公开(公告)号：US20070085166A1

公开(公告)日：2007-04-19

申请号：US11582954

申请日：2006-10-19

Applicant: Jin Moon ,  Seung Lee ,  Hyung Jung ,  Yul Chung ,  Seung Sohn

Inventor： Jin Moon ,  Seung Lee ,  Hyung Jung ,  Yul Chung ,  Seung Sohn

IPC: H01L29/00

CPC classification number: H05K1/162 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179

Abstract: The invention provides a PCB with a thin film capacitor embedded therein and a method for manufacturing the same. The PCB includes a lower electrode formed on an insulating substrate; an amorphous paraelectric film formed on the lower electrode via low temperature film formation; a buffer layer formed on the amorphous paraelectric film; a metal seed layer formed on the buffer layer; and an upper electrode formed on the metal seed layer.

Abstract translation: 本发明提供一种其中嵌有薄膜电容器的PCB及其制造方法。 PCB包括形成在绝缘基板上的下电极; 通过低温成膜形成在下电极上的非晶顺电膜; 形成在所述非晶正电介质膜上的缓冲层; 形成在缓冲层上的金属种子层; 以及形成在金属籽晶层上的上电极。

公开(公告)号：US20070081297A1

公开(公告)日：2007-04-12

申请号：US11541676

申请日：2006-10-03

Applicant: Min Ko ,  Yul Chung ,  Eun Park

Inventor： Min Ko ,  Yul Chung ,  Eun Park

IPC: H01G4/06

CPC classification number: H01G4/1218 ,  H01G4/1245 ,  H01G4/33 ,  H05K1/09 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2203/0353 ,  H05K2203/0369

Abstract: A method of manufacturing a thin film capacitor includes steps of: performing recrystallization heat treatment on a metal foil; forming a dielectric layer on a top surface of the recrystallized metal foil; heat treating the metal foil and the dielectric layer; and forming an upper electrode on a top surface of the heat-treated dielectric layer. The recrystallization heat treatment prevents the oxidation of a metal foil, by which a dielectric layer can be heat treated at a high temperature, thereby improving electric properties of a thin film capacitor and the reliability of a product.

Abstract translation: 制造薄膜电容器的方法包括以下步骤：对金属箔进行再结晶热处理; 在再结晶金属箔的顶表面上形成电介质层; 对金属箔和电介质层进行热处理; 以及在所述经热处理的介电层的顶表面上形成上电极。 再结晶热处理防止金属箔的氧化，通过该金属箔可以在高温下对介电层进行热处理，从而提高薄膜电容器的电性能和产品的可靠性。

公开(公告)号：US20070035930A1

公开(公告)日：2007-02-15

申请号：US11201771

申请日：2005-08-10

Applicant: Chien-Min Sung ,  Ming-Chi Kan ,  Shao Hu

Inventor： Chien-Min Sung ,  Ming-Chi Kan ,  Shao Hu

IPC: H05K7/20

CPC classification number: H05K1/0209 ,  H01L33/641 ,  H05K3/28 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0323

Abstract: Methods and devices for cooling printed circuit boards having at least one heat source are disclosed and described. The method can include coating a layer of diamond-like carbon (DLC) over at least a portion of the printed circuit board in order to accelerate movement of heat away from the heat source. Various heat sources may be present on a printed circuit board. In one aspect, the heat source can be an active heat source such as a heat-generating electronic component.

Abstract translation: 公开并描述了用于冷却具有至少一个热源的印刷电路板的方法和装置。 该方法可以包括在印刷电路板的至少一部分上涂覆类金刚石碳（DLC）层，以加速远离热源的热运动。 各种热源可能存在于印刷电路板上。 一方面，热源可以是诸如发热电子部件的活性热源。

公开(公告)号：US20070004165A1

公开(公告)日：2007-01-04

申请号：US11319820

申请日：2005-12-28

Applicant: Hyo Shin ,  Soon Yoon ,  Eun Park ,  Soo Lyoo

Inventor： Hyo Shin ,  Soon Yoon ,  Eun Park ,  Soo Lyoo

IPC: H01L21/20

CPC classification number: H05K1/162 ,  H01G4/10 ,  H05K2201/0175 ,  H05K2201/0179

Abstract: The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a first metal electrode layer formed on a polymer-based composite substrate, a dielectric layer, formed on the first metal electrode layer, and made of BiZnNb-based metal oxide with a dielectric constant of at least 15, and a second metal electrode layer formed on the dielectric layer. The BiZnNb-based amorphous metal oxide in this invention has a high dielectric constant without a thermal treatment for crystallization, useful for fabrication of a thin layer capacitor of a polymer-based layered structure such as a PCB.

Abstract translation: 本发明涉及包括第一和第二金属电极层的薄层电容器和插入在金属层之间介电常数至少为15的BiZnNb基非晶态金属氧化物的电介质层和具有该介电层的层状结构。 层状结构包括形成在第一金属电极层上的由聚合物系复合基板形成的第一金属电极层，介电层，介电常数为15以上的BiZnNb系金属氧化物，第二金属电极层 形成在电介质层上的金属电极层。 本发明中的BiZnNb系非晶态金属氧化物具有高介电常数，而不需要进行结晶热处理，可用于制造基于聚合物的层状结构如PCB的薄层电容器。

公开(公告)号：US07153775B2

公开(公告)日：2006-12-26

申请号：US11215465

申请日：2005-08-30

Applicant: Joseph E. Geusic ,  Alan R. Reinberg

Inventor： Joseph E. Geusic ,  Alan R. Reinberg

IPC: H01L21/44

CPC classification number: H01L21/76852 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L21/76888 ,  H05K3/02 ,  H05K3/105 ,  H05K3/108 ,  H05K2201/0175 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K2203/1157

Abstract: A patterning method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of first material (e.g., copper) while one or more portions of the second material (e.g., copper oxide) remain. One or more portions of the remaining second material (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer may be used for certain applications.

公开(公告)号：US20060269762A1

公开(公告)日：2006-11-30

申请号：US11363334

申请日：2006-02-27

Applicant: Markondeya Pulugurtha ,  Devarajan Balaraman ,  Rao Tummala ,  Isaac Abothu

Inventor： Markondeya Pulugurtha ,  Devarajan Balaraman ,  Rao Tummala ,  Isaac Abothu

IPC: B32B15/04

CPC classification number: H05K1/162 ,  H01G4/10 ,  H01G4/33 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0355 ,  H05K2201/09763 ,  H05K2203/121 ,  Y10T428/31678

Abstract: Disclosed are organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates. Hydrothermal synthesis allows direct deposition of high-k films with capacitance density of about 1 μF/cm2 on organic substrates. This is done by reactively growing a high-k film from Ti foil/Ti-coated copper foil/Ti precursor-coated organic substrate in an alkaline barium ion bath. Alternatives may be used to address multiple coatings, low temperature baking, low temperature pyrolysis with oxygen plasma, etc. Sol-gel and RF-sputtering assisted by a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm2. Thermal oxidation of titanium foil/Ti-coated copper foil/Ti-coated organic substrate with a copper conductive layer is also a reactively grown high-k film process for integrating capacitance of hundreds of nF with or without using a foil transfer process.

Abstract translation: 公开了具有用于将电容器嵌入衬底中的反应性（例如Ti）层的有机相容薄膜处理技术。 水热合成允许在有机衬底上直接沉积具有约1μF/ cm 2的电容密度的高k膜。 这是通过在碱性钡离子浴中从Ti箔/ Ti涂覆的铜箔/ Ti前体涂覆的有机衬底上反应生长高k膜而完成的。 替代品可用于处理多层涂料，低温烘烤，氧等离子体的低温热解等。通过与中间层反应和箔转移工艺进行辅助的溶胶 - 凝胶和RF溅射可用于整合钙钛矿薄膜 电容量在1-5μF/ cm 2之间。 具有铜导电层的钛箔/ Ti涂覆的铜箔/ Ti涂覆的有机衬底的热氧化也是用于利用或不使用箔转移工艺来集成数百nF的电容的反应生长的高k膜工艺。

公开(公告)号：US07138068B2

公开(公告)日：2006-11-21

申请号：US11084938

申请日：2005-03-21

Applicant: Gregory J. Dunn ,  Robert T. Croswell ,  Jaroslaw A. Magera ,  Jovica Savic ,  Aroon V. Tungare

Inventor： Gregory J. Dunn ,  Robert T. Croswell ,  Jaroslaw A. Magera ,  Jovica Savic ,  Aroon V. Tungare

IPC: H01L21/302

CPC classification number: C23F1/40 ,  C23F1/02 ,  C23F1/32 ,  C23F1/34 ,  H05K1/162 ,  H05K3/0044 ,  H05K3/025 ,  H05K3/06 ,  H05K3/429 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/09309 ,  H05K2201/09509 ,  H05K2203/025 ,  H05K2203/0746

Abstract: A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.

公开(公告)号：US07110241B2

公开(公告)日：2006-09-19

申请号：US10902157

申请日：2004-07-30

Applicant: Akira Yamada ,  Ayumi Nozaki ,  Shu Yamashita

Inventor： Akira Yamada ,  Ayumi Nozaki ,  Shu Yamashita

IPC: H01G4/32

CPC classification number: H01L23/13 ,  H01L23/498 ,  H01L23/49822 ,  H01L23/538 ,  H01L23/5383 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K1/113 ,  H05K3/246 ,  H05K3/4061 ,  H05K2201/0175 ,  H05K2201/0347 ,  H05K2201/09045 ,  H05K2201/09436 ,  H05K2203/0594 ,  Y10T428/24926 ,  H01L2924/00

Abstract: A substrate has a base, an intermediate layer, a conductive layer, and conductive films. The base is a ceramic insulator. The intermediate layer is on a main surface of the base. The conductive layer is on the intermediate layer. The conductive films are on the conductive layer, covering an exposed portion of the conductive layer.

Abstract translation: 衬底具有基底，中间层，导电层和导电膜。 基座是陶瓷绝缘体。 中间层位于基体的主表面上。 导电层位于中间层上。 导电膜位于导电层上，覆盖导电层的暴露部分。

公开(公告)号：US20060022304A1

公开(公告)日：2006-02-02

申请号：US11191486

申请日：2005-07-28

Applicant: Maria Rzeznik

Inventor： Maria Rzeznik

IPC: H01L29/00 ,  H01L21/20

CPC classification number: H01G4/08 ,  H01G4/12 ,  H01G4/20 ,  H01L21/3115 ,  H01L28/82 ,  H05K1/162 ,  H05K3/181 ,  H05K2201/0175 ,  H05K2201/0195 ,  H05K2201/0209 ,  H05K2201/09509

Abstract: Dielectric structures particularly suitable for use in capacitors having a layer of a dielectric material including a dopant that provides a positive topography are disclosed. Methods of forming such dielectric structures are also disclosed. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract translation: 公开了特别适用于具有包括提供正形貌的掺杂剂的介电材料层的电容器中的电介质结构。 还公开了形成这种电介质结构的方法。 这种介电结构显示随后施加的导电层的附着力增加。

公开(公告)号：US06974547B1

公开(公告)日：2005-12-13

申请号：US09711234

申请日：2000-11-13

Applicant: Naoki Kohara ,  Taisuke Sawada ,  Masatoshi Kitagawa

Inventor： Naoki Kohara ,  Taisuke Sawada ,  Masatoshi Kitagawa

IPC: H01G4/30 ,  H01G4/08 ,  H05K1/00 ,  H05K1/16 ,  H05K3/38 ,  H01L21/302 ,  C23F1/00

CPC classification number: H05K1/162 ,  H01G4/08 ,  H05K1/0393 ,  H05K3/388 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/09763

Abstract: According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.

Abstract translation: 根据本发明的柔性薄膜电容器，在由选自有机聚合物和金属箔中的至少一种构成的基板上形成粘合膜，并且无机高介电膜和金属电极膜是 形成在其上。 可以使用金属氧化物粘合膜作为粘合膜。 该粘合膜形成为与无机高介电膜和至少一个金属电极膜接触。