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    SUSCEPTOR TRANSFER FOR PROCESS CHAMBER
    2.
    发明公开
    SUSCEPTOR TRANSFER FOR PROCESS CHAMBER 审中-公开

    公开(公告)号：US20240105485A1

    公开(公告)日：2024-03-28

    申请号：US18299119

    申请日：2023-04-12

    Applicant: Applied Materials, Inc.

    Inventor： Ribhu GAUTAM ,  Shu-Kwan LAU ,  Masato ISHII ,  Miao-Chun CHEN ,  Kuan Chien SHEN

    IPC: H01L21/677 ,  H01L21/687

    CPC classification number: H01L21/67748 ,  H01L21/68707

    Abstract: A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

    LIFT PINS INCLUDING OPENING, AND RELATED COMPONENTS AND CHAMBER KITS, FOR PROCESSING CHAMBERS
    4.
    发明申请
    LIFT PINS INCLUDING OPENING, AND RELATED COMPONENTS AND CHAMBER KITS, FOR PROCESSING CHAMBERS 有权

    公开(公告)号：US20250132189A1

    公开(公告)日：2025-04-24

    申请号：US18382421

    申请日：2023-10-20

    Applicant: Applied Materials, Inc.

    Inventor： Masato ISHII ,  Ryan Sungbin HU ,  Kuan Chien SHEN

    IPC: H01L21/687 ,  C23C16/458

    Abstract: The present disclosure relates to lift pins that include an opening, and related components and chamber kits, for disposition in processing chambers for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body and a window. The processing chamber includes one or more heat sources, a substrate support, and a plurality of lift pins disposed in a processing volume. The plurality of lift pins respectively include a shaft section having a first outer dimension, a head section having a second outer dimension, and an opening formed in the shaft section. The opening has a dimension that is a first ratio that is at least 0.3 of the first outer dimension of the shaft section. The dimension of the opening is a second ratio that is at least 0.2 of the second outer dimension of the head section.

    SUSCEPTOR
    5.
    发明公开
    SUSCEPTOR 审中-公开

    公开(公告)号：US20240347372A1

    公开(公告)日：2024-10-17

    申请号：US18632421

    申请日：2024-04-11

    Applicant: Applied Materials, Inc.

    Inventor： Balakrishnam R. JAMPANA ,  Masato ISHII ,  Zhepeng CONG

    IPC: H01L21/687 ,  C23C16/458 ,  C30B25/12

    CPC classification number: H01L21/68785 ,  C23C16/4583 ,  H01L21/6875 ,  C30B25/12

    Abstract: Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

    CHAMBER PRESSURE CONTROL APPARATUS FOR NEAR ATMOSPHERIC EPITAXIAL GROWTH SYSTEM
    7.
    发明申请
    CHAMBER PRESSURE CONTROL APPARATUS FOR NEAR ATMOSPHERIC EPITAXIAL GROWTH SYSTEM 审中-公开
    大气环境生长系统的室内压力控制装置

    公开(公告)号：US20150013604A1

    公开(公告)日：2015-01-15

    申请号：US14305022

    申请日：2014-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Toshiyuki NAKAGAWA ,  Koji NAKANISHI ,  Tetsunori SASAYAMA ,  Masato ISHII

    IPC: C30B25/16

    CPC classification number: C30B25/165 ,  C23C16/4412 ,  C23C16/45557 ,  C30B29/36

    Abstract: The embodiments described herein generally relate to devices and systems for increased pressure control of near atmospheric deposition processes. Devices and systems disclosed herein generally include an exhaust apparatus for a processing chamber in connection with an automated valve which is positioned between the exhaust port and the abatement system. The processing chamber can generally be maintained at a pressure above atmospheric pressure while the automated valve controls the flow of gases leaving the chamber to keep the pressure constant in the chamber.

    Abstract translation: 本文描述的实施例通常涉及用于增加近大气沉积过程的压力控制的装置和系统。 本文公开的装置和系统通常包括用于处理室的排气装置，其与定位在排气口和减排系统之间的自动阀连接。 处理室通常可以保持在高于大气压的压力下，同时自动阀控制离开室的气体流，以保持室内的压力恒定。

    METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER
    8.
    发明申请
    METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER 有权

    公开(公告)号：US20250075369A1

    公开(公告)日：2025-03-06

    申请号：US18238810

    申请日：2023-08-28

    Applicant: Applied Materials, Inc.

    Inventor： Ryan Sungbin HU ,  Kuan Chien SHEN ,  Kazuyoshi KOBASHI ,  Chen-Yao CHAO ,  Masato ISHII

    IPC: C30B25/16 ,  H01L21/02

    Abstract: Disclosed herein are a gas delivery module, a processing chamber, and a method for depositing a film on a substrate. In one example, a gas delivery module is provided that includes a deposition precision flow device (PFD) flow controller, a carrier PFD flow controller, and a plurality of mass flow controllers (MFCs). The deposition PFD flow controller is configured to control a flow of a deposition gas through a plurality of outlets. The carrier PFD flow controller is configured to control a flow of a carrier gas through a plurality of outlets. The first MFC of the plurality of MFCs includes a first inlet and an outlet. The first inlet of the first MFC is fluidly coupled to a first outlet of the plurality of outlets of the deposition PFD and to a first outlet of the plurality of outlets of the carrier PFD. The second MFC of the plurality of MFCs includes a second inlet and an outlet. The second inlet of the second MFC is fluidly coupled to a second outlet of the plurality of outlets of the deposition PFD and to a second outlet of the plurality of outlets of the carrier PFD. The third MFC of the plurality of MFCs includes a third inlet and an outlet. The third inlet of the third MFC is fluidly coupled to a third outlet of the plurality of outlets of the deposition PFD and to a third outlet of the plurality of outlets of the carrier PFD.

    GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT
    10.
    发明申请
    GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT 审中-公开

    公开(公告)号：US20180053653A1

    公开(公告)日：2018-02-22

    申请号：US15682171

    申请日：2017-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Masato ISHII

    IPC: H01L21/205

    CPC classification number: H01L21/2053 ,  C23C16/45504 ,  C23C16/4558 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67253

    Abstract: One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.

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