公开(公告)号：US20190221427A1

公开(公告)日：2019-07-18

申请号：US16226862

申请日：2018-12-20

Applicant: Applied Materials, Inc.

Inventor： Hansel LO ,  Christopher S. OLSEN ,  Eric Kihara SHONO ,  Johanes S. SWENBERG ,  Erika HANSEN ,  Taewan KIM ,  Lara HAWRYLCHAK

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/02252 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02236 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/311

Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.

公开(公告)号：US20180076026A1

公开(公告)日：2018-03-15

申请号：US15417969

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Taewan KIM

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29

CPC classification number: H01L21/02252 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02326 ,  H01L23/291 ,  H01L23/3192

Abstract: A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.

公开(公告)号：US20190228942A1

公开(公告)日：2019-07-25

申请号：US16248384

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01J37/20 ,  H01L21/67

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20160099167A1

公开(公告)日：2016-04-07

申请号：US14505731

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Taewan KIM ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/764 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02312 ,  H01L21/7682 ,  H01L21/76885 ,  H01L2221/1047

Abstract: Methods for reducing the k value of a layer using air gaps and devices produced by said methods are disclosed herein. Methods disclosed herein can include depositing a carbon containing stack over one or more features in a substrate, depositing a porous dielectric layer over the carbon containing stack, and curing the substrate to volatilize the carbon containing stack. The resulting device includes a substrate with one or more features formed therein, a porous dielectric layer formed over the features with an air gap formed in the features.

Abstract translation: 本文公开了使用气隙降低层的k值的方法和由所述方法制造的装置。 本文公开的方法可以包括在衬底中的一个或多个特征上沉积含碳堆叠，在含碳堆叠之上沉积多孔介电层，以及固化衬底以使含碳堆叠挥发。 所得到的器件包括其中形成有一个或多个特征的衬底，在特征上形成的多孔介电层，其中形成有特征中的气隙。

公开(公告)号：US20230407471A1

公开(公告)日：2023-12-21

申请号：US18205415

申请日：2023-06-02

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Tobin KAUFMAN-OSBORN ,  Taewan KIM ,  Hansel LO

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  C23C16/45548 ,  C23C16/45536 ,  B01F23/19 ,  B01F25/421 ,  C23C16/45561 ,  H01J37/3244 ,  B01F23/10 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F35/511 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US20160111373A1

公开(公告)日：2016-04-21

申请号：US14850069

申请日：2015-09-10

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kang Sub YIM ,  Cheng PAN ,  Sure NGO ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L23/53295 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Abstract translation: 本公开的实施例通常提供耐等离子体损伤的多层电介质堆叠配置。 公开了用于在本体低介电常数层上沉积薄保护性低介电常数层以产生层堆叠的方法。 结果，等离子体处理期间和之后多层堆叠的介电常数不变。

公开(公告)号：US20210074505A1

公开(公告)日：2021-03-11

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20200227256A1

公开(公告)日：2020-07-16

申请号：US16836351

申请日：2020-03-31

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Taewan KIM

IPC: H01L21/02 ,  H01L23/29 ,  H01L23/31

Abstract: A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating conformal radical oxidation of high aspect ratio structures of the substrate comprising: heating the substrate; and exposing the substrate to steam; and conformally oxidizing the substrate. A semiconductor device includes a silicon and nitrogen containing layer; a feature formed in the silicon and nitrogen containing layer having an aspect ratio of at least 40:1; and an oxide layer on the face of the feature having a thickness in a bottom region of the silicon and nitrogen containing layer that is at least 95% of a thickness of the oxide layer in a top region.

公开(公告)号：US20200251331A1

公开(公告)日：2020-08-06

申请号：US16849713

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Hansel LO ,  Christopher S. OLSEN ,  Eric Kihara SHONO ,  Johanes S. SWENBERG ,  Erika HANSEN ,  Taewan KIM ,  Lara HAWRYLCHAK

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.

公开(公告)号：US20150284849A1

公开(公告)日：2015-10-08

申请号：US14657627

申请日：2015-03-13

Applicant: Applied Materials, Inc.

Inventor： Kang Sub YIM ,  Taewan KIM ,  Alexandros T. DEMOS

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/50 ,  C23C16/26

CPC classification number: C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68792

Abstract: Methods for making a low k porous dielectric film with improved mechanical strength are disclosed herein. A method of forming a dielectric layer can include delivering a deposition gas to a substrate in a processing chamber, the deposition gas comprising an acrylate precursor with a UV active side group and an oxygen containing precursor; activating the deposition gas to deposit an uncured carbon-containing layer on a surface of the substrate; and delivering UV radiation to the uncured carbon-containing layer to create a cured carbon-containing layer, the UV active side group crosslinking with a second group.

Abstract translation: 本文公开了制造具有改善的机械强度的低k多孔介电膜的方法。 形成电介质层的方法可以包括将沉积气体输送到处理室中的衬底，沉积气体包含具有UV活性侧基团和含氧前体的丙烯酸酯前体; 激活沉积气体以在基板的表面上沉积未固化的含碳层; 并向未固化的含碳层递送UV辐射以产生固化的含碳层，所述UV活性侧基与第二基团交联。