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    Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
    73.
    发明授权
    Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权
    在半导体基板上具有单片集成多传感器装置的手机及其方法

    公开(公告)号：US09580302B2

    公开(公告)日：2017-02-28

    申请号：US14207433

    申请日：2014-03-12

    Applicant: Versana Micro Inc.

    Inventor： Bishnu Prasanna Gogoi

    IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    SYSTEMS AND METHODS FOR A TIME-BASED OPTICAL PICKOFF FOR MEMS SENSORS
    74.
    发明申请
    SYSTEMS AND METHODS FOR A TIME-BASED OPTICAL PICKOFF FOR MEMS SENSORS 有权
    用于MEMS传感器的基于时间的光学PICKOFF的系统和方法

    公开(公告)号：US20160377434A1

    公开(公告)日：2016-12-29

    申请号：US14860443

    申请日：2015-09-21

    Applicant: Honeywell International Inc.

    Inventor： Robert D. Horning ,  Grant Lodden

    IPC: G01C19/5726 ,  G01C19/574 ,  G01P15/03 ,  G02B6/293

    CPC classification number: G01C19/5726 ,  B81B2201/0228 ,  B81B2201/04 ,  B81B2203/053 ,  G01C19/5621 ,  G01C19/5656 ,  G01C19/574 ,  G01C25/00 ,  G01P15/032 ,  G01P15/093 ,  G01P21/00 ,  G01P2015/0822 ,  G02B6/29331

    Abstract: Systems and methods for a time-based optical pickoff for MEMS sensors are provided. In one embodiment, a method for an integrated waveguide time-based optical-pickoff sensor comprises: launching a light beam generated by a light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting changes in an area of overlap between the coupling port and a moving sensor component separated from the coupling port by a gap by measuring an attenuation of the light beam at the optical output port, wherein the moving sensor component is moving in-plane with respect a surface of the first substrate comprising the coupling port and the coupling port is positioned to detect movement of an edge of the moving sensor component.

    Abstract translation: 提供了用于MEMS传感器的基于时间的光学拾取的系统和方法。 在一个实施例中，一种用于集成波导时基的光学传感器传感器的方法包括：将由光源产生的光束发射到在第一衬底内单片制造的集成波导光学检测器，所述集成波导光学检测器包括 光输入端口，耦合端口和光输出端口; 并且通过测量光输出端口处的光束的衰减来检测耦合端口和与耦合端口分离的移动传感器部件之间的重叠区域的变化，其中移动传感器部件正在与平面内移动， 相对于包括耦合端口的第一基板的表面和耦合端口被定位成检测移动的传感器部件的边缘的移动。

    CMOS-MEMS-CMOS PLATFORM
    75.
    发明申请
    CMOS-MEMS-CMOS PLATFORM 有权
    CMOS-MEMS-CMOS平台

    公开(公告)号：US20160362293A1

    公开(公告)日：2016-12-15

    申请号：US14738745

    申请日：2015-06-12

    Applicant: InvenSense, Inc.

    Inventor： Peter SMEYS ,  Martin LIM

    IPC: B81B7/00

    CPC classification number: B81B7/007 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00238 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.

    Abstract translation: 公开了一种传感器芯片，其组合包括至少一个CMOS电路，MEMS基板和包括垂直堆叠的一个封装中的至少一个CMOS电路的另一基板的基板。 所述封装包括传感器芯片，还包括具有第一表面的第一基板和包括至少一个CMOS电路的第二表面; 具有第一表面和第二表面的MEMS衬底; 以及包括至少一个CMOS电路的第二衬底。 其中第一衬底的第一表面附接到封装衬底，并且第一衬底的第二表面附接到MEMS衬底的第一表面。 MEMS基板的第二表面附接到第二基板。 第一基板，MEMS基板，第二基板和封装基板机械地连接并设置有电连接。

    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    76.
    发明申请
    MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 审中-公开
    半导体基板上的单片集成多传感器器件及其方法

    公开(公告)号：US20160167953A1

    公开(公告)日：2016-06-16

    申请号：US15049339

    申请日：2016-02-22

    Applicant: Versana Micro Inc

    Inventor： BISHNU PRASANNA GOGOI

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

    Abstract translation: 公开了一种单片集成多传感器（MIMS）。 MIM集成电路包括多个传感器。 例如，集成电路可以包括三个或更多个传感器，其中每个传感器测量不同的参数。 三个或更多个传感器可以共享一个或多个层以形成每个传感器结构。 在一个实施例中，三个或更多个传感器可以包括MEM传感器结构。 可以形成在MIM集成电路上的传感器的示例是惯性传感器，压力传感器，触觉传感器，湿度传感器，温度传感器，麦克风，力传感器，负载传感器，磁传感器， 流量传感器，光传感器，电场传感器，电阻抗传感器，电偶皮响应传感器，化学传感器，气体传感器，液体传感器，固体传感器和生物传感器。

    Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
    77.
    发明授权
    Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权
    半导体衬底上的单片集成多传感器器件及其方法

    公开(公告)号：US09266717B2

    公开(公告)日：2016-02-23

    申请号：US14207419

    申请日：2014-03-12

    Applicant: Versana Micro Inc.

    Inventor： Bishnu Prasanna Gogoi

    IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.

    Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。

    CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE
    80.
    发明申请
    CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE 有权
    CMOS-MEMS集成器件，其中包括在不同的控制压力下的多个CAVIITY和制造方法

    公开(公告)号：US20150129991A1

    公开(公告)日：2015-05-14

    申请号：US14603185

    申请日：2015-01-22

    Applicant: InvenSense, Inc.

    Inventor： Daesung LEE ,  Jongwoo SHIN ,  Jong Il SHIN ,  Peter SMEYS ,  Martin LIM

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/0023 ,  B81B7/0038 ,  B81B7/0041 ,  B81B7/02 ,  B81B2201/0228 ,  B81B2207/017 ,  B81C1/00285 ,  B81C2203/019 ,  B81C2203/035 ,  B81C2203/0785

    Abstract: An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

    Abstract translation: 集成MEMS器件包括两个基板，其中第一和第二基板耦合在一起并且其间具有两个外壳。 第一和第二基板之一包括除气源层和去气阻挡层，以调节两个外壳内的压力。 该方法包括在基板上沉积和图案化除气源层和第一除气阻挡层，产生两个横截面。 在两个横截面之一中，除气源层的顶表面不被除气阻挡层覆盖，而在两个横截面中的另一个中，除气源层被封装在除气阻挡层中。 该方法还包括平行地沉积第二除气阻挡层并蚀刻第二除气阻挡层，使得第二除气阻挡层的间隔物留在除气源层的侧壁上。

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