公开(公告)号：US20100072402A1

公开(公告)日：2010-03-25

申请号：US12238265

申请日：2008-09-25

Applicant: Shu Satoh ,  John Adamik ,  Manny Sieradzki

Inventor： Shu Satoh ,  John Adamik ,  Manny Sieradzki

IPC: H01J37/08 ,  H01J27/00

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/023 ,  H01J37/04 ,  H01J37/067 ,  H01J37/15 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/0213 ,  H01J2237/0458 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/31701

Abstract: An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.

Abstract translation: 一种提取电极操纵器系统，包括离子源，抑制电极和接地电极，其中两个电极由同轴布置的两个水冷支撑管支撑。 高压绝缘体环位于同轴支撑管系统的另一端，用作内管的机械支撑件，也用作高压真空馈通，以防止溅射和涂覆绝缘表面。

公开(公告)号：US20090309042A1

公开(公告)日：2009-12-17

申请号：US12309460

申请日：2007-07-12

Applicant: Gary Proudfoot ,  Gordon Robert Green ,  Robert Kenneth Trowell

Inventor： Gary Proudfoot ,  Gordon Robert Green ,  Robert Kenneth Trowell

IPC: H01J27/00

CPC classification number: H01J27/18 ,  H01J27/024 ,  H01J37/04 ,  H01J37/08 ,  H01J2237/04735 ,  H01J2237/083

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract translation: 本发明涉及一种离子枪（10），其包括从RF源（12）驱动的等离子体发生器（11），具有出口（14）的等离子体或源室（13），其上安装有加速器格栅 （15）。 加速器网格（15）包括四个单独的网格。 最靠近出口（14）的第一栅极（16）通过直流源（16a）保持在正电压，第二栅极（17）被直流源（17a）强烈地保持为负。 第三栅极（18）通过直流源（18a）保持在比第二栅极（17）的负电压低得多的负电压，第四栅极接地。 还描述了安装这些网格的方法。

公开(公告)号：US07609002B2

公开(公告)日：2009-10-27

申请号：US11410933

申请日：2006-04-26

Applicant: Won-tae Lee

Inventor： Won-tae Lee

IPC: H01J7/24

CPC classification number: H05H1/54 ,  H01J27/024 ,  H01J27/143 ,  H01J37/321 ,  H01J37/32357

Abstract: A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

Abstract translation: 一种等离子体加速装置和等离子体处理系统，其有效地提高等离子体束的漂移速度，并且制造简单并且构造简单。 通道包括在通道的端部处开口的出口端口。 气体供应部分在通道中供应气体。 等离子体发生器为通道中的气体提供电离能以产生等离子体束。 等离子体加速部分包括在通道中彼此间隔开预定距离横向布置的多个格栅，用于将由等离子体发生器产生的等离子体束用电场加速到通道的出口。 等离子体加速装置和等离子体处理系统比使用由磁场和次级电流引起的电磁力的传统加速装置更有效地提高等离子体束的漂移速度。

公开(公告)号：US20080179186A1

公开(公告)日：2008-07-31

申请号：US12014279

申请日：2008-01-15

Applicant: Kazuhiro Shimura ,  Kenji Shirako ,  Kosuke Takagi

Inventor： Kazuhiro Shimura ,  Kenji Shirako ,  Kosuke Takagi

IPC: C23C14/46

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/3146

Abstract: Provided is a thin film forming apparatus that can focus ion beams onto a target and reduce a manufacturing cost. In a thin film forming apparatus radiating an ion beam (17) from an ion source (22) toward a target (6) and forming a thin film on a surface of a substrate (5) with particles sputtered by the ion beam, the ion source (22) includes an electrode for extracting ions from plasma and accelerating the extracted ions. The electrode includes a plate-shaped accelerator electrode (26) in which a plurality of accelerator apertures are bored, and a plate-shaped decelerator electrode (27) in which a plurality of decelerator apertures are bored. The plurality of accelerator apertures and the plurality of decelerator apertures are aligned and offset to focus the ion beams (17).

Abstract translation: 本发明提供一种薄膜形成装置，其能够将离子束聚焦到靶上并降低制造成本。 在从离子源（22）朝向靶（6）放射离子束（17）并在基板（5）的表面上用离子束溅射的颗粒形成薄膜的薄膜形成装置中，离子 源极（22）包括用于从等离子体中提取离子并加速提取的离子的电极。 电极包括其中钻有多个加速器孔的板状加速电极（26），以及多个减速器孔被钻孔的板形减速电极（27）。 多个加速器孔和多个减速器孔被对准和偏移以聚焦离子束（17）。

公开(公告)号：US20080121811A1

公开(公告)日：2008-05-29

申请号：US11647714

申请日：2006-12-29

Applicant: Thomas N. Horsky ,  Robert W. Milgate ,  George P. Sacco ,  Dale C. Jacobson ,  Wade A. Krull

Inventor： Thomas N. Horsky ,  Robert W. Milgate ,  George P. Sacco ,  Dale C. Jacobson ,  Wade A. Krull

IPC: H01J27/02

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/02 ,  H01J27/024 ,  H01J37/08 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  Y10T137/0357 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/7761 ,  Y10T137/85954 ,  Y10T137/85978 ,  Y10T137/85986 ,  Y10T137/86002

Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

Abstract translation: 离子源的使用寿命通过源具有用于使用反应性卤素气体对离子源和引出电极进行原位蚀刻清洁以及具有延长清洁之间的使用持续时间的特征的源来增强或延长。 后者包括准确的蒸汽流量控制，离子束光学的精确聚焦，以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源，其将F或Cl离子递送到第一离子源，以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间，并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八硼烷作为原料的长设备正常运行时间，以及当使用蒸发的元素砷和磷时，并且用于提高离子注入期间的束稳定性的方法和装置。

公开(公告)号：US07351987B2

公开(公告)日：2008-04-01

申请号：US11202100

申请日：2005-08-12

Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

Abstract translation: 照射系统包括光束产生源，质量分析装置，光束变换器，用于使光束往复摆动的扫描偏转器，光束并行化装置，加速/减速装置以及能量过滤装置。 根据本发明，提供了产生电场和磁场以弯曲轨迹的混合角能量滤波器作为能量过滤装置。 在混合角能量滤波器的下游侧还设置有一对多表面能量狭缝单元，其具有可根据用于照射的离子种类在其间切换的多个能量狭缝。 在诸如中性粒子，不同种类的掺杂剂，具有不同能量的离子，金属和灰尘颗粒的污染物的量非常小的条件下，可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

公开(公告)号：US20080048131A1

公开(公告)日：2008-02-28

申请号：US11790682

申请日：2007-04-26

Applicant: Richard Goldberg ,  Christopher Burgess

Inventor： Richard Goldberg ,  Christopher Burgess

IPC: G21K5/00 ,  H05B31/26

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J2237/083

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract translation: 本发明涉及适用于离子注入机的离子源用前板。 根据本发明的前板包括正面和反面，出口孔用于允许从离子源排出离子，该离子源在正面和反面之间基本上直线地延伸穿过前板，以及从正面穿过前板的狭槽 侧面以斜面反转至少部分其深度，所述狭槽从前板的一侧延伸以连接出口孔。 当从前面观察时，槽倾斜以将视线遮挡到离子源中，但是提供了扩展间隙。

公开(公告)号：US20070024201A1

公开(公告)日：2007-02-01

申请号：US11410933

申请日：2006-04-26

Applicant: Won-tae Lee

Inventor： Won-tae Lee

IPC: H01J7/24

CPC classification number: H05H1/54 ,  H01J27/024 ,  H01J27/143 ,  H01J37/321 ,  H01J37/32357

Abstract: A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

Abstract translation: 一种等离子体加速装置和等离子体处理系统，其有效地提高等离子体束的漂移速度，并且制造简单并且构造简单。 通道包括在通道的端部处开口的出口端口。 气体供应部分在通道中供应气体。 等离子体发生器为通道中的气体提供电离能以产生等离子体束。 等离子体加速部分包括在通道中彼此间隔开预定距离横向布置的多个格栅，用于将由等离子体发生器产生的等离子体束用电场加速到通道的出口。 等离子体加速装置和等离子体处理系统比使用由磁场和次级电流引起的电磁力的传统加速装置更有效地提高等离子体束的漂移速度。

公开(公告)号：US20070023700A1

公开(公告)日：2007-02-01

申请号：US11474499

申请日：2006-06-26

Applicant: Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

Inventor： Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/302 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2236 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621

Abstract: Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

Abstract translation: 即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。 离子掺杂完成后，停止供给原料气体，并保持供给氢气或稀有气体。 之后，灯丝的电流降低，灯丝温度降低。 因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

公开(公告)号：US20060272776A1

公开(公告)日：2006-12-07

申请号：US11502695

申请日：2006-08-11

Applicant: Thomas Horsky ,  Robert Milgate ,  George Sacco ,  Dale Jacobson ,  Wade Krull

Inventor： Thomas Horsky ,  Robert Milgate ,  George Sacco ,  Dale Jacobson ,  Wade Krull

IPC: H01L21/306

CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/024 ,  H01J37/3171 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0812 ,  H01J2237/083 ,  H01J2237/31701 ,  H01L21/265

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition. The service lifetime of the system is enhanced by provisions for in-situ etch cleaning of the ion source and extraction electrode, using reactive halogen gases, and by having features that extend the service duration between cleanings, including accurate vapor flow control and accurate focusing of the ion beam optics. A remote plasma source delivers F or Cl ions to the de-energized ion source for the purpose of cleaning deposits in the ion source and the extraction electrode. These techniques enable long equipment uptime when running condensable feed gases such as sublimated vapors, and are particularly applicable for use with so-called cold ion sources and universal ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecaborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.