公开(公告)号：US08281738B2

公开(公告)日：2012-10-09

申请号：US11886526

申请日：2006-03-22

Applicant: Andrew Stephen Devaney ,  Richard David Goldberg ,  Christopher Burgess ,  David George Armour ,  David Kirkwood

Inventor： Andrew Stephen Devaney ,  Richard David Goldberg ,  Christopher Burgess ,  David George Armour ,  David Kirkwood

IPC: H01J27/02

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract translation: 本发明涉及包括适于离子注入机（10）的阴极（20）和反向阴极（44）的离子源（14）。 通常，离子源保持在真空下并使用在电弧室（16）内产生的等离子体产生离子。 从电弧室中提取等离子体离子，随后将其注入到半导体晶片（12）中。 根据本发明的离子源还包括布置成将电子发射到电弧室中的阴极（40） 位于电弧室中的电极（44），使得由阴极发射的电子入射到其上; 布置成偏置电极的一个或多个电压电位源（76） 以及电压电位调节器（82），其可操作以在电极之间切换偏置电极的电压电位，从而充当阳极，并且电压电位源负极偏置电极，用作反向阴极。

公开(公告)号：US20090211896A1

公开(公告)日：2009-08-27

申请号：US11886526

申请日：2006-03-22

Applicant: Andrew Stephen Devaney ,  Richard David Goldberg ,  Christopher Burgess ,  David George Armour ,  David Kirkwood

Inventor： Andrew Stephen Devaney ,  Richard David Goldberg ,  Christopher Burgess ,  David George Armour ,  David Kirkwood

IPC: C23C14/46

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract translation: 本发明涉及包括适于离子注入机（10）的阴极（20）和反向阴极（44）的离子源（14）。 通常，离子源保持在真空下并使用在电弧室（16）内产生的等离子体产生离子。 从电弧室中提取等离子体离子，随后将其注入到半导体晶片（12）中。 根据本发明的离子源还包括布置成将电子发射到电弧室中的阴极（40） 位于电弧室中的电极（44），使得由阴极发射的电子入射到其上; 布置成偏置电极的一个或多个电压电位源（76） 以及电压电位调节器（82），其可操作以在电极之间切换偏置电极的电压电位，从而充当阳极，并且电压电位源负极偏置电极，用作反向阴极。

公开(公告)号：US07145157B2

公开(公告)日：2006-12-05

申请号：US10688076

申请日：2003-10-17

Applicant: Jonathon Y. Simmons ,  John R. Shelley ,  Andrew Stephen Devaney

Inventor： Jonathon Y. Simmons ,  John R. Shelley ,  Andrew Stephen Devaney

IPC: G21K5/10

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/023 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/061

Abstract: A kinematic electrode mount is provided for an ion implanter in which an electrode insert member having an electrode body portion which defines an aperture, is inserted into an electrode support frame. In one embodiment, a first kinematic alignment pin of the insert member engages a first, groove-shaped kinematic alignment surface of the electrode support frame to align the first alignment pin in two orthogonal directions relative to the electrode support frame. In addition, a second kinematic alignment pin of the insert member engages a second kinematic alignment surface of the electrode support frame to align the insert member in a rotational orientation relative to the electrode support frame. A plurality of flanges of the insert member engage the electrode support frame to retain the insert member in the aligned position and to electrically couple the electrode insert member to the electrode support frame. A spring positioned between the electrode insert member and the electrode support frame biases the electrode insert member in the aligned and retained position relative to the electrode support frame. In another embodiment, the electrode support frame has alignment pins and the insert member has alignment slots.

Abstract translation: 提供了一种用于离子注入机的运动电极座，其中具有限定孔的电极主体部分的电极插入件被插入到电极支撑框架中。 在一个实施例中，插入构件的第一运动学对准销接合电极支撑框架的第一槽形运动学对准表面，以使第一对准销相对于电极支撑框架在两个正交方向上对齐。 此外，插入构件的第二运动学对准销接合电极支撑框架的第二运动学对准表面，以使插入构件相对于电极支撑框架以旋转取向对准。 插入构件的多个凸缘接合电极支撑框架以将插入构件保持在对准位置并且将电极插入构件电耦合到电极支撑框架。 位于电极插入构件和电极支撑框架之间的弹簧将电极插入构件相对于电极支撑框架偏置在对准和保持位置。 在另一个实施例中，电极支撑框架具有对准销，插入件具有对准槽。

公开(公告)号：US5886355A

公开(公告)日：1999-03-23

申请号：US700268

申请日：1996-08-20

Applicant: Nicholas Bright ,  Paul Anthony Burfield ,  John Pontefract ,  Bernard Francis Harrison ,  Peter Meares ,  David R. Burgin ,  Andrew Stephen Devaney ,  Peter Torin Kindersley

Inventor： Nicholas Bright ,  Paul Anthony Burfield ,  John Pontefract ,  Bernard Francis Harrison ,  Peter Meares ,  David R. Burgin ,  Andrew Stephen Devaney ,  Peter Torin Kindersley

IPC: H01J27/02 ,  H01J27/08 ,  H01J27/18 ,  H01J27/00

CPC classification number: H01J27/18 ,  H01J27/022 ,  H01J27/08 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

Abstract translation: 离子注入设备被修改，以便为电弧室内的灯丝提供灯丝反射器，并且去除电弧室外的灯丝的电绝缘体并提供屏蔽装置，从而减少导电层的形成 表示绝缘子，大大延长了使用寿命，减少了设备停机时间。 通过用于电弧室的可更换衬垫进一步提高了设备​​的效率，从而提高了电弧室的壁温，从而提高了电子温度。 通过使电弧室本身或其部分的钨，特别是具有用于离子束的出射孔的前板或通过在其中插入可移除的钨衬垫而获得的钨部件的使用减少了 离子束。 电弧室的可维护性通过单独夹紧来改善，该夹具分别夹住灯丝和灯丝反射器。 该夹具还可以有利地由钨制成。