Abstract:
A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.
Abstract:
A manufacturing method of an inertial sensor which includes a movable body that is disposed in a cavity formed by a base body and a lid, and in which a wiring groove of wiring communicating with the cavity and electrically connected to the movable body is formed in the base body, includes forming a first opening section, which does not penetrate through the lid by wet etching; accommodating the movable body in the cavity by bonding the base body and the lid; forming a first sealing material with which the wiring groove is sealed after the accommodating of the movable body; forming a through-hole communicating with the cavity by penetrating through the first opening section by dry etching after the forming of the first sealing material; and forming a second sealing material with which the through-hole is sealed.
Abstract:
An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.
Abstract:
The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.
Abstract:
A micro-electro-mechanical sensing device including a substrate, a semiconductor layer, a supporting pillar, a first suspended arm, a connecting member, a second suspended arm, and a proof mass is provided. The semiconductor layer is disposed on or above the substrate. The supporting pillar is disposed on or above the semiconductor layer. The first suspended arm is disposed on the supporting pillar. The supporting connects a portion of the first suspended arm. The connecting member directly or indirectly connects another portion of the first suspended arm. The second suspended arm has a first surface and a second surface opposite to the first surface. The connecting member connects a portion of the first surface. The proof mass connects the second suspended arm and it includes a portion of the second suspended arm as a portion of the proof mass. A method for manufacturing the device is also provided.
Abstract:
A micro-electro mechanical apparatus having a PN-junction is provided. The micro-electro mechanical apparatus includes a movable mass, a conductive layer, and an electrode. The movable mass includes a P-type semiconductor layer and an N-type semiconductor layer. The PN-junction is formed between the P-type semiconductor layer and the N-type semiconductor layer. The micro-electro mechanical apparatus is capable of eliminating abnormal voltage signal when an alternating current passes through the conductive layer. The micro-electro mechanical apparatus is adapted to measure acceleration and magnetic field. The micro-electro mechanical apparatus can be other types of micro-electro mechanical apparatus such as micro-electro mechanical scanning micro-mirror.
Abstract:
A micromechanical component including a mass structure which may be deflected with respect to a substrate with the aid of at least one spiral spring in a direction of deflection. The spiral spring includes at least one folding section, which is formed by two spring legs which are situated essentially in parallel to each other and are connected to each other with the aid of a connecting bar. A damping device for oscillating movements of the folding section in the direction of deflection is provided in the area of the connecting bar.
Abstract:
A micromechanical component includes: a substrate; a seismic weight joined to the substrate at a first suspension mount; at least one first electrode for measuring a motion of the seismic weight in a first direction, the first electrode being joined to the substrate at a second suspension mount; and at least one second electrode for measuring a motion of the seismic weight in a second direction different from the first direction, the second electrode being joined to the substrate at a third suspension mount. The first electrode is mechanically connected to the second suspension mount with the aid of a support arm and set apart from the second suspension mount.
Abstract:
A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.
Abstract:
Magnet placement is described for integrated circuit packages. In one example, a terminal is applied to a magnet. The magnet is then placed on a top layer of a substrate with solder between the terminal and the top layer, and the solder is reflowed to attach the magnet to the substrate.