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    BOLOMETER TYPE TERAHERTZ WAVE DETECTOR
    61.
    发明申请
    BOLOMETER TYPE TERAHERTZ WAVE DETECTOR 有权
    BOLOMETER TYPE TERAHERTZ波检测器

    公开(公告)号：US20110303847A1

    公开(公告)日：2011-12-15

    申请号：US13151837

    申请日：2011-06-02

    Applicant: Seiji Kurashina ,  Naoki Oda

    Inventor： Seiji Kurashina ,  Naoki Oda

    IPC: H01L31/00

    CPC classification number: G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  H01L27/14669 ,  H01L31/085

    Abstract: A bolometer type Terahertz wave detector comprises: a temperature detecting portion having a thin bolometer film formed on a substrate, a reflective film that reflects Terahertz waves formed on the substrate at a position facing the temperature detecting portion, and an absorption film formed on the top surface of part of an eave-like member that extends to the inside from the perimeter edge section of the temperature detecting portion and that absorbs Terahertz waves. The reflective film and the absorption film form an optical resonant structure. A thermal isolation structure is formed by a support portion that supports the temperature detecting portion such that it is separated from the substrate by a gap. The eave-like member is supported by the support portion so that it is separated from the substrate by a gap.

    Abstract translation: 测辐射热计型太赫兹波检测器包括：温度检测部分，其具有形成在基板上的薄辐射热计膜;反射膜，其在面对温度检测部分的位置处反射在基板上形成的太赫兹波;以及吸收膜，形成在顶部 檐状构件的一部分的表面从温度检测部分的周边边缘部分延伸到内部并且吸收太赫兹波。 反射膜和吸收膜形成光学谐振结构。 热隔离结构由支撑温度检测部分的支撑部分形成，使得其通过间隙与基板分离。 檐状构件由支撑部支撑，使得其与基板间隔开。

    Pixel structure for microbolometer detector
    63.
    发明申请
    Pixel structure for microbolometer detector 有权
    微光度计检测器的像素结构

    公开(公告)号：US20110266444A1

    公开(公告)日：2011-11-03

    申请号：US12799627

    申请日：2010-04-28

    Applicant: Charles M. Hanson

    Inventor： Charles M. Hanson

    IPC: H01L31/0224 ,  H01L27/144 ,  H01L31/18 ,  H01L31/09

    CPC classification number: G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

    Abstract: Microbolometer pixel structures including membrane material in a current path between at least two spaced electrodes, the membrane material having multiple openings defined in the current path that are configured such that substantially the entire volume of electrically conductive membrane material in at least a portion of the current path contributes to conduction of current between the electrical contacts.

    Abstract translation: 微电子照度计像素结构，包括在至少两个间隔开的电极之间的电流通路中的膜材料，所述膜材料具有限定在电流路径中的多个开口，其被配置为使得在电流的至少一部分中基本上整个体积的导电膜材料 路径有助于电触点之间的电流传导。

    MULTILAYERED STRUCTURE
    64.
    发明申请
    MULTILAYERED STRUCTURE 有权
    多层结构

    公开(公告)号：US20110254653A1

    公开(公告)日：2011-10-20

    申请号：US13140938

    申请日：2009-12-18

    Applicant: Henry H. Radamson

    Inventor： Henry H. Radamson

    IPC: H01C7/13 ,  H01L21/02

    CPC classification number: H01L31/035254 ,  B82Y20/00 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  G01J5/20 ,  G01K7/22 ,  H01L31/028 ,  H01L31/0312 ,  Y02E10/547

    Abstract: A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-doped Si layer, and the thermistor is intended to provide a way to compensate for the strain in a multilayer IR-detector structure through carbon doping of the quantum layer and barrier layers.

    Abstract translation: 热敏电阻结构包括由多层结构中的阻挡层包围的至少一个量子层的多层结构。 量子层包括Ge并且可以是量子阱或量子点的形式。 阻挡层是碳掺杂的Si层，并且热敏电阻旨在提供通过量子层和阻挡层的碳掺杂来补偿多层IR检测器结构中的应变的方式。

    PYROELECTRIC DETECTOR AND METHOD FOR MANUFACTURING SAME, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT
    65.
    发明申请
    PYROELECTRIC DETECTOR AND METHOD FOR MANUFACTURING SAME, PYROELECTRIC DETECTION DEVICE, AND ELECTRONIC INSTRUMENT 有权
    微电子检测器及其制造方法，光电检测装置和电子仪器

    公开(公告)号：US20110233408A1

    公开(公告)日：2011-09-29

    申请号：US13069793

    申请日：2011-03-23

    Applicant: Takafumi NODA ,  Jun TAKIZAWA

    Inventor： Takafumi NODA ,  Jun TAKIZAWA

    IPC: G01J5/10 ,  H01L21/02 ,  H01L29/66

    CPC classification number: G01J5/048 ,  G01J5/02 ,  G01J5/024 ,  G01J5/34 ,  H01L37/02

    Abstract: A pyroelectric detector includes a pyroelectric detection element, a support member, a fixing part and a first reducing gas barrier layer. A first side of the support member faces a cavity and the pyroelectric detection element is mounted and supported on a second side opposite from the first side. An opening part communicated with the cavity is formed on a periphery of the support member in plan view from the second side of the support member. The fixing part supports the support member. The first reducing gas barrier layer covers a first surface of the support member on the first side, a side surface of the support member facing the opening part, and a part of a second surface of the support member on the second side and the pyroelectric detection element exposed as viewed from the second side of the support member.

    Abstract translation: 热电检测器包括热电检测元件，支撑元件，固定部分和第一还原气体阻挡层。 支撑构件的第一侧面向空腔，并且热电检测元件安装并支撑在与第一侧相对的第二侧上。 与支撑构件连通的开口部分从支撑构件的第二侧在平面图中形成在支撑构件的周边上。 固定部支撑支撑构件。 第一还原气体阻隔层覆盖第一侧上的支撑构件的第一表面，支撑构件的面向开口部的侧表面和第二侧上的支撑构件的第二表面的一部分，以及热电检测 元件从支撑构件的第二侧观察露出。

    THERMAL DETECTOR, THERMAL DETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL DETECTOR
    66.
    发明申请
    THERMAL DETECTOR, THERMAL DETECTOR DEVICE, ELECTRONIC INSTRUMENT, AND METHOD OF MANUFACTURING THERMAL DETECTOR 有权
    热探测器，热探测器装置，电子仪器和制造热探测器的方法

    公开(公告)号：US20110180713A1

    公开(公告)日：2011-07-28

    申请号：US13013124

    申请日：2011-01-25

    Applicant: Takafumi NODA

    Inventor： Takafumi NODA

    IPC: H01L27/14 ,  B23P11/00

    CPC classification number: G01J5/34 ,  G01J5/023 ,  G01J5/024 ,  G01J5/10 ,  G01J5/20 ,  H01L37/02 ,  Y10T29/49826

    Abstract: The thermal detector includes a support member supported on a substrate. The support member has a mounting portion supporting a thermal detector element, and at least one arm portion connected at one end to the mounting portion and connected at the other end to the substrate. At least one of the mounting portion and the at least one arm portion has a first member disposed towards the substrate, a transverse width of a transverse cross-sectional shape of the first member set to a first width; a second member disposed toward the thermal detector element and facing the first member, a transverse width of the second member set to the first width; and a third member linking the first member and the second member, a transverse width of the third member set to a second width that is smaller than the first width.

    Abstract translation: 热检测器包括支撑在基板上的支撑构件。 支撑构件具有支撑热检测器元件的安装部分，以及至少一个臂部分，其一端连接到安装部分并且在另一端连接到基板。 所述安装部分和所述至少一个臂部中的至少一个具有朝向所述基板设置的第一部件，所述第一部件的横截面形状的横向宽度设定为第一宽度; 朝向所述热检测器元件并面向所述第一构件的第二构件，所述第二构件的横向宽度设定为所述第一宽度; 以及连接所述第一构件和所述第二构件的第三构件，所述第三构件的横向宽度设定为小于所述第一宽度的第二宽度。

    Microbolometer with improved mechanical stability and method of manufacturing the same
    67.
    发明授权
    Microbolometer with improved mechanical stability and method of manufacturing the same 失效
    具有改善机械稳定性的微热辐射计及其制造方法

    公开(公告)号：US07884328B2

    公开(公告)日：2011-02-08

    申请号：US12181871

    申请日：2008-07-29

    Applicant: Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    Inventor： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC: H01L27/14

    CPC classification number: G01J5/20 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0118 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

    Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.

    Abstract translation: 本发明提供一种具有悬臂结构的微电热计及其制造方法，特别是具有三维悬臂结构的微电热计，其从传统的二维悬臂结构得到改进，及其制造方法。 该方法包括提供包括读出集成电路和用于形成吸收结构的反射层的衬底，在衬底上形成牺牲层，在牺牲层中形成具有不均匀横截面的悬臂结构，形成传感器部分 通过悬臂结构从衬底隔离，并去除牺牲层。

    Method and structures for etching cavity in silicon under dielectric membrane
    68.
    发明申请
    Method and structures for etching cavity in silicon under dielectric membrane 有权
    介电膜下硅蚀刻腔体的方法和结构

    公开(公告)号：US20100327393A1

    公开(公告)日：2010-12-30

    申请号：US12456910

    申请日：2009-06-24

    Applicant: Walter B. Meinel ,  Kalin V. Lazarov ,  Brian E. Goodlin

    Inventor： Walter B. Meinel ,  Kalin V. Lazarov ,  Brian E. Goodlin

    IPC: H01L29/66 ,  H01L21/306 ,  H01L23/00

    CPC classification number: G01J5/12 ,  B81B2201/0292 ,  B81C1/00047 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/024

    Abstract: A semiconductor device includes a semiconductor layer (2) and a dielectric stack (3) on the semiconductor layer. A plurality of etchant openings (24-1,2 . . . ) are formed through the dielectric stack (3) for passage of etchant for etching a plurality of overlapping sub-cavities (4-1,2 . . . ), respectively. The etchant is introduced through the etchant openings to etch a composite cavity (4) in the semiconductor layer by simultaneously etching the plurality of overlapping sub-cavities into the semiconductor layer.

    Abstract translation: 半导体器件包括在半导体层上的半导体层（2）和电介质叠层（3）。 多个蚀刻剂开口（24-1,2 ...）通过电介质叠层（3）形成，用于通过蚀刻剂，分别蚀刻多个重叠的子腔（4-1,2 ...）。 通过蚀刻剂开口引入蚀刻剂，以通过同时将多个重叠子腔同时蚀刻到半导体层中来蚀刻半导体层中的复合空腔（4）。

    Infrared-detecting element and infrared image sensor using the same
    69.
    发明授权
    Infrared-detecting element and infrared image sensor using the same 失效
    红外线检测元件和红外线图像传感器

    公开(公告)号：US07847252B2

    公开(公告)日：2010-12-07

    申请号：US12207744

    申请日：2008-09-10

    Applicant: Takashi Kawakubo ,  Michihiko Nishigaki ,  Toshihiko Nagano ,  Yoshinori Iida ,  Ikuo Fujiwara ,  Hiroto Honda

    Inventor： Takashi Kawakubo ,  Michihiko Nishigaki ,  Toshihiko Nagano ,  Yoshinori Iida ,  Ikuo Fujiwara ,  Hiroto Honda

    IPC: H01L27/14

    CPC classification number: G01J5/40 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/34 ,  H01L37/00

    Abstract: An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.

    Abstract translation: 红外线检测元件包括：基板; 层压体; 将所述层叠体的一部分与所述基板连接的支撑体，并且在所述基板的上方具有间隙地支撑所述层叠体; 以及设置在所述基板上并连接到所述下电极和所述上电极中的至少一个的放大器。 层叠体具有下电极，上电极和由氮化铝制成的压电膜，该氮化铝设置在下电极和上电极之间，并且其中c轴几乎垂直于膜平面取向。 放大器具有根据层叠体中产生的电荷而进行电压转换的电路。

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