公开(公告)号：US20110006209A1

公开(公告)日：2011-01-13

申请号：US12813064

申请日：2010-06-10

Applicant: Mitsutoshi Yoshikawa

Inventor： Mitsutoshi Yoshikawa

IPC: H01J37/26

CPC classification number: H01J37/09 ,  H01J37/023 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/188 ,  H01J2237/24475 ,  H01J2237/2605

Abstract: An electron beam apparatus has the electron optical column for releasing an electron beam from the front-end portion after the beam is emitted from an electron beam source located on a rear-end portion of the column, a specimen chamber connected to a front-end portion of the column, and an aperture member withdrawably disposed in the front-end portion of the column within the specimen chamber. The apparatus further includes a rotating mechanism for rotating the aperture member along a given plane lying along the direction of a path of the beam. Thus, the aperture member can be attached and detached to and from the front-end portion of the column.

Abstract translation: 电子束装置具有用于在从位于柱的后端部分的电子束源发射光束之后从前端部分释放电子束的电子束，连接到前端的样本室 所述柱的一部分，以及在所述试样室内的所述塔的前端部抽出地设置的孔部件。 该装置还包括旋转机构，用于沿着沿着梁的路径方向的给定平面旋转孔径构件。 因此，孔部件可以与柱的前端部分分离和分离。

公开(公告)号：US20100200768A1

公开(公告)日：2010-08-12

申请号：US12370555

申请日：2009-02-12

Applicant: JAMES BUFF ,  SVETLANA RADOVANOV ,  BON-WOONG KOO ,  WILHELM PLATOW ,  FRANK SINCLAIR ,  JEFFREY D. LISCHER ,  CRAIG CHANEY ,  STEVEN BORICHEVSKY ,  ERIC R. COBB ,  MAYUR JAGTAP ,  KENNETH PURSER ,  VICTOR M. BENVENISTE ,  SHARDUL S. PATEL

Inventor： JAMES BUFF ,  SVETLANA RADOVANOV ,  BON-WOONG KOO ,  WILHELM PLATOW ,  FRANK SINCLAIR ,  JEFFREY D. LISCHER ,  CRAIG CHANEY ,  STEVEN BORICHEVSKY ,  ERIC R. COBB ,  MAYUR JAGTAP ,  KENNETH PURSER ,  VICTOR M. BENVENISTE ,  SHARDUL S. PATEL

IPC: H01J27/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明电极提高离子束质量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。 该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

公开(公告)号：US07772576B2

公开(公告)日：2010-08-10

申请号：US12150207

申请日：2008-04-24

Applicant: Cornel Danciu ,  Thomas Abels ,  Brian Good

Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC: G21F5/02

CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US20100171048A1

公开(公告)日：2010-07-08

申请号：US12294674

申请日：2007-03-27

Applicant: Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

Inventor： Ichiro Nakamoto ,  Hiroshi Horai ,  Tatsuya Sodekoda ,  Masahiro Yoshida

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0455 ,  H01J2237/057 ,  H01L21/265

Abstract: In an ion implanting apparatus 10 including a separation slit 20 which receives an ion beam 1 having passed through a mass-separation electromagnet 17 and allows a desired type of ion to selectively pass therethrough, the separation slit 20 is operable to vary a shape of a gap through which the ion beam 1 passes. In addition, the ion implanting apparatus 10 includes a variable slit 30 which is disposed between an extraction electrode system 15 and the mass-separation electromagnet 17 so as to form a gap through which the ion beam 1 passes and is operable to vary a shape of the gap so as to shield a part of the ion beam 1 extracted from the ion source 12. The ion implanting apparatus 10 may include both or one of the separation slit 20 and the variable slit 30.

Abstract translation: 在包括分离狭缝20的离子注入装置10中，分离狭缝20接收已经通过质量分离电磁体17并允许期望类型的离子选择性地通过的离子束1，分离狭缝20可操作以改变形状 离子束1通过的间隙。 此外，离子注入装置10包括可变狭缝30，其设置在提取电极系统15和质量分离电磁体17之间，以形成离子束1通过的间隙，并且可操作地改变形状 间隙，以便屏蔽从离子源12提取的离子束1的一部分。离子注入装置10可以包括分离狭缝20和可变狭缝30中的两个或一个。

公开(公告)号：US07732790B2

公开(公告)日：2010-06-08

申请号：US11702677

申请日：2007-02-06

Applicant: Jitsuo Takada ,  Minoru Ikeda ,  Satoshi Matsufune

Inventor： Jitsuo Takada ,  Minoru Ikeda ,  Satoshi Matsufune

IPC: G21K5/04

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/045

Abstract: An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at least an inner surface of the through hole 222 of the member 220 having a through hole and being capable of forming a beam geometry is coated with a thermal spraying film, unwanted deposition of the ion species on the inner surface of the through hole 222 is inhibited. Moreover, since a deposition film generated on the surface of the thermal spraying film has an unoriented poly-crystalline structure that exhibits extremely higher inter-layer adhesiveness, a failure of the processing object caused by a scattering of the particles peeled-off from the deposition layer is prevented.

Abstract translation: 提供了一种离子注入装置，其防止由形成离子束的束几何形状的构件的通孔的内表面上的离子物质的沉积颗粒的散射引起的加工对象的故障。 由于具有通孔并且能够形成光束几何形状的构件220的通孔222的至少内表面涂覆有热喷涂膜，所以不希望的沉积在通孔222的内表面上 被抑制。 此外，由于在热喷涂膜的表面上产生的沉积膜具有显示出非常高的层间粘附性的未取向的多晶体结构，所以由于从沉积物剥离的颗粒的散射引起的加工对象的故障 防止了层。

公开(公告)号：US07728308B2

公开(公告)日：2010-06-01

申请号：US11628196

申请日：2005-05-13

Applicant: Tao Zhang

Inventor： Tao Zhang

IPC: H01J3/26

CPC classification number: G21K1/087 ,  H01J37/045 ,  H01J37/09 ,  H01J37/1472 ,  H01J37/15 ,  H01J2237/028 ,  H01J2237/0451 ,  H01J2237/3175

Abstract: A beam blanking unit (1) comprises first and second blanking plates (2, 3) mounted to a support plate (15). A stopper (4) is mechanically and electrically connected to the first blanking plate (2).

Abstract translation: 光束消隐单元（1）包括安装到支撑板（15）的第一和第二消隐板（2,3）。 制动器（4）机械地和电连接到第一冲裁板（2）。

公开(公告)号：US07714308B2

公开(公告)日：2010-05-11

申请号：US11899291

申请日：2007-09-05

Applicant: Masahito Hiroshima

Inventor： Masahito Hiroshima

IPC: H01J37/30 ,  H01J37/08 ,  G21K5/00

CPC classification number: H01J37/1472 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0456 ,  H01J2237/0458 ,  H01J2237/0835

Abstract: This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

Abstract translation: 该VSB光刻系统包括用于在设置的每个矩形开口部分中形成单个电子束的第一，第二和第三孔，并且使用通过使光束穿过第一，第二和第二孔而形成的单个电子束来绘制图形图案 第三个孔径顺序。 第一，第二和第三孔中的每一个具有用于围绕光轴旋转地驱动孔径至0至360°任意角度的机构。 此外，在第三孔中，设置有用于改变矩形开口部分的开口狭缝宽度的机构。

公开(公告)号：US20100025363A1

公开(公告)日：2010-02-04

申请号：US12502344

申请日：2009-07-14

Applicant: Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

Inventor： Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

IPC: C23F1/00 ,  C23F1/08

CPC classification number: G11B5/8404 ,  H01J27/024 ,  H01J37/04 ,  H01J37/09 ,  H01J37/3053 ,  H01J37/32422 ,  H01J2237/022 ,  H01J2237/0453 ,  H01J2237/0822 ,  H01J2237/0825

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

Abstract translation: 本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。 根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器 经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

公开(公告)号：US20100024726A1

公开(公告)日：2010-02-04

申请号：US12184521

申请日：2008-08-01

Applicant: Paul N. ZEYTOONIAN

Inventor： Paul N. ZEYTOONIAN

IPC: C23C16/00 ,  F16B17/00

CPC classification number: H01J37/3171 ,  F16B5/02 ,  F16B37/14 ,  H01J37/09 ,  H01J37/32458 ,  H01J2237/022 ,  H01J2237/032 ,  Y10S411/999 ,  Y10T403/15

Abstract: One embodiment of this fastening apparatus comprises a cap with a passage through the length of the cap. This cap is received by the upper panels of a body. The embodiments of this fastening apparatus may have two or more upper panels that form a recess. The body also has a lower region with a passage. The upper panels are flexible and can translate to retain the cap within the recess. A threaded member is disposed in the passage of the body. This cap may be fabricated of graphite in one instance.

Abstract translation: 该紧固装置的一个实施例包括具有穿过盖的长度的通道的盖。 这个帽子被身体的上部面板所接收。 该紧固装置的实施例可以具有形成凹部的两个或更多个上面板。 身体也有一个较低的区域与通道。 上面板是柔性的并且可以平移以将盖保持在凹部内。 螺纹构件设置在主体的通道中。 在一种情况下，该盖可以由石墨制成。

公开(公告)号：US07601955B2

公开(公告)日：2009-10-13

申请号：US11896622

申请日：2007-09-04

Applicant: Yang-Kuao Kuo ,  Kuo-Hsing Teng

Inventor： Yang-Kuao Kuo ,  Kuo-Hsing Teng

IPC: G01N7/00

CPC classification number: H01J37/28 ,  H01J37/09 ,  H01J2237/045

Abstract: A scanning electron microscope is provided. The scanning electron microscope includes an electron beam source generating a primary electron beam, a condenser lens converging the primary electron beam, a base plate with a diamond film formed on the surface thereof having an aperture for passing of the primary electron beam, and a scanning unit two-dimensionally scanning a specimen with the primary electron beam.

Abstract translation: 提供扫描电子显微镜。 扫描电子显微镜包括产生一次电子束的电子束源，会聚一次电子束的聚光透镜，在其表面上形成有金刚石膜的基板，其具有用于使一次电子束通过的孔，扫描电子显微镜 单元用一次电子束二维扫描样品。