公开(公告)号：US09583313B2

公开(公告)日：2017-02-28

申请号：US14301450

申请日：2014-06-11

Applicant: Panasonic Corporation

Inventor： Tomohiro Okumura

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32119 ,  H01J37/32935

Abstract: The plasma processing apparatus includes a dielectric member for defining a chamber, a gas introducing part for introducing a gas into the chamber, a discharge coil disposed on one side of the dielectric member and supplied with AC power to generate a plasma in the chamber into which the gas has been introduced, a conductor member disposed on the other side of the dielectric member and facing the discharge coil with the chamber of the dielectric member interposed therebetween, an AC power source for supplying AC voltage to the discharge coil, an opening communicating with the chamber and serving for applying the plasma to a substrate to be processed, and a moving mechanism for moving the substrate relative to the chamber so that the substrate passes across a front of the opening. The discharge coil is grounded or connected to the conductor member via a voltage generating capacitor or a voltage generating coil.

Abstract translation: 等离子体处理装置包括用于限定腔室的电介质构件，用于将气体引入腔室的气体引入部件，设置在电介质构件的一侧上并且供给AC电力以在腔室中产生等离子体的放电线圈， 已经引入了气体，导体部件设置在电介质部件的另一侧并面对放电线圈，电介质部件的室插入其间，用于向放电线圈提供AC电压的AC电源，与 所述室并用于将等离子体施加到待处理的基板;以及移动机构，用于相对于所述室移动所述基板，使得所述基板穿过所述开口的前部。 放电线圈经由电压产生电容器或电压产生线圈接地或连接到导体部件。

公开(公告)号：US20170054073A1

公开(公告)日：2017-02-23

申请号：US15243689

申请日：2016-08-22

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Patrick Quarterman ,  Jianxin Zhu

IPC: H01L43/12 ,  H01J37/32 ,  H01L43/10

CPC classification number: H01J37/3244 ,  H01F41/308 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/82 ,  H01L43/08

Abstract: In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.

Abstract translation: 在一些实例中，包括在衬底上沉积功能层的方法; 在所述功能层上沉积颗粒层，所述颗粒层包括限定由限定所述多个颗粒的晶界的第二材料分开的多个晶粒的第一材料; 从所述颗粒层中除去所述第二材料，使得所述颗粒层的所述多个颗粒在所述功能层上限定硬掩模层; 并且通过用载气的反应离子蚀刻除去未被硬掩模层掩蔽的功能层的部分，其中载气包括原子序数小于氩原子数的气体。

公开(公告)号：US20170047235A1

公开(公告)日：2017-02-16

申请号：US15180877

申请日：2016-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Hakyoung Kim

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/3244 ,  H01L21/3065

Abstract: A cover plate, a plasma treatment system, and a plasma treatment method therewith are disclosed. The plasma treatment system may include a window, an antenna electrode disposed on the window, and a cover plate disposed between the antenna electrode and the window to cover top and side surfaces of the window.

Abstract translation: 公开了一种盖板，等离子体处理系统及其等离子体处理方法。 等离子体处理系统可以包括窗口，设置在窗户上的天线电极以及设置在天线电极和窗户之间以覆盖窗口的顶部和侧面的盖板。

公开(公告)号：US09570273B2

公开(公告)日：2017-02-14

申请号：US14685080

申请日：2015-04-13

Applicant: Plasmology4, Inc.

Inventor： Gregory A. Watson ,  Robert M. Hummel ,  Marc C. Jacofsky ,  David J. Jacofsky

IPC: H01J37/32 ,  A61M16/06 ,  A61M16/12 ,  A61M15/02 ,  A61N1/44 ,  H05H1/24 ,  A61N1/40 ,  A61L2/00 ,  H05H1/46 ,  A61L2/14

CPC classification number: H05H1/46 ,  A61L2/00 ,  A61L2/0011 ,  A61L2/0094 ,  A61L2/14 ,  A61L2202/11 ,  A61M15/02 ,  A61M16/06 ,  A61M16/12 ,  A61M2202/0208 ,  A61M2202/025 ,  A61N1/40 ,  A61N1/44 ,  H01J37/321 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/3266 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/466 ,  H05H2001/4682 ,  H05H2240/20 ,  H05H2245/1225 ,  H05H2277/10

Abstract: A compact cold plasma device for generating cold plasma having temperatures in the range 65 to 120 degrees Fahrenheit. The compact cold plasma device has a magnet-free configuration and an induction-grid-free configuration. An additional configuration uses an induction grid in place of the input electrode to generate the cold plasma. A high voltage power supply is provided that includes a controllable switch to release energy from a capacitor bank to a dual resonance RF transformer. A controller adjusts the energy input to the capacitor bank, as well as the trigger to the controllable switch.

Abstract translation: 一种用于产生温度在65至120华氏度范围内的冷等离子体的紧凑型冷等离子体装置。 紧凑型冷等离子体器件具有无磁体配置和无感电网格配置。 附加配置使用感应电网代替输入电极以产生冷等离子体。 提供了一种高压电源，其包括可控开关以将能量从电容器组释放到双谐振RF变压器。 控制器调节电容器组的能量输入以及可控开关的触发。

公开(公告)号：US20170040174A1

公开(公告)日：2017-02-09

申请号：US14863331

申请日：2015-09-23

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32422 ,  H01L21/67069

Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

Abstract translation: 描述了用于反向脉冲的系统和方法。 方法之一包括接收具有第一状态和第二状态的数字信号。 该方法还包括当数字信号处于第一状态时产生具有高状态的变压器耦合等离子体（TCP）射频（RF）脉冲信号，并且当数字信号处于第二状态时具有低状态。 该方法包括将TCP RF脉冲信号提供给等离子体室的一个或多个线圈，当数字信号处于第一状态时产生具有低状态的偏置RF脉冲信号，并且当数字信号处于 并且将偏压RF脉冲信号提供给等离子体室的卡盘。

公开(公告)号：US20170011891A1

公开(公告)日：2017-01-12

申请号：US15276423

申请日：2016-09-26

Applicant: Applied Materials, Inc.

Inventor： Edward P. HAMMOND, IV ,  Jing ZOU ,  Rodolfo P. BELEN ,  Meihua SHEN ,  Nicolas GANI ,  Andrew NGUYEN ,  David PALAGASHVILI ,  Michael D. WILLWERTH

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68735

Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

Abstract translation: 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。

公开(公告)号：US09502759B2

公开(公告)日：2016-11-22

申请号：US14566133

申请日：2014-12-10

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Shiro Ninomiya ,  Masateru Sato

IPC: H01Q1/26 ,  H01Q1/40 ,  H05H1/46 ,  H01J37/32 ,  H01Q1/42 ,  H01Q7/00

CPC classification number: H01Q1/40 ,  H01J37/321 ,  H01J37/3211 ,  H01Q1/42 ,  H01Q1/421 ,  H01Q7/00 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

Abstract: An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.

Abstract translation: 提供了一种天线罩，其保护设置在等离子体室中的天线的表面并激发高频电场到等离子体室的内部。 在天线罩中，根据天线的表面位置，与天线表面正交的方向中的至少一个方向的天线罩的厚度不同，使得天线的外表面上的电位的空间依赖性 覆盖减少。 在天线罩中，沿着天线的延伸方向可以改变至少一个方向的厚度。

公开(公告)号：US20160322205A1

公开(公告)日：2016-11-03

申请号：US15207495

申请日：2016-07-11

Applicant: Advanced Micro-Fabrication Equipment Inc, Shanghai

Inventor： Songlin XU ,  Gang SHI ,  Tuqiang NI

IPC: H01J37/32 ,  H01L21/31 ,  H01L21/3065

CPC classification number: H01J37/32633 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31

Abstract: An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.

Abstract translation: ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部并且位于基板支撑件上方但位于多个气体注入器下方，以便重新定向处理气体的流动。

公开(公告)号：US20160300697A1

公开(公告)日：2016-10-13

申请号：US15100388

申请日：2014-11-28

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Ki Woong Whang ,  Hee Woon Cheong

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3266 ,  H01J37/32669

Abstract: A plasma processing device capable of plasma shaping through magnetic field control includes: a vacuum chamber having an inner space on which a substrate is mounted; an antenna positioned on the upper portion of the chamber and generating plasma in the inner space of the chamber; a magnetic field generation unit including a first magnetic field generation unit disposed on the lower portion of the chamber and including one or more electromagnetic coils and a second magnetic field generation unit including one or more electromagnetic coils disposed on the side of the chamber; and a control unit controlling current input into the electromagnetic coils of the magnetic field generation unit.

Abstract translation: 能够通过磁场控制进行等离子体成形的等离子体处理装置包括：真空室，其具有安装有基板的内部空间; 定位在所述腔室的上部并且在所述腔室的内部空间中产生等离子体的天线; 磁场产生单元，其包括设置在所述室的下部并且包括一个或多个电磁线圈的第一磁场产生单元和包括设置在所述室侧的一个或多个电磁线圈的第二磁场产生单元; 以及控制单元，控制电流输入到磁场产生单元的电磁线圈中。

公开(公告)号：US20160300696A1

公开(公告)日：2016-10-13

申请号：US15092625

申请日：2016-04-07

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

Abstract translation: 这里公开了通过将一个或多个增压室附接到主放电室来提高等离子体放电效率的方法。 增压室用作主放电室的等离子体放电放大装置。 它显着提高血浆密度，特别是在低于50mTorr的压力下。 与传统的电感耦合等离子体（ICP）源相比，增压室等离子体源的强度在低压条件下提高了数倍。 增压室也可以用作小样品的方便的高速等离子体蚀刻和沉积处理室。 通过测量等离子体发射强度来测量等离子体强度的方法也在本申请中公开。