中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

266 records (took 0.038 seconds)

    Ultra high precision measurement tool with control loop
    81.
    发明授权
    Ultra high precision measurement tool with control loop 有权
    超高精度测量工具，带控制回路

    公开(公告)号：US07851768B2

    公开(公告)日：2010-12-14

    申请号：US12133147

    申请日：2008-06-04

    Applicant: Juergen Frosien

    Inventor： Juergen Frosien

    IPC: H01J49/10 ,  H01J27/26 ,  H01J27/02

    CPC classification number: H01J37/265 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/244 ,  H01J2237/24507 ,  H01J2237/24535

    Abstract: A focused ion beam device is described comprising a gas field ion source with an emitter emitting an ion beam including ions of gas, an ion beam column and a beam current control loop comprising a beam current measurement device. Furthermore, the focused ion beam device may have a sample charge control comprising measuring the sample charge. A method of operating a focused ion beam device is provided comprising applying a voltage between an emitter an electrode, applying gas to the emitter, emitting ions of a gas from the emitter and controlling a beam current by measuring the beam current with a beam current measurement device.

    Abstract translation: 描述了一种聚焦离子束装置，其包括具有发射包括气体离子的离子束的发射体的气体场离子源，离子束列和包括束电流测量装置的束流控制回路。 此外，聚焦离子束装置可以具有包括测量样品电荷的样品电荷控制。 提供了一种操作聚焦离子束装置的方法，包括在发射极与电极之间施加电压，向发射体施加气体，从发射极发射气体的离子，并通过用束电流测量来测量束电流来控制束电流 设备。

    DUAL MODE GAS FIELD ION SOURCE
    84.
    发明申请
    DUAL MODE GAS FIELD ION SOURCE 有权
    双模气体场源

    公开(公告)号：US20090200484A1

    公开(公告)日：2009-08-13

    申请号：US12366390

    申请日：2009-02-05

    Applicant: Juergen FROSIEN

    Inventor： Juergen FROSIEN

    IPC: H01J3/14

    CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/0827 ,  H01J2237/28 ,  H01J2237/317

    Abstract: A focused ion beam device is described. The focused ion beam device includes an ion beam column including an enclosure for housing a gas field ion source emitter with an emitter area for generating ions, an electrode for extracting ions from the gas field ion source emitter, one or more gas inlets adapted to introduce a first gas and a second gas to the emitter area, an objective lens for focusing the ion beam generated from the first gas or the second gas, a voltage supply for providing a voltage between the electrode and the gas field ion source emitter, and a controller for switching between a first voltage and a second voltage of the voltage supply for generating an ion beam of ions of the first gas or an ion beam of ions of the second gas.

    Abstract translation: 描述了聚焦离子束装置。 聚焦离子束装置包括离子束柱，其包括用于容纳具有用于产生离子的发射极区域的气体场离子源发射器的外壳，用于从气体离子源发射器提取离子的电极，适于引入离子源的一个或多个气体入口 将第一气体和第二气体输送到发射器区域，用于聚焦由第一气体或第二气体产生的离子束的物镜，用于在电极和气体离子源发射器之间提供电压的电压源，以及 控制器，用于在电压源的第一电压和第二电压之间切换，用于产生第一气体的离子离子束或第二气体的离子离子束。

    Gas field ion source, charged particle microscope, and apparatus
    85.
    发明申请
    Gas field ion source, charged particle microscope, and apparatus 有权
    气体离子源，带电粒子显微镜和装置

    公开(公告)号：US20090173888A1

    公开(公告)日：2009-07-09

    申请号：US12318583

    申请日：2008-12-31

    Applicant: Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Takashi OHSHIMA ,  Satoshi TOMIMATSU ,  Tomihiro HASHIZUME ,  Tohru ISHITANI

    Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Takashi OHSHIMA ,  Satoshi TOMIMATSU ,  Tomihiro HASHIZUME ,  Tohru ISHITANI

    IPC: H01J3/14 ,  H01J27/02

    CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

    Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

    Abstract translation: 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

    Single-atom tip and preparation method thereof
    88.
    发明授权
    Single-atom tip and preparation method thereof 有权
    单原子尖端及其制备方法

    公开(公告)号：US07507320B2

    公开(公告)日：2009-03-24

    申请号：US10985717

    申请日：2004-10-09

    Applicant: Ing-Shouh Hwang ,  Hong-Shi Kuo ,  Tien T. Tsong ,  Tsu-Yi Fu

    Inventor： Ing-Shouh Hwang ,  Hong-Shi Kuo ,  Tien T. Tsong ,  Tsu-Yi Fu

    IPC: C25D5/34

    CPC classification number: C25F1/00 ,  C25D3/48 ,  C25D3/50 ,  C25D5/003 ,  C25D5/022 ,  C25D5/38 ,  C25D5/48 ,  C25D5/50 ,  G01Q70/16 ,  H01J9/025 ,  H01J37/073 ,  H01J37/08 ,  H01J2237/06341 ,  H01J2237/0807 ,  Y10T29/49002

    Abstract: This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.

    Abstract translation: 本发明公开了一种用于制备单原子尖端以取代传统真空蒸发方法的电化学方法。 本发明制备单原子尖端的方法包括以下步骤：电化学蚀刻形成尖端的基片单晶金属线。 清洁金属尖端的表面。 在低浓度贵金属电解质中，尖端的顶点上镀有少量贵金属。 在真空中或在惰性气体环境中退火以扩散附加的电镀的贵金属原子，因此在衬底的表面上形成单个原子尖端。 本发明还公开了如此制备的单个原子尖端。 本发明的单个原子尖端在其顶点仅具有非常少数量的原子，通常仅有一个原子。

    GAS FIELD ION SOURCE FOR MULTIPLE APPLICATIONS
    89.
    发明申请
    GAS FIELD ION SOURCE FOR MULTIPLE APPLICATIONS 有权
    用于多种应用的气田离子源

    公开(公告)号：US20080142702A1

    公开(公告)日：2008-06-19

    申请号：US11925609

    申请日：2007-10-26

    Applicant: JUERGEN FROSIEN ,  Dieter Winkler

    Inventor： JUERGEN FROSIEN ,  Dieter Winkler

    IPC: H01J27/02 ,  H01J37/28

    CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/0827 ,  H01J2237/244 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: A focused ion beam device is described. The device includes an ion beam column including an enclosure for housing an emitter with an emitter area for generating ions, a first gas inlet adapted to introduce a first gas to the emitter area, a second gas inlet adapted to introduce a second gas different from the first gas to the emitter area, and a switching unit adapted to switch between introducing the first gas and introducing the second gas.

    Abstract translation: 描述了聚焦离子束装置。 该装置包括离子束柱，其包括用于容纳具有用于产生离子的发射极区域的发射极的外壳，适于将第一气体引入发射极区域的第一气体入口，适于引入不同于第二气体的第二气体的第二气体入口 第一气体到发射极区域，以及开关单元，其适于在引入第一气体和引入第二气体之间切换。

Patent Agency Ranking