公开(公告)号：US20250066915A1

公开(公告)日：2025-02-27

申请号：US18484057

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Enle CHOO ,  Martin TRUEMPER ,  Shu-Kwan LAU ,  Jason JEWELL

IPC: C23C16/455 ,  C23C16/52

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. The valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. The gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).

公开(公告)号：US20230402268A1

公开(公告)日：2023-12-14

申请号：US17836657

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Songjae LEE ,  Masato ISHII ,  Martin TRUEMPER ,  Richard O. COLLINS ,  Martin Jeffrey SALINAS ,  Yong ZHENG ,  Anita ZHAO ,  Adele MARIADASS ,  Christophe MARCADAL ,  Henry BARANDICA ,  Ernesto J. ULLOA

IPC: H01J37/32 ,  C23C14/02 ,  B08B7/00 ,  B08B13/00

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32899 ,  C23C14/022 ,  B08B7/0035 ,  B08B13/00 ,  H01J37/32825 ,  H01J2237/335 ,  H01J2237/186 ,  H01J2237/182

Abstract: A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.