公开(公告)号：US20100050692A1

公开(公告)日：2010-03-04

申请号：US12480933

申请日：2009-06-09

Applicant: Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

Inventor： Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

IPC: C03C15/00

CPC classification number: C03C23/0025 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C15/00

Abstract: A method for laser patterning of a glass body, the method comprising the steps of: (i) providing a laser, said laser having an output beam at a laser wavelength λ; (ii) providing a glass body having optical density at of at least 1.5/cm at said wavelength; (iii) directing said laser output beam to (a) impinge on the glass body without ablating said glass, and (b) heat the glass body at a location proximate to said laser output beam so as to form a swell at this location; and (iv) etching this location.

Abstract translation: 一种用于玻璃体的激光图案化的方法，所述方法包括以下步骤：（i）提供激光，所述激光器具有激光波长λ的输出光束; （ii）提供在所述波长处具有至少1.5 / cm的光密度的玻璃体; （iii）将所述激光输出光束引向（a）撞击在玻璃体上，而不会烧蚀所述玻璃，和（b）在靠近所述激光输出光束的位置加热玻璃体，以在该位置形成隆起; 和（iv）蚀刻这个位置。

公开(公告)号：US20090011065A1

公开(公告)日：2009-01-08

申请号：US11659109

申请日：2006-05-23

Applicant: Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

Inventor： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC: B23K10/00 ,  B44C1/22

CPC classification number: C03B11/082 ,  B81C1/00531 ,  B81C2201/0143 ,  C03B11/084 ,  C03B2215/07 ,  C03B2215/412 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  G02B6/136 ,  Y02P40/57 ,  C04B41/0054 ,  C04B35/56

Abstract: A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.

Abstract translation: 通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US20040200818A1

公开(公告)日：2004-10-14

申请号：US10832375

申请日：2004-04-27

Inventor： Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

IPC: G03H001/16 ,  B23K026/00

CPC classification number: G11B7/125 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B29C33/3857 ,  B29C64/129 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C99/009 ,  B81C2201/0143 ,  G02B5/1857 ,  G03H2001/0478 ,  G11B7/261 ,  Y10S428/913 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/31623

Abstract: A method for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Abstract translation: 公开了一种用于处理具有微细三维形状和光滑表面的三维结构的方法，其中三维结构可用于光学装置。 该方法包括在平坦基底上沉积用于吸收激光的薄层; 在薄层上沉积透明层以吸收激光; 并照射通过透明层的工艺激光; 其中将工艺激光的脉冲注入能量设定为与能够在工艺激光的入射方向上的前面暴露薄层的表面的最大脉冲注入能量相同或更小，并设定 与能够沿着工艺激光的入射方向去除后方的透明层的最小脉冲注入能量相同或者更大。

公开(公告)号：US06632698B2

公开(公告)日：2003-10-14

申请号：US09924370

申请日：2001-08-07

Applicant: Thomas W. Ives

Inventor： Thomas W. Ives

IPC: H01L2100

CPC classification number: G01P15/08 ,  B81B3/007 ,  B81B2201/0235 ,  B81C2201/0143 ,  G01P2015/0817

Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

Abstract translation: 限定在MEMS的衬底内的微机电装置（MEMD）包括限定感兴趣区域的质量元件。 该装置还包括支撑梁，该支撑梁以与衬底隔开的关系支撑质量元件。 支撑梁包括由连接到基板的第一固定端和连接到质量元件的第一自由端限定的第一梁构件。 支撑梁还包括由连接到基板的第二固定端限定的第二梁构件和连接到质量元件的第二自由端。 梁构件彼此间隔开。 第一横向构件连接第一梁构件和第二梁构件。 优选地，支撑梁包括多个横向构件。 可以使用两个这样的支撑梁来支撑桥梁配置中的MEMD中的质量元件。

公开(公告)号：US06563079B1

公开(公告)日：2003-05-13

申请号：US09673874

申请日：2000-10-23

Applicant: Kazushige Umetsu ,  Jun Amako ,  Shinichi Yotsuya ,  Katsuji Arakawa

Inventor： Kazushige Umetsu ,  Jun Amako ,  Shinichi Yotsuya ,  Katsuji Arakawa

IPC: B23K2600

CPC classification number: B81C1/00087 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B23K26/384 ,  B41J2/16 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1645 ,  B81C2201/0143 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L2223/54453 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16146 ,  H01L2224/81

Abstract: A method for processing a work in which a processed hole with a high aspect ratio is formed by laser machining. Silicon oxide films (2) are formed as protective films on front and rear surfaces, respectively, of a silicon substrate (1). The silicon substrate (1) is irradiated with a laser light through the protective films (2) to thereby perform a perforating process. Alternatively, the silicon substrate (1) is irradiated with a circularly or randomly polarized laser light. Hence, a processed hole with a high aspect ratio can be obtained. Moreover, the processed hole can be shaped straightly, so that processing accuracy is improved.

Abstract translation: 一种通过激光加工形成具有高纵横比的加工孔的工件的处理方法。 氧化硅膜（2）分别在硅衬底（1）的前表面和后表面上形成为保护膜。 用激光照射硅衬底（1），通过保护膜（2）进行穿孔处理。 或者，用圆形或随机偏振的激光照射硅衬底（1）。 因此，可以获得具有高纵横比的加工孔。 此外，加工孔可以直线成型，从而提高加工精度。

公开(公告)号：US20020034879A1

公开(公告)日：2002-03-21

申请号：US09927428

申请日：2001-08-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。

公开(公告)号：US6086774A

公开(公告)日：2000-07-11

申请号：US993924

申请日：1997-12-18

Applicant: Francis Ho ,  Yoshihisa Yamamoto

Inventor： Francis Ho ,  Yoshihisa Yamamoto

IPC: B81C1/00 ,  C25F3/02 ,  G01P15/08 ,  G01P15/09 ,  G01P15/12 ,  G01Q70/16 ,  B44C1/22 ,  C25F3/12 ,  G01P15/02

CPC classification number: G01Q70/16 ,  B81C1/00531 ,  B82Y35/00 ,  G01P15/0802 ,  G01P15/0922 ,  G01P15/123 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C2201/0132 ,  B81C2201/0143 ,  G01P2015/0828

Abstract: A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.

Abstract translation: 通过使用至少两个方向蚀刻步骤来制造释放结构的方法。 悬臂，桥梁和许多其他结构可以用本发明制成。 在优选实施例中，以相对于基板表面非正常的角度执行两个定向蚀刻步骤，使得基底被切削并且结构被释放。 或者，可以以各种角度执行多于两个的定向蚀刻步骤。 例如，可以在定向蚀刻工艺期间连续旋转衬底。 通过本发明的方法形成的悬臂必须具有基本上三角形的横截面。 可以使用的定向蚀刻工艺包括聚焦离子束蚀刻和ECR等离子体蚀刻。 一些定向蚀刻工艺可能需要使用图案化的抗蚀剂层。 诸如聚焦离子束蚀刻的其它蚀刻工艺可以使用扫描技术来选择蚀刻哪些区域。 可以执行背面蚀刻以在释放的微加工结构下去除剩余的基底材料。 该方法特别适用于制备释放的悬臂。

公开(公告)号：US12057147B2

公开(公告)日：2024-08-06

申请号：US17511741

申请日：2021-10-27

Applicant: Seagate Technology LLC

Inventor： Tong Zhao ,  Li Wan ,  Michael Christopher Kautzky

IPC: G11B5/31 ,  B81C1/00 ,  B82B1/00 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/67 ,  B82Y10/00 ,  G11B5/00 ,  G11B11/24 ,  H01L21/3213

CPC classification number: G11B5/3163 ,  B81C1/00111 ,  B82B1/003 ,  G11B5/3133 ,  H01F10/30 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  B81C2201/0132 ,  B81C2201/0143 ,  B82Y10/00 ,  G11B2005/0021 ,  G11B11/24 ,  H01L21/32136

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2

公开(公告)号：US11939216B2

公开(公告)日：2024-03-26

申请号：US17188082

申请日：2021-03-01

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Stephan Helbig ,  Adolf Koller

IPC: B81C1/00 ,  G02B26/08 ,  G02B26/10

CPC classification number: B81C1/00904 ,  B81C1/00888 ,  G02B26/0833 ,  G02B26/105 ,  B81B2201/042 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0143

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

公开(公告)号：US11897763B2

公开(公告)日：2024-02-13

申请号：US17103796

申请日：2020-11-24

Applicant: STMICROELECTRONICS, INC.

Inventor： Jefferson Sismundo Talledo

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0108 ,  B81C2201/0143 ,  B81C2201/0146

Abstract: A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.