公开(公告)号：US06768120B2

公开(公告)日：2004-07-27

申请号：US10232502

申请日：2002-08-30

Applicant: Ka-Ngo Leung ,  Jani Reijonen ,  Arun Persaud ,  Qing Ji ,  Ximan Jiang

Inventor： Ka-Ngo Leung ,  Jani Reijonen ,  Arun Persaud ,  Qing Ji ,  Ximan Jiang

IPC: H01J2700

CPC classification number: H01J37/08 ,  H01J27/18 ,  H01J37/077

Abstract: An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.

Abstract translation: 电子束系统基于具有加速器柱的等离子体离子源中的等离子体发生器。 电子从等离子体离子源中的等离子体阴极中提取出来。 多级等离子体离子源。 可以在x和y方向上扫描光束，并且系统可以用多个子束进行操作。 紧凑的聚焦离子或电子束系统具有等离子体离子源和全静电束加速度和聚焦柱。 离子源是具有通过射频（RF）感应放电产生的等离子体的小室。 RF天线缠绕在室外，并连接到RF电源。 可以从源中提取离子或电子。 多光束系统具有不同物种的几种来源和电子束源。

公开(公告)号：US20170294290A1

公开(公告)日：2017-10-12

申请号：US15596937

申请日：2017-05-16

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

公开(公告)号：US09997335B2

公开(公告)日：2018-06-12

申请号：US15596937

申请日：2017-05-16

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

公开(公告)号：US09691592B2

公开(公告)日：2017-06-27

申请号：US15092625

申请日：2016-04-07

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

公开(公告)号：US20160300696A1

公开(公告)日：2016-10-13

申请号：US15092625

申请日：2016-04-07

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

Abstract translation: 这里公开了通过将一个或多个增压室附接到主放电室来提高等离子体放电效率的方法。 增压室用作主放电室的等离子体放电放大装置。 它显着提高血浆密度，特别是在低于50mTorr的压力下。 与传统的电感耦合等离子体（ICP）源相比，增压室等离子体源的强度在低压条件下提高了数倍。 增压室也可以用作小样品的方便的高速等离子体蚀刻和沉积处理室。 通过测量等离子体发射强度来测量等离子体强度的方法也在本申请中公开。

公开(公告)号：US08723115B2

公开(公告)日：2014-05-13

申请号：US13431659

申请日：2012-03-27

Applicant: Hong Xiao ,  Ximan Jiang

Inventor： Hong Xiao ,  Ximan Jiang

IPC: G01N23/00

CPC classification number: G01N23/2251 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2804 ,  H01J2237/2817

Abstract: One embodiment relates to a method of detecting a buried defect in a target microscopic metal feature. An imaging apparatus is configured to impinge charged particles with a landing energy such that the charged particles, on average, reach a depth within the target microscopic metal feature. In addition, the imaging apparatus is configured to filter out secondary electrons and detect backscattered electrons. The imaging apparatus is then operated to collect the backscattered electrons emitted from the target microscopic metal feature due to impingement of the charged particles. A backscattered electron (BSE) image of the target microscopic metal feature is compared with the BSE image of a reference microscopic metal feature to detect and classify the buried defect. Other embodiments, aspects and features are also disclosed.

Abstract translation: 一个实施例涉及一种检测目标微观金属特征中的埋入缺陷的方法。 成像装置被配置为以带有电荷的颗粒撞击着陆能量，使得带电粒子平均达到目标微观金属特征内的深度。 此外，成像装置被配置为滤除二次电子并检测反向散射电子。 然后操作成像装置以收集由于带电粒子的撞击而从目标微观金属特征发射的背散射电子。 将目标微观金属特征的背散射电子（BSE）图像与参考微观金属特征的BSE图像进行比较，以检测和分类埋藏缺陷。 还公开了其它实施例，方面和特征。

公开(公告)号：US07609815B2

公开(公告)日：2009-10-27

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William A. Barletta ,  Ximan Jiang ,  Lili Ji

IPC: H01J35/06

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。

公开(公告)号：US20080049888A1

公开(公告)日：2008-02-28

申请号：US11757137

申请日：2007-06-01

Applicant: Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

Inventor： Ka-Ngo Leung ,  Qing Ji ,  William Barletta ,  Ximan Jiang ,  Lili Ji

IPC: G21K1/02 ,  G01N23/203 ,  H01J37/08

CPC classification number: G01N23/203 ,  B82Y10/00 ,  B82Y40/00 ,  G01V5/0008 ,  H01J3/025 ,  H01J3/04 ,  H01J27/024 ,  H01J35/00 ,  H01J37/045 ,  H01J37/077 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2235/06 ,  H01J2235/068 ,  H01J2237/0435 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/06375 ,  H01J2237/3171

Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Abstract translation: 公开了用于将子束可控地引导到目标衬底的技术。 子束可以是正离子或电子。 已经表明，可以制造直径为1um的子束，孔径间隔为12μm。 这种子束的阵列可用于无掩模光刻。 通过子束相对于目标衬底的逐步运动，各个器件可以被直接电子束写入。 离子束也可以直接写入。 由于从多焦源提取的子束的高亮度，认为光刻曝光的曝光时间被最小化。 或者，子束可以是撞击高Z材料用于X射线产生的电子，然后准直以提供图案化的X射线曝光，例如在CAT扫描中使用的那些。 这种装置可用于远程检测炸药。