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    Charged Particle Inspection Method and Charged Particle System
    61.
    发明申请
    Charged Particle Inspection Method and Charged Particle System 审中-公开
    带电粒子检测方法和带电粒子系统

    公开(公告)号：US20090256075A1

    公开(公告)日：2009-10-15

    申请号：US11991547

    申请日：2006-09-06

    Applicant: Thomas Kemen ,  Rainer Knippelmeyer ,  Stefan Schubert

    Inventor： Thomas Kemen ,  Rainer Knippelmeyer ,  Stefan Schubert

    IPC: G01N23/00 ,  G01K1/08

    CPC classification number: H01J37/04 ,  H01J37/045 ,  H01J37/09 ,  H01J37/145 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/04922 ,  H01J2237/04924 ,  H01J2237/04926 ,  H01J2237/15 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/2561 ,  H01J2237/2817 ,  H01J2237/31774

    Abstract: The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets.

    Abstract translation: 带电粒子系统本发明涉及一种带电粒子系统，包括：带电粒子源; 第一个多孔板; 设置在所述第一多孔板的下游的第二多孔板，所述第二多孔板; 控制器，被配置为选择性地施加所述第一和第二多孔板之间的至少第一和第二电压差; 其中所述带电粒子源和所述第一和第二多孔径孔布置成使得多个带电粒子子束中的每一个穿过孔径对，所述孔径对包括所述第一多孔板的一个孔和所述第二多孔的一个孔 板，其中多个孔径对布置成使得当穿过穿过第一多孔板的孔的带电粒子束的入射方向从第一多孔板的孔的中心相对于中心位移时，第一多孔板的孔的中心 的第二多孔板的孔径。 本发明还涉及一种构造成改变一组带电粒子子束的发散度的粒子光学部件，以及包括使用不同数目的带电粒子子束对物体进行检查的带电粒子检查方法。

    Charged particle beam writing method and apparatus
    62.
    发明授权
    Charged particle beam writing method and apparatus 有权
    带电粒子束写入方法和装置

    公开(公告)号：US07601968B2

    公开(公告)日：2009-10-13

    申请号：US11563109

    申请日：2006-11-24

    Applicant: Takayuki Abe ,  Jun Yashima

    Inventor： Takayuki Abe ,  Jun Yashima

    IPC: G21K1/087

    CPC classification number: H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  H01J37/045 ,  H01J37/24 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0432 ,  H01J2237/1504 ,  H01J2237/30472

    Abstract: A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.

    Abstract translation: 带电粒子束写入方法包括照射带电粒子束的镜头，并且使用布置在带电粒子束的光路上的多个偏转器偏转拍摄的带电粒子束以将目标物体写入图案，其中 所述多个偏转器中的任何一个控制在相同的周期内不同于由另一偏转器偏转控制的镜头的镜头的带电粒子束的偏转。

    Beam stop and beam tuning methods
    63.
    发明授权
    Beam stop and beam tuning methods 有权
    光束停止和光束调谐方法

    公开(公告)号：US07579604B2

    公开(公告)日：2009-08-25

    申请号：US11445722

    申请日：2006-06-02

    Applicant: John W. Vanderpot ,  Yongzhang Huang

    Inventor： John W. Vanderpot ,  Yongzhang Huang

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

    Abstract translation: 提供了用于减轻与离子注入相关的污染的系统，方法和装置。 提供了一种位于离子源和终端之间的离子源，终端站和质量分析器，其中离子源由离子源形成，并且基于位置，选择性地通过质量分析器传送到终端站 光束挡块组件。 光束停止组件选择性地防止离子束进入和/或离开质量分析器，其中最小化在诸如离子注入系统的启动的过渡期间与不稳定离子源相关联的污染。

    PATTERN DEFINITION DEVICE HAVING DISTINCT COUNTER-ELECTRODE ARRAY PLATE
    67.
    发明申请
    PATTERN DEFINITION DEVICE HAVING DISTINCT COUNTER-ELECTRODE ARRAY PLATE 有权
    具有隔离计数器电极阵列的图案定义装置

    公开(公告)号：US20080283767A1

    公开(公告)日：2008-11-20

    申请号：US12120130

    申请日：2008-05-13

    Applicant: Elmar Platzgummer

    Inventor： Elmar Platzgummer

    IPC: H01J3/14

    CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1472 ,  H01J37/3177 ,  H01J2237/0437

    Abstract: A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array has a plurality of electrostatic deflector electrodes for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes are electrically connected to a counter potential independently of the deflection array through a counter-electrode array. The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode, each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.

    Abstract translation: 一种用于粒子束处理或检查装置的多光束图案定义装置，其被设置为被一束带电粒子照射，并允许光束通过多个孔，从而形成子束， 成像到目标上。 偏转阵列具有用于每个子束的多个静电偏转器电极。 每个偏转器电极可以分别施加静电电位。 反电极通过对电极阵列独立于偏转阵列电连接到反电位。 为了提高系统的可靠性，反电势可能是共同的潜力或个别的潜力。 结合相关的对电极，当向相应的对电极施加激活电压时，每个偏转器电极充分偏转其子束以使子束偏离其标称路径。

    ION IMPLANTATION APPARATUS
    68.
    发明申请
    ION IMPLANTATION APPARATUS 有权
    离子植入装置

    公开(公告)号：US20080251737A1

    公开(公告)日：2008-10-16

    申请号：US12100973

    申请日：2008-04-10

    Applicant: Mitsukuni TSUKIHARA ,  Yoshito Fujii

    Inventor： Mitsukuni TSUKIHARA ,  Yoshito Fujii

    IPC: G21K5/04

    CPC classification number: H01J37/3171 ,  H01J37/045 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/0213 ,  H01J2237/151 ,  H01J2237/24405 ,  H01J2237/30455 ,  H01J2237/31703

    Abstract: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.

    Abstract translation: 在光束扫描仪入射之前的光束线布置有喷射器标记法拉第杯，其通过测量离子束的总光束量来检测束流，从而能够将其输入和输出。 当通过将注射器标记法拉第杯放置在梁轨迹线上来关闭离子束时，离子束撞击在注射器标记法拉第杯处提供的石墨上。 在这种情况下，即使当石墨被离子束溅射时，由于注射器标志法拉第杯布置在射束扫描器的上游侧，并且离子束被注射器标记法拉第杯切断，溅射的石墨颗粒 不要附着在注射器标志法拉第杯的周边部件上。

    ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD
    69.
    发明申请
    ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD 有权
    离子植入装置和离子植入方法

    公开(公告)号：US20080251713A1

    公开(公告)日：2008-10-16

    申请号：US12100666

    申请日：2008-04-10

    Applicant: Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

    Inventor： Mitsukuni Tsukihara ,  Takanori Yagita ,  Hiroshi Sogabe ,  Toshio Yumiyama ,  Mitsuaki Kabasawa

    IPC: B01D59/44 ,  G21K5/10

    CPC classification number: H01J37/3171 ,  H01J37/045 ,  H01J37/304 ,  H01J2237/0213 ,  H01J2237/151 ,  H01J2237/30455 ,  H01J2237/31703

    Abstract: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.

    Abstract translation: 根据本发明的离子注入装置包括作为偏转装置的驻极电极，其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处，用于将预定的离子束偏转 通过电场的操作从光束轨迹线偏离的方向。 当离子束不满足期望条件时，停放电压被施加到驻极电极，由此，离子束通过从光束轨迹线偏转而处于抽真空状态。 结果，离子束不能通过质量分析狭缝，因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

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