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公开(公告)号：US20240134182A1
公开(公告)日：2024-04-25
申请号：US18273478
申请日：2022-01-12
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
CPC classification number: G02B26/0816 , G02B27/0977
Abstract: An optical filter apparatus including an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at the optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.
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公开(公告)号：US20240126181A1
公开(公告)日：2024-04-18
申请号：US18511454
申请日：2023-11-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham SLACHTER , Stefan HUNSCHE , Wim Tjibbo TEL , Anton Bernhard VAN OOSTEN , Koenraad VAN INGEN SCHENAU , Gijsbert RISPENS , Brennan PETERSON
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70558 , G03F7/70625
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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公开(公告)号：US11961698B2
公开(公告)日：2024-04-16
申请号：US17344446
申请日：2021-06-10
Applicant: ASML Netherlands B.V.
Inventor： Christiaan Otten , Peter-Paul Crans , Marc Smits , Laura Del Tin , Christan Teunissen , Yang-Shan Huang , Stijn Wilem Herman Karel Steenbrink , Xuerang Hu , Qingpo Xi , Xinan Luo , Xuedong Liu
IPC: H01J37/15 , H01J37/02 , H01J37/14 , H01J37/147 , H01J37/18 , H01J37/244 , H01J37/28 , H01J37/20 , H01J37/317
CPC classification number: H01J37/15 , H01J37/023 , H01J37/14 , H01J37/1477 , H01J37/18 , H01J37/244 , H01J37/28 , H01J37/20 , H01J37/3177 , H01J2237/2006 , H01J2237/20214 , H01J2237/2817
Abstract: Disclosed herein is a module for supporting a device configured to manipulate charged particle paths in a charged particle apparatus, the module comprising: a support arrangement configured to support the device, wherein the device is configured to manipulate a charged particle path within the charged particle apparatus; and a support positioning system configured to move the support arrangement within the module; wherein the module is arranged to be field replaceable in the charged particle apparatus.
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公开(公告)号：US11960213B2
公开(公告)日：2024-04-16
申请号：US18299534
申请日：2023-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Raymond Wilhelmus Louis Lafarre , Sjoerd Nicolaas Lambertus Donders , Nicolaas Ten Kate , Nina Vladimirovna Dziomkina , Yogesh Pramod Karade , Elisabeth Corinne Rodenburg
IPC: G03F7/00 , B05D3/06 , B05D5/00 , B22F7/06 , B22F10/00 , B22F10/20 , B23K26/342 , B23K26/354 , B23Q3/18 , B33Y10/00 , B33Y80/00 , G03F7/20 , B22F10/25 , B22F10/28 , B22F10/66
CPC classification number: G03F7/70341 , B05D3/06 , B05D5/00 , B22F7/062 , B22F10/00 , B22F10/20 , B23K26/342 , B23K26/354 , B23Q3/18 , B33Y10/00 , B33Y80/00 , G03F7/20 , G03F7/70416 , G03F7/707 , G03F7/70708 , G03F7/70716 , G03F7/70733 , G03F7/708 , B22F10/25 , B22F10/28 , B22F10/66
Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
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公开(公告)号：US20240116760A1
公开(公告)日：2024-04-11
申请号：US18276248
申请日：2022-02-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Paul Alexander VERMEULEN , Zomer Silvester HOUWELING
IPC: C01B32/174 , B01J19/12 , B01J19/24 , G03F1/62 , G03F7/00
CPC classification number: C01B32/174 , B01J19/121 , B01J19/24 , G03F1/62 , G03F7/70983 , B01J2219/0886 , B01J2219/0896 , B01J2219/12 , B82Y30/00 , C01B2202/36
Abstract: A carbon nanotube membrane including carbon nanotubes having a pre-selected bonding configuration or (m, n) chirality, wherein the carbon nanotube membrane has a substantial amount of carbon nanotubes having zigzag (m, 0) chirality and/or armchair (m, m) chirality. An apparatus for the treatment of a carbon-based membrane, a method for treating carbon based membranes, pellicles including carbon based membranes, lithographic apparatuses includes carbon nanotube membranes, as well as the use of carbon nanotube membranes in lithographic apparatuses and methods are also described.
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Patent Agency Ranking
公开(公告)号：US11953837B2
公开(公告)日：2024-04-09
申请号：US17423818
申请日：2019-11-05
Applicant: ASML Netherlands B.V.
IPC: G03F7/00
CPC classification number: G03F7/70783 , G03F7/70033
Abstract: The present invention provides a testing substrate (W) for estimating stress in production substrates due to a substrate support, said testing substrate having a support surface (SS) divided into predefined portions, wherein the predefined portions comprise at least one first portion (1) having a first coefficient of friction being substantially uniform across the at least one first portion, and at least one second portion (2) having a second coefficient of friction being substantially uniform across the at least one second portion, wherein the second coefficient of friction is different to the first coefficient of friction. The present invention also provides a method for estimating stress in a substrate due to a substrate support and a system for making such an estimation.
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公开(公告)号：US11953836B2
公开(公告)日：2024-04-09
申请号：US17653661
申请日：2022-03-07
Inventor： Lei Zhou , David L. Trumper , Ruvinda Gunawardana
CPC classification number: G03F7/70758 , G03F7/70741 , H02K41/033
Abstract: A reticle transport system having a magnetically levitated transportation stage is disclosed. Such a system may be suitable for use in vacuum environments, for example, ultra-clean vacuum environments. A magnetic levitated linear motor functions to propel the transportation stage in a linear direction along a defined axis of travel and to magnetically levitate the transportation stage.
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公开(公告)号：US11953835B2
公开(公告)日：2024-04-09
申请号：US17793726
申请日：2020-12-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Erwin John Van Zwet
IPC: G03F7/00
CPC classification number: G03F7/70558
Abstract: Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.
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89.发明授权公开(公告)号：US11953450B2
公开(公告)日：2024-04-09
申请号：US18056073
申请日：2022-11-16
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Den Boef
IPC: G01N21/956 , G03F7/00 , G06F7/20
CPC classification number: G01N21/95607 , G03F7/7015 , G03F7/70633
Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.
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公开(公告)号：US20240111218A1
公开(公告)日：2024-04-04
申请号：US18387082
申请日：2023-11-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Mark John MASLOW , Koen THUIJS , Peter David ENGBLOM , Ralph Timotheus HUIJGEN , Daan Maurits SLOTBOOM , Johannes Catharinus Hubertus MULKENS
IPC: G03F7/00
CPC classification number: G03F7/705 , G03F7/70525 , G03F7/7065 , G03F7/70658
Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.
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