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    Method for manufacturing floating structure of microelectromechanical system
    81.
    发明授权
    Method for manufacturing floating structure of microelectromechanical system 有权
    微机电系统浮动结构制造方法

    公开(公告)号：US07879629B2

    公开(公告)日：2011-02-01

    申请号：US11927810

    申请日：2007-10-30

    Applicant: Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

    Inventor： Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

    IPC: H01L21/00 ,  H01L21/311

    CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

    Abstract translation: 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。

    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER
    83.
    发明申请
    METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 有权
    蚀刻极性硅氧化物层的方法

    公开(公告)号：US20090308843A1

    公开(公告)日：2009-12-17

    申请号：US12375745

    申请日：2007-08-02

    Applicant: Anthony O'Hara

    Inventor： Anthony O'Hara

    IPC: C23F1/02 ,  C03C25/62

    CPC classification number: B81C1/00476 ,  B81C2201/0133

    Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by-product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

    Abstract translation: 描述了释放包含位于基底层和要从氧化硅层释放的层之间的氧化硅层的微结构的控制方法。 该方法包括在具有受控温度和压力条件的处理室中将氧化硅层暴露于氟化氢蒸气的步骤。 该反应的副产物是也用作蚀刻工艺的催化剂的水。 控制这种固有水源的使用，导致仅在氧化物层的暴露表面上形成冷凝流体层，因此进行蚀刻。 所描述的方法因此降低了在蚀刻的微结构内的毛细管诱导的静电的影响和/或微结构和处理室本身内的腐蚀的风险。

    Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films
    84.
    发明授权
    Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films 有权
    用于在具有贵金属膜的MEMS器件的释放蚀刻期间减少电流侵蚀的氧化还原缓冲氢氟酸蚀刻剂

    公开(公告)号：US07597819B1

    公开(公告)日：2009-10-06

    申请号：US11017108

    申请日：2004-12-20

    Applicant: Matthew G. Hankins

    Inventor： Matthew G. Hankins

    IPC: C09K13/00

    CPC classification number: C09K13/08 ,  B81C1/00476 ,  B81C2201/0133 ,  C23F11/04 ,  H01L21/31111

    Abstract: Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

    Abstract translation: 可以在释放蚀刻步骤期间使用包含氧化还原缓冲剂的蚀刻剂溶液，以减少对具有贵金属膜的MEMS器件的结构层的损坏。 优选的氧化还原缓冲液包含可溶性硫代磷酸，酯或盐，其将蚀刻剂溶液的电化学势保持在防止结构材料氧化的水平。 因此，氧化还原缓冲剂优先氧化代替结构材料。 牺牲氧化还原缓冲液因此保护暴露的结构层，同时允许在释放蚀刻期间溶解牺牲氧化物层。

    Surfactant-enhanced protection of micromechanical components from galvanic degradation
    85.
    发明授权
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效
    表面活性剂增强了微机械部件对电流退化的保护

    公开(公告)号：US07560037B2

    公开(公告)日：2009-07-14

    申请号：US11213466

    申请日：2005-08-26

    Applicant: Bevan Staple ,  Jillian Buriak

    Inventor： Bevan Staple ,  Jillian Buriak

    IPC: H01B13/00

    CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。

    MICRONEEDLE STRUCTURES AND CORRESPONDING PRODUCTION METHODS EMPLOYING A BACKSIDE WET ETCH
    86.
    发明申请
    MICRONEEDLE STRUCTURES AND CORRESPONDING PRODUCTION METHODS EMPLOYING A BACKSIDE WET ETCH 审中-公开
    麦克风结构和相应的生产方法

    公开(公告)号：US20090011158A1

    公开(公告)日：2009-01-08

    申请号：US12050209

    申请日：2008-03-18

    Applicant: YEHOSHUA YESHURUN

    Inventor： YEHOSHUA YESHURUN

    IPC: B29D22/00 ,  H01L21/00

    CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C2201/0132 ,  B81C2201/0133 ,  Y10T428/13

    Abstract: A method for forming a hollow microneedle structure includes processing the front side of a wafer to form at least one microneedle projecting from a substrate with a first part of a through-bore, formed by a dry etching process, passing through the microneedle and through a part of a thickness of the substrate. The backside of the wafer is also processed to form a second part of the through-bore by a wet etching process.

    Abstract translation: 一种用于形成中空微针结构的方法包括处理晶片的前侧，以形成至少一个从基底突出的微针，该微针具有通过干蚀刻工艺形成的通孔的第一部分，穿过微针并通过 基板厚度的一部分。 晶片的背面也被处理以通过湿蚀刻工艺形成通孔的第二部分。

    METHOD FOR MANUFACTURING FLOATING STRUCTURE OF MICROELECTROMECHANICAL SYSTEM
    87.
    发明申请
    METHOD FOR MANUFACTURING FLOATING STRUCTURE OF MICROELECTROMECHANICAL SYSTEM 有权
    微电子系统浮动结构的制造方法

    公开(公告)号：US20080233752A1

    公开(公告)日：2008-09-25

    申请号：US11927810

    申请日：2007-10-30

    Applicant: Sang-Choon KO ,  Chi-Hoon JUN ,  Hyeon-Bong PYO ,  Seon-Hee PARK

    Inventor： Sang-Choon KO ,  Chi-Hoon JUN ,  Hyeon-Bong PYO ,  Seon-Hee PARK

    IPC: H01L21/306

    CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

    Abstract translation: 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。

    Surfactant-enhanced protection of micromechanical components from galvanic degradation
    89.
    发明申请
    Surfactant-enhanced protection of micromechanical components from galvanic degradation 失效
    表面活性剂增强了微机械部件对电流退化的保护

    公开(公告)号：US20070289940A1

    公开(公告)日：2007-12-20

    申请号：US11213466

    申请日：2005-08-26

    Applicant: Bevan Staple ,  Jillian Buriak

    Inventor： Bevan Staple ,  Jillian Buriak

    IPC: H01B13/00

    CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

    Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

    Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。

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