： Jing Zhou ,  Jacqueline S. Wrench ,  Jiang Lu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/40 ,  H01L21/02 ,  C23C16/455

Abstract: Embodiments of the invention provide methods of depositing a CoOx film at lower processing temperatures and with a higher deposition rate. The methods disclosed herein use cobalt tricarbonyl compounds to form the CoOx film. Both atomic layer deposition and chemical vapor deposition techniques are useful in depositing the CoOx film.

公开(公告)号：US10121671B2

公开(公告)日：2018-11-06

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/44 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US20180195167A1

公开(公告)日：2018-07-12

申请号：US15863203

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Feng F. Chen ,  Jeffrey W. Anthis ,  David Thompson ,  Mei Chang

IPC: C23C16/06 ,  C23C16/455

CPC classification number: C23C16/06 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76838

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.

公开(公告)号：US20180187304A1

公开(公告)日：2018-07-05

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US09914995B2

公开(公告)日：2018-03-13

申请号：US14920001

申请日：2015-10-22

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/18 ,  C23C16/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/458

CPC classification number: C23C16/18 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4583 ,  H01L21/28562 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US20180053667A1

公开(公告)日：2018-02-22

申请号：US15795575

申请日：2017-10-27

Applicant: Applied Materials, Inc.

Inventor： Ilker Durukan ,  Joel M. Huston ,  Dien-Yeh Wu ,  Chien-Teh Kao ,  Mei Chang

IPC: H01L21/67

CPC classification number: H01L21/67126 ,  H01L21/6719

Abstract: Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.