公开(公告)号：US20240018648A1

公开(公告)日：2024-01-18

申请号：US18220408

申请日：2023-07-11

Applicant: Applied Materials, Inc.

Inventor： Geraldine VASQUEZ ,  Yi XU ,  Dien-yeh WU ,  Aixi ZHANG ,  Jallepally RAVI ,  Yu LEI

IPC: C23C16/44 ,  H01J37/32 ,  C23C16/458

CPC classification number: C23C16/4408 ,  H01J37/32798 ,  C23C16/4586 ,  H01J2237/3321

Abstract: Embodiments of a purge ring for use in a process chamber are provided herein. In some embodiments, a purge ring includes: an annular body having an inner portion and an outer portion, wherein the inner portion includes an inner surface of the annular body, the inner surface comprising a first inner sidewall, a second inner sidewall, and a third inner sidewall, wherein the inner portion has an upper inner notch that defines the first inner sidewall and a lower inner notch that defines the second inner sidewall, wherein a third inner sidewall is disposed between the first inner sidewall and the second inner sidewall, and wherein the first inner sidewall and the second inner sidewall are disposed radially outward of the third inner sidewall.

公开(公告)号：US20240191354A1

公开(公告)日：2024-06-13

申请号：US18078841

申请日：2022-12-09

Applicant: Applied Materials, Inc.

Inventor： Ying-Bing JIANG ,  Joung Joo LEE ,  Xianmin TANG ,  Jiang LU ,  Avgerinos V. GELATOS ,  Dien-yeh WU ,  Weifeng YE ,  Yiyang WAN ,  Gary HOW ,  Joseph HERNANDEZ

IPC: C23C16/455 ,  C23C16/42 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/42 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/321 ,  H01J2237/3321

Abstract: Methods of depositing a metal silicide on a substrate are provided herein. In some embodiments, a method of depositing a metal silicide on a substrate having a silicon containing surface includes: creating a plasma comprising a first gas in a plasma region in a chemical vapor deposition (CVD) chamber, wherein the plasma region is disposed between a lid heater and a showerhead; flowing the first gas through a plurality of first openings of the showerhead to an activation region in the CVD chamber disposed between the showerhead and the substrate; flowing a second gas comprising a metal precursor in a non-plasma state through a plurality of second openings of the showerhead to the activation region, wherein the plurality of second openings are fluidly independent from the plurality of first openings within the showerhead; mixing the first gas with the second gas to activate the second gas in the activation region; and exposing the silicon containing surface of the substrate to the activated second gas.

公开(公告)号：US20240088071A1

公开(公告)日：2024-03-14

申请号：US17944596

申请日：2022-09-14

Applicant: Applied Materials, Inc.

Inventor： Yi XU ,  Yu LEI ,  Zhimin QI ,  Aixi ZHANG ,  Xianyuan ZHAO ,  Wei LEI ,  Xingyao GAO ,  Shirish A. PETHE ,  Tao HUANG ,  Xiang CHANG ,  Patrick Po-Chun LI ,  Geraldine VASQUEZ ,  Dien-yeh WU ,  Rongjun WANG

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L24/05 ,  H01L2224/03452 ,  H01L2224/03845 ,  H01L2224/05026 ,  H01L2224/05082 ,  H01L2224/05157 ,  H01L2224/05184 ,  H01L2924/01027 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/059 ,  H01L2924/35121

Abstract: Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.

公开(公告)号：US20250041973A1

公开(公告)日：2025-02-06

申请号：US18230615

申请日：2023-08-04

Applicant: Applied Materials, Inc.

Inventor： Chih-Yang CHANG ,  Shannon WANG ,  Dien-yeh WU ,  Yao-Hung YANG ,  Tom K. CHO

IPC: B23K26/362 ,  H01L21/67

Abstract: Embodiments of methods of creating a gasket for parts used in semiconductor processing are provided herein. In some embodiments, a method of creating a gasket includes: applying an elastomer material on a surface of a part used for substrate processing; and laser engraving the elastomer material to form the elastomer gasket to define a sealing surface on the part.

公开(公告)号：US20230326791A1

公开(公告)日：2023-10-12

申请号：US17718242

申请日：2022-04-11

Applicant: Applied Materials, Inc.

Inventor： Zhimin QI ,  Yi XU ,  Shirish A. PETHE ,  Xingyao GAO ,  Shiyu YUE ,  Aixi ZHANG ,  Wei LEI ,  Yu LEI ,  Geraldine VASQUEZ ,  Dien-yeh WU ,  Da HE

IPC: H01L21/768 ,  H01L21/285 ,  C23C14/18 ,  C23C16/14

CPC classification number: H01L21/76879 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  C23C14/18 ,  C23C16/14

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

公开(公告)号：US20240247376A1

公开(公告)日：2024-07-25

申请号：US18416304

申请日：2024-01-18

Applicant: Applied Materials, Inc.

Inventor： Douglas LONG ,  Jallepally RAVI ,  Dien-yeh WU

IPC: C23C16/455 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/16 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/285 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/1689 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/28518 ,  H01L21/68757

Abstract: A component of an apparatus for processing a substrate having a coating comprising fluorinated aluminum disposed on at least a portion of a surface of the component. A method of coating the component, a method of repairing a coating on a component, and a method of processing a substrate are also disclosed.

公开(公告)号：US20230377892A1

公开(公告)日：2023-11-23

申请号：US17748329

申请日：2022-05-19

Applicant: Applied Materials, Inc.

Inventor： Yiyang WAN ,  Weifeng YE ,  Shumao ZHANG ,  Gary HOW ,  Jiang LU ,  Lei ZHOU ,  Dien-yeh WU ,  Douglas LONG ,  Avgerinos V. GELATOS ,  Ying-Bing JIANG ,  Rongjun WANG ,  Xianmin TANG ,  Halbert CHONG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  C23C16/507

CPC classification number: H01L21/28518 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/42 ,  C23C16/507 ,  H01J37/32816 ,  H01J2237/332

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.