公开(公告)号：US20090121122A1

公开(公告)日：2009-05-14

申请号：US11939173

申请日：2007-11-13

Applicant: Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

Inventor： Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

IPC: H01J37/08 ,  G01D18/00

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.

Abstract translation: 公开了用于测量和控制离子束角度和密度均匀性的技术。 在一个特定的示例性实施例中，技术可以被实现为用于测量和控制离子束角度和密度均匀性的装置。 该装置可以包括具有开口，杯子和在杯后部的至少一个收集器的测量组件。 该装置还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

公开(公告)号：US20070023697A1

公开(公告)日：2007-02-01

申请号：US11341838

申请日：2006-01-27

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/08

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

公开(公告)号：US20100200768A1

公开(公告)日：2010-08-12

申请号：US12370555

申请日：2009-02-12

Applicant: JAMES BUFF ,  SVETLANA RADOVANOV ,  BON-WOONG KOO ,  WILHELM PLATOW ,  FRANK SINCLAIR ,  JEFFREY D. LISCHER ,  CRAIG CHANEY ,  STEVEN BORICHEVSKY ,  ERIC R. COBB ,  MAYUR JAGTAP ,  KENNETH PURSER ,  VICTOR M. BENVENISTE ,  SHARDUL S. PATEL

Inventor： JAMES BUFF ,  SVETLANA RADOVANOV ,  BON-WOONG KOO ,  WILHELM PLATOW ,  FRANK SINCLAIR ,  JEFFREY D. LISCHER ,  CRAIG CHANEY ,  STEVEN BORICHEVSKY ,  ERIC R. COBB ,  MAYUR JAGTAP ,  KENNETH PURSER ,  VICTOR M. BENVENISTE ,  SHARDUL S. PATEL

IPC: H01J27/00

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明电极提高离子束质量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。 该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

公开(公告)号：US20070108390A1

公开(公告)日：2007-05-17

申请号：US11536992

申请日：2006-09-29

Applicant: Svetlana Radovanov ,  Peter Kellerman ,  Victor Benveniste ,  Robert Lindberg ,  Kenneth Purser ,  Tyler Rockwell ,  James Buff ,  Anthony Renau

Inventor： Svetlana Radovanov ,  Peter Kellerman ,  Victor Benveniste ,  Robert Lindberg ,  Kenneth Purser ,  Tyler Rockwell ,  James Buff ,  Anthony Renau

IPC: H01J37/12

CPC classification number: H01J37/12 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/121

Abstract: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.

Abstract translation: 公开了一种用于成形带状离子束的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。 该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形 带状离子束。

公开(公告)号：US20060169924A1

公开(公告)日：2006-08-03

申请号：US11341839

申请日：2006-01-27

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/08

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

公开(公告)号：US20070181832A1

公开(公告)日：2007-08-09

申请号：US11784073

申请日：2007-04-05

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/08

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

公开(公告)号：US20070018114A1

公开(公告)日：2007-01-25

申请号：US11185141

申请日：2005-07-20

Applicant: Kenneth Purser ,  Albert Litherland ,  Norman Turner

Inventor： Kenneth Purser ,  Albert Litherland ,  Norman Turner

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J49/145 ,  H01J2237/0815 ,  H01J2237/31705 ,  H05H3/02

Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

Abstract translation: 本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。 此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

公开(公告)号：US20060197037A1

公开(公告)日：2006-09-07

申请号：US11312055

申请日：2005-12-20

Applicant: Kenneth Purser ,  Norman Turner

Inventor： Kenneth Purser ,  Norman Turner

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/0042 ,  H01J2237/055 ,  H01J2237/057

Abstract: The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

Abstract translation: 现代半导体集成电路的制造通常需要涉及高电流的低能带电掺杂原子的注入步骤。 当使用这种光束时，添加电子或负离子来中和空间电荷的作用对于获得成功往往是至关重要的。 没有这个补充，离子束可以“爆炸”，导致强度的损失和光束聚焦的破坏。 在本公开中，提出了用于在磁场偏转区域内的带状束的边界内引入和约束中和低能电子和负离子的方法。 描述了用于基于电子损耗，等离子体桥连接和二次电子产生的减少来维持中和的装置。 作为等离子体引入偏转区域的一部分，新型的低温泵送装置选择性地从等离子体流中除去中性原子。

公开(公告)号：US20060197029A1

公开(公告)日：2006-09-07

申请号：US11289863

申请日：2005-11-30

Applicant: Kenneth Purser ,  Norman Turner

Inventor： Kenneth Purser ,  Norman Turner

IPC: H01J1/50

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/31701

Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

Abstract translation: 一种满足日益增长的要求的方法和装置，其用于提高在半导体晶片通过离子束时冲击半导体晶片的注入离子的强度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合在一起，以抵抗离子束诱导的空间电荷力的破坏性影响。 新型光学元件的设计成为可能：（1）当光束通过均匀或不均匀的磁场时，对带状离子束进行聚焦; （2）减少包含直流电的离子的损失。 当带状光束被磁场偏转时，带状光束到达磁极。

公开(公告)号：US20050242294A1

公开(公告)日：2005-11-03

申请号：US11154085

申请日：2005-06-16

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/141 ,  H01J37/08 ,  H01J37/14 ,  H01J37/147 ,  H01J37/315 ,  H01J37/317 ,  H01L21/425

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.