公开(公告)号：US07712436B2

公开(公告)日：2010-05-11

申请号：US12025996

申请日：2008-02-05

Applicant: Yohei Yamazawa

Inventor： Yohei Yamazawa

IPC: C23C16/00 ,  C23F1/02

CPC classification number: H01J37/32091 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67098

Abstract: A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors.

Abstract translation: 等离子体处理装置包括用于输出第一高频的第一高频电力，电连接到设置在可减压处理室内的第一电极; 加热器电源，其通过用于降低第一高频噪声的滤波电路与连接在第一电极上的加热元件电连接。 等离子体处理装置还包括当从加热元件观察时设置在滤波器电路的初级中的空芯初级电感器; 以及用于围绕或容纳主电感器的接地导电壳体。

公开(公告)号：US20100003827A1

公开(公告)日：2010-01-07

申请号：US12373394

申请日：2007-07-12

Applicant: Wilhelmus Mathijs Marie Kessels ,  Mauritius Cornelis Van De Sanden ,  Michiel Alexander Blauw ,  Freddy Roozeboom

Inventor： Wilhelmus Mathijs Marie Kessels ,  Mauritius Cornelis Van De Sanden ,  Michiel Alexander Blauw ,  Freddy Roozeboom

IPC: H01L21/3065 ,  B44C1/22

CPC classification number: H01J37/32357 ,  C23C16/402 ,  C23C16/513 ,  H01J37/32055 ,  H01J2237/2001 ,  H01J2237/3343 ,  H01L21/30655

Abstract: In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation. An alternating bias voltage is applied between the substrate and the plasma during the exposure

Abstract translation: 在用于通过等离子体蚀刻衬底的方法和装置中，在至少一个导电级联板的系统的通道中的等离子体源（1）的阴极和阳极之间的基本上亚大气压下产生等离子体并加速 在阴极和阳极之间。 等离子体从等离子体源释放到其中衬底（9）暴露于等离子体的处理室（2）中。 处理室在操作期间维持在减小的接近真空压力。 在曝光期间，在衬底和等离子体之间施加交替的偏置电压

公开(公告)号：US20090317964A1

公开(公告)日：2009-12-24

申请号：US12487444

申请日：2009-06-18

Applicant: David E. SUURONEN ,  Dale K. Stone ,  Shigeo Oshiro ,  Arthur P. Riaf ,  Edward D. MacIntosh

Inventor： David E. SUURONEN ,  Dale K. Stone ,  Shigeo Oshiro ,  Arthur P. Riaf ,  Edward D. MacIntosh

IPC: H01L21/265 ,  F28D15/00

CPC classification number: H01L21/67109 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01L21/6875

Abstract: Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Abstract translation: 公开了用于减少衬底上的颗粒污染的技术。 在一个特定的示例性实施例中，该技术可以利用具有不同区域的压板来实现，其中区域中的压力水平可以基本相等。 例如，压盘可以包括压板本体，该压板本体包括第一和第二凹槽，第一凹槽限定用于保持流体的流体区域，以将衬底的温度保持在期望温度，第二凹槽限定用于保持接地电路的第一腔体 ; 第一通孔限定在压板本体中，第一通孔具有第一和第二开口，第一开口靠近流体区域，第二开口接近第一腔体，其中流体区域的压力水平可以保持在 基本上等于第一腔的压力水平。

公开(公告)号：US07619179B2

公开(公告)日：2009-11-17

申请号：US11565179

申请日：2006-11-30

Applicant: Daisuke Hayashi

Inventor： Daisuke Hayashi

IPC: B23K10/00

CPC classification number: H01J37/32559 ,  H01J37/32009 ,  H01J2237/2001

Abstract: In an electrode for generating a plasma, disposed to face a surface of a substrate to perform a plasma processing on the surface of the substrate, the electrode includes a metal-based composite material formed by impregnating a metal into a base member made of a porous ceramic, and having a joint surface at least facing toward the entire surface of the substrate. The electrode also includes a conductive plate made of a plasma-resistant material melt-bonded by a metal to the joint surface of the metal-based composite material.

Abstract translation: 在用于产生等离子体的电极中，设置成面对衬底的表面以在衬底的表面上执行等离子体处理，所述电极包括通过将金属浸渍到由多孔的基底构成的基底构件中形成的金属基复合材料 陶瓷，并且具有至少面向基板的整个表面的接合表面。 电极还包括由金属熔融粘合到金属基复合材料的接合表面的等离子体材料制成的导电板。

公开(公告)号：US20090267122A1

公开(公告)日：2009-10-29

申请号：US12385868

申请日：2009-04-22

Applicant: Tadahiro Ohmi ,  Ichiro Takahashi

Inventor： Tadahiro Ohmi ,  Ichiro Takahashi

IPC: H01L29/51 ,  H01L21/28

CPC classification number: H01L21/02192 ,  C23C14/024 ,  C23C14/08 ,  C23C14/5826 ,  H01G7/06 ,  H01J37/32192 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02356 ,  H01L21/31691 ,  H01L28/55 ,  H01L29/40111 ,  H01L29/78391

Abstract: A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode.

Abstract translation: 半导体器件具有衬底，绝缘体，氧化钇膜，铁电体膜（STN膜）和上电极。

公开(公告)号：US20090233383A1

公开(公告)日：2009-09-17

申请号：US11884924

申请日：2006-02-14

Applicant: Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

Inventor： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC: H01L21/66 ,  B05C11/00

CPC classification number: H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

Abstract: It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

Abstract translation: 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20090232981A1

公开(公告)日：2009-09-17

申请号：US12181516

申请日：2008-07-29

Applicant: Julian G. BLAKE ,  Paul J. Murphy

Inventor： Julian G. BLAKE ,  Paul J. Murphy

IPC: B05D5/00

CPC classification number: H01L21/76254 ,  H01J2237/2001 ,  H01J2237/31701

Abstract: A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between −150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

Abstract translation: 植入衬底以在衬底中形成微泡层。 在一些实施方案中，该物质可以是氢或氦。 微泡在基底内稳定的尺寸受到控制。 在一个实例中，这是通过冷却衬底。 在一个实施方案中，将基底冷却至约-150℃至30℃。该冷却还可以减少物质在基底中的扩散，并且当沿着微泡层切割基底时将降低表面粗糙度。

公开(公告)号：US07531797B2

公开(公告)日：2009-05-12

申请号：US12029766

申请日：2008-02-12

Applicant: Taiko Motoi

Inventor： Taiko Motoi

IPC: H01J37/08

CPC classification number: H01J37/20 ,  G01N1/32 ,  G01N23/2255 ,  G01N2035/00415 ,  H01J37/3056 ,  H01J2237/2001 ,  H01J2237/31749

Abstract: A sample processing apparatus includes a stage for supporting a sample, a first temperature controller for controlling a temperature of the sample, an ion beam generator for irradiating the sample with an ion beam, and a detector for detecting a signal emitted from the sample in response to the irradiation of the ion beam. Also provided is a probe for obtaining a part of the sample processed by the irradiation of the ion beam and conveying it to a sample table, a second temperature controller for controlling a temperature of the probe, and a third temperature controller for controlling a temperature of the sample table.

Abstract translation: 样品处理装置包括用于支撑样品的台，用于控制样品温度的第一温度控制器，用离子束照射样品的离子束发生器和用于检测从样品发射的信号的检测器 对离子束的照射。 还提供了一种用于获得通过照射离子束并将其传送到样品台的样品的一部分的探针，用于控制探针的温度的第二温度控制器和用于控制探针的温度的第三温度控制器 样品表。

公开(公告)号：US20090111280A1

公开(公告)日：2009-04-30

申请号：US12328466

申请日：2008-12-04

Applicant: Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

Inventor： Chien-Teh Kao ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

IPC: H01L21/31

CPC classification number: H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Abstract translation: 提供了从衬底表面去除天然氧化物的方法。 在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜 并将衬底保持在低于65℃的温度下，将衬底加热到​​至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层 。

公开(公告)号：US20090101284A1

公开(公告)日：2009-04-23

申请号：US12076855

申请日：2008-03-24

Applicant: Masakazu Higuma ,  Shlnji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

Inventor： Masakazu Higuma ,  Shlnji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01L21/6831 ,  H01J37/32532 ,  H01J2237/2001

Abstract: An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

Abstract translation: 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏，包括导电材料即用于产生等离子体的电极，用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件，用于吸收存在于等离子体中的离子，或者用于两者; 设置在所述导电构件的顶面上的电介质层，具有相对于彼此不同厚度的中心部分和周边部分，并且适于提供在所述基板上的平面中的高频电场强度的均匀性， 被处理 和用于静电卡盘的电极膜，设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构，可以控制由于温度变化而施加在静电卡盘上的应力。