公开(公告)号：US20130134860A1

公开(公告)日：2013-05-30

申请号：US13704902

申请日：2011-02-23

Applicant: Yong Hyup Kim ,  Wal Jun Kim

Inventor： Yong Hyup Kim ,  Wal Jun Kim

IPC: H01J9/02 ,  H01J1/304 ,  B23H9/00

CPC classification number: H01J9/025 ,  B23H9/00 ,  H01B1/04 ,  H01B1/08 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30449 ,  H01J2201/30469

Abstract: The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

Abstract translation: 导电纳米结构体及其成型方法技术领域本发明涉及导电性纳米结构体，其成型方法及使用其的场致发射体的制造方法。 更具体地说，本发明涉及一种场致发射纳米结构，其包括导电衬底，布置在导电衬底上的导电纳米结构以及布置在导电衬底和导电纳米结构之间的界面中的导电界面化合物，以及一 其制造方法以及使用该场致发射体的制造方法。

公开(公告)号：US20130119252A1

公开(公告)日：2013-05-16

申请号：US13811392

申请日：2011-07-13

Applicant: Yoshimi Kawanami ,  Shinichi Matsubara ,  Hironori Moritani ,  Noriaki Arai ,  Hiroyasu Shichi ,  Tomihiro Hashizume ,  Hiroyasu Kaga ,  Norihide Saho ,  Hiroyuki Muto ,  Yoichi Ose

Inventor： Yoshimi Kawanami ,  Shinichi Matsubara ,  Hironori Moritani ,  Noriaki Arai ,  Hiroyasu Shichi ,  Tomihiro Hashizume ,  Hiroyasu Kaga ,  Norihide Saho ,  Hiroyuki Muto ,  Yoichi Ose

IPC: H01J37/26 ,  B23K9/00 ,  H01J1/304

CPC classification number: H01J37/261 ,  B23K9/00 ,  H01J1/3044 ,  H01J37/08 ,  H01J37/26 ,  H01J2237/0807

Abstract: To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.

Abstract translation: 为了提供具有高角电流密度的气体场离子源，气体离子源被配置为使得至少构成气体离子源的发射极尖端的基体是单晶金属，使得 发射极尖端形成为在顶部具有单个原子的锥体形状或锥形形状，并且使得通过单个原子将氦气离子化的情况下的提取电压设定为10kV以上。

公开(公告)号：US20120133270A1

公开(公告)日：2012-05-31

申请号：US12981577

申请日：2010-12-30

Applicant: YANG WEI ,  SHOU-SHAN FAN

Inventor： YANG WEI ,  SHOU-SHAN FAN

IPC: H01J1/62 ,  H01J1/304

CPC classification number: H01J31/127 ,  H01J2329/0431 ,  H01J2329/0436 ,  H01J2329/0455

Abstract: A pixel tube for field emission display includes a sealed container, an anode, a phosphor, and a cathode. The sealed container has a light permeable portion. The anode is located in the sealed container and spaced from the light permeable portion. The phosphor layer is located on the anode. The cathode is spaced from the anode and includes a cathode emitter. The cathode emitter includes a carbon nanotube pipe. One end of the carbon nanotube pipe has a plurality of carbon nanotube peaks.

Abstract translation: 用于场致发射显示器的像素管包括密封容器，阳极，荧光体和阴极。 密封容器具有透光部分。 阳极位于密封容器中并与透光部分隔开。 磷光体层位于阳极上。 阴极与阳极间隔开并且包括阴极发射器。 阴极发射体包括碳纳米管管。 碳纳米管管的一端具有多个碳纳米管峰。

公开(公告)号：US20120091881A1

公开(公告)日：2012-04-19

申请号：US13252001

申请日：2011-10-03

Applicant: Eiji Ozaki ,  Taiko Motoi ,  Ryoji Fujiwara ,  Akiko Kitao

Inventor： Eiji Ozaki ,  Taiko Motoi ,  Ryoji Fujiwara ,  Akiko Kitao

IPC: H01J19/24 ,  H01J1/304

CPC classification number: H01J29/467 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/4608

Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.

Abstract translation: 本发明提供一种电子发射器件，其包括阴极和从阴极发射的电子被照射到其上的栅极。 栅极包括至少一层含有钼和氧的层，其设置在从阴极发射的电子被照射的部分上。 该层在通过电子测量的光谱中分别具有在397eV至401eV的范围内的峰值，414eV至418eV的范围，534eV至538eV的范围以及540eV至547eV的范围内的峰值 使用透射电子显微镜的能量损失光谱。

公开(公告)号：US08154188B2

公开(公告)日：2012-04-10

申请号：US12694474

申请日：2010-01-27

Applicant: Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

Inventor： Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

IPC: H01J1/304 ,  H01J19/02 ,  H01J19/38

CPC classification number: H01J3/021 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/0216 ,  H01J2203/0272 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4673 ,  H01J2329/4682

Abstract: An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

Abstract translation: 提供了一种具有电子发射器件的电子束装置，该电子发射器件具有简单的结构，表现出高的电子发射效率，稳定地工作，并且其中发射的电子被有效地收敛。 电子束装置包括：在其表面上具有凹口的绝缘体; 位于绝缘体表面上的门; 至少一个阴极，其具有从所述凹口的边缘向所述栅极突出的突出部分，并且位于所述绝缘体的所述表面上，使得所述突出部分与所述栅极相对; 以及经由所述栅极与所述突出部相对的阳极，其中，所述栅极形成在所述绝缘体的表面上，使得与所述阴极相对的区域的至少一部分向外突出，并且设置有凹部， 的栅极凹进并插入投影区域。

公开(公告)号：US20110309737A1

公开(公告)日：2011-12-22

申请号：US13114424

申请日：2011-05-24

Applicant: Satoshi Tsutsui ,  Toshiharu Sumiya ,  Takahiro Hachisu

Inventor： Satoshi Tsutsui ,  Toshiharu Sumiya ,  Takahiro Hachisu

IPC: H01J1/304 ,  H01J9/34 ,  H01J1/00 ,  H01J9/02

CPC classification number: H01J1/3046 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: The electron-emitting device is configured such that an inclination angle θ2 of a lower portion from a height-direction intermediate portion to the lower end is larger than the inclination angle θ1 of an upper portion from a lower edge of the concave portion to a height-direction intermediate portion. And, an electric resistance of a lower cathode portion which is a portion of the lower portion of the cathode is larger than that of an upper cathode portion which is a portion of the upper portion of the cathode.

Abstract translation: 电子发射器件被配置为使得从高度方向中间部分到下端的下部的倾斜角度＆amp;θ2大于从凹部的下边缘的上部的倾斜角度＆amp; 部分到高度方向中间部分。 并且，作为阴极的下部的一部分的下阴极部的电阻大于作为阴极的上部的一部分的上阴极部的电阻。

公开(公告)号：US08075360B2

公开(公告)日：2011-12-13

申请号：US12253668

申请日：2008-10-17

Applicant: Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

Inventor： Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

IPC: H01J1/304 ,  H01J9/12

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

Abstract translation: 一种电子发射器件的制造方法，包括以下步骤：预先制备设置有绝缘或半导体层的基底衬底，并将该层暴露于包含含有中性自由基的氢的气氛中。 优选绝缘或半导电层含有金属颗粒; 绝缘或半导体层是以碳为主要成分的膜; 含氢的中性基团含有H.，CH 3，C 2 H 5和C 2 H中的任何一种。 或其混合气体; 与大气中的带电粒子的密度相比，气氛中含有氢的中性基团的密度大于1000倍; 并且将绝缘或半导体层暴露于大气的步骤是通过使用具有偏置栅格的等离子体装置进行氢终止的步骤。

公开(公告)号：US20100231118A1

公开(公告)日：2010-09-16

申请号：US12678038

申请日：2008-09-12

Applicant: Tadahiro Ohmi ,  Tetsuya Goto

Inventor： Tadahiro Ohmi ,  Tetsuya Goto

IPC: H01J63/04 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J61/0675 ,  H01J9/022 ,  H01J61/72

Abstract: An object of the present invention is to provide a cathode body having a high intensity, a high efficiency, and a long life. The cathode body of the present invention is manufactured by forming, on a cylindrical cup formed of a metal alloy containing lanthanum oxide and having a high thermal conductivity, a LaB6 film using a magnetron sputtering apparatus capable of sputtering at a low electron temperature.

Abstract translation: 本发明的目的是提供一种具有高强度，高效率和长寿命的阴极体。 本发明的阴极体通过使用能够在低电子温度下溅射的磁控管溅射装置，在由包含氧化镧并具有高导热性的金属合金形成的圆筒形杯上形成LaB6膜来制造。

公开(公告)号：US07687981B2

公开(公告)日：2010-03-30

申请号：US11381981

申请日：2006-05-05

Applicant: Farzad Parsapour

Inventor： Farzad Parsapour

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/00

CPC classification number: D01F9/12 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  D01F9/127 ,  D01F9/1273 ,  D01F9/133 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/0455 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/843 ,  Y10S977/939 ,  Y10S977/952

Abstract: Described is a method for preparation of carbon nanotubes (CNTs) with medium to low-site density growth for use in field emission devices (FEDs). The method involves the deposition of a non-catalytic metal layer (interlayer), preferably a metallic conductor, onto the surface of a substrate, prior to the deposition of a catalytic layer (overlayer). The interlayer allows for only partial (sparse) growth of CNTs on the substrate, and helps to prevent resist layer “lift-off” when photolithographic processing is employed.

Abstract translation: 描述了一种用于场致发射器件（FED）的具有中低位密度生长的碳纳米管（CNT）的制备方法。 该方法包括在沉积催化剂层（覆盖层）之前将非催化金属层（中间层），优选金属导体沉积到衬底的表面上。 中间层仅允许CNT在基板上的仅部分（稀疏）生长，并且当采用光刻处理时有助于防止抗蚀剂层“剥离”。

公开(公告)号：US20090072750A1

公开(公告)日：2009-03-19

申请号：US12233859

申请日：2008-09-19

Applicant: Akintunde I. Akinwande ,  Luis Fernando Velasquez-Garcia

Inventor： Akintunde I. Akinwande ,  Luis Fernando Velasquez-Garcia

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.

Abstract translation: 提供场发射器阵列结构。 场发射极阵列结构包括形成在半导体衬底上的多个垂直未门控晶体管结构。 半导体衬底包括多个垂直柱结构，以限定所述未门控晶体管结构。 在所述垂直非门控晶体管结构上形成多个发射极结构。 所述发射极结构中的每一个以压载方式定位在所述垂直非门控晶体管结构中的一个上，以便允许所述垂直非门控晶体管结构有效地提供具有较大饱和电流的高动态电阻。