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公开(公告)号:US20180152788A1
公开(公告)日:2018-05-31
申请号:US15636423
申请日:2017-06-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Matteo Perletti , Stefano Losa , Lorenzo Tentori , Maria Carolina Turi
CPC classification number: H04R7/18 , B81B3/0054 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81C1/00158 , B81C2201/0132 , H04R19/005 , H04R19/04
Abstract: An electroacoustic MEMS transducer, having a substrate of semiconductor material; a through cavity in the substrate; a back plate carried by the substrate through a plate anchoring structure, the back plate having a surface facing the through cavity; a fixed electrode, extending over the surface of the back plate; a membrane of conductive material, having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate through a membrane anchoring structure; and a chamber between the membrane and the back plate, peripherally delimited by the membrane anchoring structure.
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公开(公告)号:US09980051B2
公开(公告)日:2018-05-22
申请号:US15311127
申请日:2015-05-13
Applicant: USound GmbH
Inventor: Andrea Rusconi Clerici , Ferruccio Bottoni
CPC classification number: H04R19/005 , B81B3/0021 , B81B3/0037 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , H04R7/18 , H04R17/00 , H04R17/005 , H04R23/02 , H04R2201/003
Abstract: The invention relates to a MEMS loudspeaker (1) for generating sound waves in the audible wavelength spectrum, with a carrier substrate (2) that features a substrate cavity (6) with two substrate openings (7, 8), which are formed on two opposite sides of the carrier substrate (2), an actuator structure (3), in particular a piezoelectric actuator structure, which is arranged in the area of one of the two substrate openings (7, 8) and is connected to the carrier substrate (2) in its edge area, and a membrane (4) anchored in its edge area, which, by means of the actuator structure (3), can be set into vibration for generating sound waves. In accordance with the invention, in a cross-sectional view of the MEMS loudspeaker (1), the membrane (4) is spaced at a distance from the actuator structure (3), such that an intermediate cavity (13) is formed between these two. Furthermore, the MEMS loudspeaker (1) features a coupling element (13) arranged in the intermediate cavity (13), which connects the actuator structure (3) to the membrane (4) and may vibrate with this with respect to the carrier substrate (2).
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公开(公告)号:US09938140B2
公开(公告)日:2018-04-10
申请号:US15206836
申请日:2016-07-11
Applicant: Infineon Technologies AG
Inventor: Alfons Dehe , Stephan Pindl , Bernhard Knott , Carsten Ahrens
CPC classification number: B81C1/00825 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00873 , B81C2201/017 , B81C2201/053 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
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公开(公告)号:US20180072560A1
公开(公告)日:2018-03-15
申请号:US15702034
申请日:2017-09-12
Applicant: Robert Bosch GmbH
Inventor: Helmut Grutzeck , Jochen Reinmuth
CPC classification number: B81B3/0037 , B81B3/0021 , B81B2201/0257 , B81B2201/0264 , B81B2201/033 , B81B2203/0127 , B81B2203/0172 , B81B2203/04 , G01L9/0072 , H02N1/008 , H04R19/005 , H04R19/04 , H04R2201/003
Abstract: A micromechanical component having a substrate, a membrane that covers an opening structured into the substrate from a first side of the substrate and that can be warped by a pressure difference between the first side of the substrate and a second side, oriented away from the first side, of the substrate, and having at least one actuator electrode that is connected at least to the membrane in such a way that the at least one actuator electrode can be displaced relative to the substrate by a warping of the membrane, the at least one actuator electrode being capable of being displaced relative to the substrate by the warping of the membrane, in each case along a displacement axis oriented parallel to the second side of the substrate. A production method for a micromechanical component is also described.
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公开(公告)号:US09914636B2
公开(公告)日:2018-03-13
申请号:US15212334
申请日:2016-07-18
Applicant: Robert Bosch GmbH
Inventor: Thomas Buck , Fabian Purkl , Michael Stumber , Rolf Scheben , Benedikt Stein , Christoph Schelling
CPC classification number: B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2207/015 , B81B2207/07 , H04R17/02 , H04R2201/003
Abstract: A MEMS microphone component including at least one sound-pressure-sensitive diaphragm element is formed in the layer structure of the MEMS component, which spans an opening in the layer structure. The diaphragm element is attached via at least one column element in the central area of the opening to the layer structure of the component. The deflections of the diaphragm element are detected with the aid of at least one piezosensitive circuit element, which is implemented in the layer structure of the diaphragm element and is situated in the area of the attachment of the diaphragm element to the column element.
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公开(公告)号:US20180068888A1
公开(公告)日:2018-03-08
申请号:US15679914
申请日:2017-08-17
Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
Inventor: XIANCHAO WANG
IPC: H01L21/768 , H01L23/532 , H01L21/02 , H01L21/3205 , H01L29/423
CPC classification number: H01L21/76804 , B81B2201/0257 , B81C1/00587 , B81C2201/014 , H01L21/02326 , H01L21/02505 , H01L21/3205 , H01L21/56 , H01L23/5329 , H01L29/4232 , H01L2924/0002
Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a substrate and a multilayer film having a step-shaped portion on the substrate; forming a protective layer covering the step-shaped portion of the multilayer film; forming a capping layer having a plurality of steps on the protective layer covering the semiconductor substrate; and removing at least one layer of the multilayer film to form a cavity that is defined by the capping layer and a remaining multilayer film that has the at least one layer removed. The thus formed semiconductor device does not have cracks in the steps of the capping layer when performing an etch process, thereby improving the performance of the semiconductor device.
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公开(公告)号:US20180063616A1
公开(公告)日:2018-03-01
申请号:US15335697
申请日:2016-10-27
Applicant: LINGSEN PRECISION INDUSTRIES, LTD.
Inventor: Hsien-Ken LIAO , Ming-Te TU , Jyong-Yue TIAN , Yao-Ting YEH
CPC classification number: H04R1/04 , B81B7/0061 , B81B2201/0257 , B81B2207/012 , H04R19/04 , H04R2201/003
Abstract: A microelectromechanical microphone package structure includes a substrate, sidewall, lid, sound wave transducer and processing module. The substrate has a plate, sound aperture penetrating the plate, and conduction portion disposed on the plate. The sidewall has one end disposed on the plate and has a conduction circuit electrically connected to the conduction portion. A chamber is defined between the lid, sidewall and plate. The lid has at least one solder pad and a third contact in electrical conduction with each other. The third contact is electrically connected to the conduction circuit. The sound wave transducer is disposed on the plate and in the chamber and aligned with the sound aperture. The processing module, which is disposed on the plate and in the chamber and electrically connected to the sound wave transducer and conduction portion, includes a processing chip and electronic component which are stacked and disposed on the plate.
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公开(公告)号:US20180050900A1
公开(公告)日:2018-02-22
申请号:US15676430
申请日:2017-08-14
Inventor: Stephen DUFFY , Colin Robert JENKINS , Tsjerk Hans HOEKSTRA
CPC classification number: B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81B2207/03 , B81C1/00666 , H04R7/06 , H04R19/005 , H04R19/04 , H04R2201/003
Abstract: The application describes a MEMS transducer comprising a layer of conductive material provided on a surface of a layer of membrane material. The layer of conductive material comprises first and second regions, wherein the thickness and/or the conductivity of the/each first and second regions is different.
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公开(公告)号:US20180035228A1
公开(公告)日:2018-02-01
申请号:US15660431
申请日:2017-07-26
Inventor: Euan James BOYD
CPC classification number: H04R31/006 , B81B3/0021 , B81B3/0072 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , H04R7/18 , H04R19/005 , H04R19/02 , H04R19/04 , H04R2201/003 , H04R2499/11
Abstract: The application describes MEMS transducers comprising a flexible membrane layer supported in a fixed relation relative to a substrate along at least one supporting edge, wherein a plurality of slits are provided through the membrane layer. The slits define a plurality of beams. Each beam defines a path between first and second endpoints of the beam, the path comprising at least one change in direction. Also described are transducers wherein the membrane layer is supported in a fixed relation relative to the substrate along a plurality of supporting edges which define a membrane region that is substantially bounded by the supporting edges.
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公开(公告)号:US20180027337A1
公开(公告)日:2018-01-25
申请号:US15246561
申请日:2016-08-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor: Chang-Sheng Hsu , Weng-Yi Chen , En-Chan Chen , Shih-Wei Li , Guo-Chih Wei
CPC classification number: H04R17/025 , B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C2201/013 , H04R1/06 , H04R7/04 , H04R7/20 , H04R17/02 , H04R19/005 , H04R31/003 , H04R31/006 , H04R2201/003
Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.
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