Abstract:
An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
Abstract:
According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.
Abstract:
A geometrically shaped photonic crystal structure consisting of alternating layers of thin films is heated to emit light. The structure may include index matching layers or a cavity layer to enhance emissions. The layer thicknesses of the structure may be spatially varied to modify the emission spectrum versus emission angle. The self-focusing structure may be fabricated into a convex electrically heated wire filament light bulb, a concave visible thermophotovoltaic emitter, a concentric directional heat exchanger, an electronic display, or a variety of irregularly shaped remotely read temperature or strain sensors.
Abstract:
Electromagnetic radiation detecting and sensing systems using carbon nanotube fabrics and methods of making the same are provided. In certain embodiments of the invention, an electromagnetic radiation detector includes a substrate, a nanotube fabric disposed on the substrate, the nanotube fabric comprising a non-woven network of nanotubes, and first and second conductive terminals, each in electrical communication with the nanotube fabric, the first and second conductive terminals disposed in space relation to one another. Nanotube fabrics may be tuned to be sensitive to a predetermined range of electromagnetic radiation such that exposure to the electromagnetic radiation induces a change in impedance between the first and second conductive terminals. The detectors include microbolometers, themistors and resistive thermal sensors, each constructed with nanotube fabric. Nanotube fabric detector arrays may be formed for broad-range electromagnetic radiation detecting. Methods for making nanotube fabric detectors, arrays, microbolometers, thermistors and resistive thermal sensors are each described.
Abstract:
In an infrared sensor 1 including a condenser lens 3 and a multi-element light-receiving unit 2 with a plurality of light-receiving elements 2a to 2h aligned therein on a straight line, a position of receiving an intensity distribution peak of infrared rays which have passed through the condenser lens 3 is deviated from the center position of the multi-element light-receiving unit 2 to a desired light-receiving element position. Especially when the infrared sensor 1 is included in an air conditioner, the position of receiving the intensity distribution peak of the infrared rays is set to the position of a light-receiving element used for detecting heat in a location far from the installment position of the air conditioner.
Abstract:
A thermal-type infrared solid-state imaging device comprises a infrared detector having at least a substrate provided with an integrated circuit for reading out a signal, a diaphragm for detecting a temperature change by absorbing infrared rays, and a support section for supporting the diaphragm above a surface of one side of the substrate with space in between, and includes an eaves section connected to a connection area provided in the vicinity of outer circumference of the diaphragm and covering at least components other than the diaphragm across a space and transmitting the heat generated by absorbing incident infrared rays to the diaphragm, wherein the eaves section has the thickness of a first region covering the components other than the diaphragm across a space thicker than the thicknesses of a second region contacting the connection area of the diaphragm and a third region rising upward in mid air from the diaphragm.
Abstract:
Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.
Abstract:
A pyroelectric detector includes a pyroelectric detection element, a support member and a support part. The pyroelectric detection element has a capacitor including a first electrode, a second electrode, and a pyroelectric body. The support member includes first and second sides with the pyroelectric detection element being mounted on the first side and the second side facing a cavity. The support part, the support member, and the pyroelectric detection element are laminated in this order in a first direction with the cavity being formed between the support part and the support member. The support member has at least a first insulation layer on the first side contacting the first electrode, with the first insulation layer having a hydrogen content rate smaller than a hydrogen content rate of a second insulation layer positioned further in a second direction than the first insulation layer, the second direction being opposite the first direction.
Abstract:
There are provided an IR receiver and liquid crystal shutter glasses with the same, and more particularly, an IR receiver and liquid crystal shutter glasses having the same to solve the problem in that a pair of the crystal liquid shutter glasses malfunctions by infrared generated from the surrounding environment, such as a halogen light.The liquid crystal shutter glasses comprises: an IR receiver including an IR sensor to receive an IR signal transmitted from a display device; two lenses of a right eye lens and a left eye lens having their respective liquid crystal shutters; and a liquid crystal driving unit to open and close the liquid crystal shutters of the two lenses, wherein the IR receiver comprises: an IR lens unit being convex toward the IR sensor; and an IR absorber to absorb the IR entering at a predetermined height/angle or more, among the incidence of the IR toward the IR sensor.
Abstract:
An infrared light detector has a first substrate having a sensor chip thereon that has an exposure surface that can be irradiated with infrared light, the sensor chip converting the incident infrared light into an electrical signal. The infrared light detector also has a second substrate having a window therein that is located adjacent to the exposure surface of the sensor chip, the window masking infrared light of a predetermined wavelength. The size (dimensions) of the window and the distance of the window with respect to the exposure surface are dimensioned to cause infrared light passing through the window to completely strike the exposure area of the sensor chip.