中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

310 records (took 0.023 seconds)

    MICRO-ELECTRO MECHANICAL APPARATUS WITH PN-JUNCTION
    81.
    发明申请
    MICRO-ELECTRO MECHANICAL APPARATUS WITH PN-JUNCTION 有权
    具有PN结的微电子机械装置

    公开(公告)号：US20150183632A1

    公开(公告)日：2015-07-02

    申请号：US14487104

    申请日：2014-09-16

    Applicant: Industrial Technology Research Institute

    Inventor： Chung-Yuan Su ,  Chin-Fu Kuo ,  Chih-Yuan Chen ,  Chao-Ta Huang

    IPC: B81B3/00

    CPC classification number: B81B7/008 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0109 ,  G01P15/00 ,  G01P15/124 ,  G01P15/125 ,  G01P2015/0831 ,  G01P2015/0834 ,  G01R33/00 ,  G01R33/0286

    Abstract: A micro-electro mechanical apparatus having a PN-junction is provided. The micro-electro mechanical apparatus includes a movable mass, a conductive layer, and an electrode. The movable mass includes a P-type semiconductor layer and an N-type semiconductor layer. The PN-junction is formed between the P-type semiconductor layer and the N-type semiconductor layer. The micro-electro mechanical apparatus is capable of eliminating abnormal voltage signal when an alternating current passes through the conductive layer. The micro-electro mechanical apparatus is adapted to measure acceleration and magnetic field. The micro-electro mechanical apparatus can be other types of micro-electro mechanical apparatus such as micro-electro mechanical scanning micro-mirror.

    Abstract translation: 提供具有PN结的微机电装置。 微机电装置包括可移动质量块，导电层和电极。 可移动块包括P型半导体层和N型半导体层。 在P型半导体层和N型半导体层之间形成PN结。 微电子机械装置能够在交流电流通过导电层时消除异常电压信号。 微机电装置适用于测量加速度和磁场。 微电机械装置可以是其他类型的微电机械装置，例如微机电扫描微镜。

    Method for manufacturing a micromechanical structure, and micromechanical structure
    82.
    发明授权
    Method for manufacturing a micromechanical structure, and micromechanical structure 有权
    微机械结构的制造方法和微机械结构

    公开(公告)号：US08956544B2

    公开(公告)日：2015-02-17

    申请号：US13586226

    申请日：2012-08-15

    Applicant: Johannes Classen ,  Jochen Reinmuth ,  Sebastian Guenther ,  Pia Bustian-Todorov

    Inventor： Johannes Classen ,  Jochen Reinmuth ,  Sebastian Guenther ,  Pia Bustian-Todorov

    IPC: C23F1/00 ,  G01C19/5783 ,  B81C1/00 ,  G01P15/08

    CPC classification number: G01C19/5783 ,  B81B2201/025 ,  B81C1/00182 ,  G01P15/0802 ,  G01P2015/0882

    Abstract: A method for manufacturing a micromechanical structure, and a micromechanical structure. The micromechanical structure encompasses a first micromechanical functional layer, made of a first material, that comprises a buried conduit having a first end and a second end; a micromechanical sensor structure having a cap in a second micromechanical functional layer that is disposed above the first micromechanical functional layer; an edge region in the second micromechanical functional layer, such that the edge region surrounds the sensor structure and defines an inner side containing the sensor structure and an outer side facing away from the sensor structure; such that the first end is located on the outer side and the second end on the inner side.

    Abstract translation: 微机械结构的制造方法和微机械结构。 微机械结构包括由第一材料制成的第一微机械功能层，其包括具有第一端和第二端的埋管; 微机械传感器结构，其具有位于第一微机械功能层上方的第二微机械功能层中的盖; 所述第二微机械功能层中的边缘区域使得所述边缘区域围绕所述传感器结构并限定包含所述传感器结构的内侧和远离所述传感器结构的外侧; 使得第一端位于内侧的外侧和第二端。

    Vertical mount package and wafer level packaging therefor
    83.
    发明授权
    Vertical mount package and wafer level packaging therefor 有权
    垂直安装封装和晶圆级封装

    公开(公告)号：US08836132B2

    公开(公告)日：2014-09-16

    申请号：US13438370

    申请日：2012-04-03

    Applicant: Xiaojie Xue

    Inventor： Xiaojie Xue

    IPC: H01L23/48

    CPC classification number: B81B7/0077 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C1/00325 ,  B81C1/00333 ,  B81C1/00873 ,  B81C2203/0118 ,  H01L21/50 ,  H01L23/041 ,  H01L23/49805 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/85 ,  H01L2224/81

    Abstract: Vertical mount packages and methods for making the same are disclosed. A method for manufacturing a vertical mount package includes providing a device substrate with a plurality of device regions on a front surface, and a plurality of through-wafer vias. MEMS devices or integrated circuits are formed or mounted onto the device regions. A capping substrate having recesses is mounted over the device substrate, enclosing the device regions within cavities defined by the recesses. A plurality of aligned through-wafer contacts extend through the capping substrate and the device substrate. The device substrate and capping substrate can be singulated by cutting through the aligned through-wafer contacts, with the severed through-wafer contacts forming vertical mount leads. A vertical mount package includes a device sealed between a device substrate and a capping substrate. At least of the side edges of the package includes exposed conductive elements for vertical mount leads.

    Abstract translation: 公开了垂直安装封装及其制造方法。 一种用于制造垂直安装封装的方法包括：在前表面上提供具有多个器件区域的器件基板，以及多个贯通晶片通孔。 MEMS器件或集成电路形成或安装到器件区域上。 具有凹槽的封盖基板安装在器件基板上，将器件区域包围在由凹槽限定的空腔内。 多个对准的跨晶片触点延伸穿过封盖衬底和器件衬底。 可以通过切割对准的通过晶片的触点来切割器件衬底和封盖衬底，切断的晶片接触件形成垂直安装引线。 垂直安装封装包括密封在器件基板和封盖基板之间的器件。 封装的至少侧边缘包括用于垂直安装引线的露出的导电元件。

    Inertial force sensor
    84.
    发明授权
    Inertial force sensor 有权
    惯性力传感器

    公开(公告)号：US08826734B2

    公开(公告)日：2014-09-09

    申请号：US14027783

    申请日：2013-09-16

    Applicant: Panasonic Corporation

    Inventor： Hideo Ohkoshi ,  Tomohiro Mitani

    IPC: G01P1/02 ,  G01C19/56 ,  B81B7/00 ,  G01P1/00 ,  G01C19/5607 ,  B81C1/00

    CPC classification number: G01P1/003 ,  B81B7/0058 ,  B81B2201/025 ,  B81C1/0023 ,  G01C19/5607 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).

    Abstract translation: 惯性传感器包括用于处理从角速度感测元件（32）提供的信号的振荡型角速度感测元件（32），用于处理信号的电容器（36）的IC（34），以及用于容纳角速度感测 元件（32），IC（34），电容器（36）。 元件（32）和IC（34）经由隔离器（36）容纳在封装（38）中，隔离器由TAB带（46），放置IC（34）的板（40）形成，其中角速度感测元件 32）层叠在IC（34）上，外框架（44）位于板（40）之外并与板（40）分开并且经由布线图案（42）耦合到板（40）。

    Microelectronic Component and Corresponding Production Process
    87.
    发明申请
    Microelectronic Component and Corresponding Production Process 有权
    微电子元件及相应的生产工艺

    公开(公告)号：US20140084349A1

    公开(公告)日：2014-03-27

    申请号：US14032649

    申请日：2013-09-20

    Applicant: Robert Bosch GmbH

    Inventor： Christoph Schelling ,  Ando Feyh

    IPC: H01L29/84 ,  H01L29/66

    CPC classification number: H01L29/84 ,  B81B2201/025 ,  B81C1/00182 ,  G01P15/124 ,  H01L29/66477

    Abstract: A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.

    Abstract translation: 微电子部件包括具有顶侧和反面的半导体衬底，在衬底的顶侧上的可弹性移动的质量装置，设置在质量装置中或其上的至少一个源极区，设置在或 以及悬挂在所述至少一个源极区域上方的导体轨道装置上的栅极区域和至少一个漏极区域，并且通过间隙与所述质量装置间隔开。 导体轨道布置在质量装置的周边中锚定在衬底的顶侧上，使得当质量装置已经移动时，栅极区域保持固定。

    Inertia force sensor
    88.
    发明授权
    Inertia force sensor 有权
    惯性力传感器

    公开(公告)号：US08646332B2

    公开(公告)日：2014-02-11

    申请号：US12673870

    申请日：2008-08-29

    Applicant: Hideo Ohkoshi ,  Tomohiro Mitani

    Inventor： Hideo Ohkoshi ,  Tomohiro Mitani

    IPC: G01C19/56

    CPC classification number: G01P1/003 ,  B81B7/0058 ,  B81B2201/025 ,  B81C1/0023 ,  G01C19/5607 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: An inertial sensor includes oscillating-type angular velocity sensing element, IC for processing signals supplied from angular velocity sensing element, capacitor for processing signals, and package for accommodating angular velocity sensing element, IC, capacitor. Element and IC are housed in package via a vibration isolator, which is formed of TAB tape, plate on which IC is placed, where angular velocity sensing element is layered on IC, and outer frame placed outside and separately from plate and yet coupled to plate via wiring pattern.

    Abstract translation: 惯性传感器包括振荡型角速度感测元件，用于处理从角速度感测元件提供的信号的IC，用于处理信号的电容器和用于容纳角速度感测元件，IC，电容器的封装。 元件和集成电路通过隔离器封装在一起，隔离器由TAB带，IC放置在其上的板形成，其中角速度感测元件层叠在IC上，外框架设置在板外部并与板分离并连接到板 通过布线图案。

    HYBRID INTEGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF
    89.
    发明申请
    HYBRID INTEGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF 有权
    混合集成组件及其制造方法

    公开(公告)号：US20130299924A1

    公开(公告)日：2013-11-14

    申请号：US13890450

    申请日：2013-05-09

    Applicant: Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

    Inventor： Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0021 ,  B81B2201/025 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00261 ,  B81C1/00301 ,  B81C2203/0792 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/00

    Abstract: A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

    Abstract translation: 组件系统包括至少一个MEMS元件，用于MEMS元件的微机械结构的盖以及至少一个ASIC基板。 MEMS元件的微机械结构在SOI晶片的功能层中实现。 MEMS元件面朝下安装，ASIC结构上的结构化功能层，并且帽被实现在SOI晶片的衬底中。 ASIC基板包括在两侧设置有分层结构的起始衬底。 在ASIC基板的MEMS侧分层结构和后侧层叠结构中，每种情况都至少实现一个电路电平。 在ASIC基板中，实现至少一个ASIC接触，其电接触后侧分层结构的至少一个电路电平和/或MEMS侧分层结构的至少一个电路电平。

Patent Agency Ranking