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公开(公告)号:US10770321B2
公开(公告)日:2020-09-08
申请号:US16240318
申请日:2019-01-04
Applicant: Applied Materials, Inc.
Inventor: Kang-Lie Chiang , Greg A. Blackburn , Pallavi Zhang , Michael D. Armacost , Nitin Khurana
IPC: H01L21/67 , G01R21/06 , G01R19/165
Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.
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2.
公开(公告)号:US11837448B2
公开(公告)日:2023-12-05
申请号:US17242059
申请日:2021-04-27
Applicant: Applied Materials, Inc.
Inventor: Shuran Sheng , Lin Zhang , Jiyong Huang , Jang Seok Oh , Joseph C. Werner , Nitin Khurana , Ganesh Balasubramanian , Jennifer Y. Sun , Xinhai Han , Zhijun Jiang
CPC classification number: H01J37/32862 , B08B7/0035 , C23C16/4405 , H01J37/32449 , H01J37/32724 , H01J2237/335 , H01J2237/3321
Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.
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公开(公告)号:US10177018B2
公开(公告)日:2019-01-08
申请号:US15674180
申请日:2017-08-10
Applicant: Applied Materials, Inc.
Inventor: Kang-Lie Chiang , Greg A. Blackburn , Pallavi Zhang , Michael D. Armacost , Nitin Khurana
IPC: H01L21/67 , G01R21/06 , G01R19/165
Abstract: Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.
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