公开(公告)号：US20240234073A9

公开(公告)日：2024-07-11

申请号：US18381146

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Khokan C. PAUL ,  Tao SHENG

IPC: H01J9/50 ,  G01T1/185

CPC classification number: H01J9/50 ,  G01T1/185 ,  G01J2001/4247

Abstract: Embodiments of the present disclosure relates to methods, systems, and apparatus for monitoring radiation output of lamps of processing chambers. In some embodiments, a system contains a plurality of lamps coupled to a chamber, and one or more radiation sensors. Each lamp is identified with one or more zones, the radiation sensors are coupled to the chamber, where each radiation sensor is proximal at least one lamp. A controller contains instructions that, when executed, cause: the radiation sensors to convey, to the controller, information associated with radiation emitted by the lamps; the controller to analyze the information, the analyzing including: for each zone: determining a function of radiation over time; and monitoring the function for a condition associated with lamp aging; and the controller to, based on the analyzing the information, perform at least one of the following: vary input power delivered to the lamps; and generate an alert.

公开(公告)号：US20240141551A1

公开(公告)日：2024-05-02

申请号：US18140768

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Zhepeng CONG ,  Tao SHENG ,  Nimrod SMITH

IPC: C30B25/16 ,  C23C16/52 ,  G01B11/06 ,  G02B5/26

CPC classification number: C30B25/16 ,  C23C16/52 ,  G01B11/0625 ,  G02B5/26

Abstract: Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror, and a filter all along a propagation path and in optical communication along the propagation path. The propagation path splits into a first sub-path and second sub-path at the dichroic mirror. The first sub-path is directed to a pyrometer, and the second sub-path is directed to a spectrometer.

公开(公告)号：US20240120197A1

公开(公告)日：2024-04-11

申请号：US18538996

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Mostafa BAGHBANZADEH ,  Tao SHENG ,  Enle CHOO

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  G01B17/02

CPC classification number: H01L21/02293 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/463 ,  C23C16/52 ,  G01B17/02 ,  G01B17/025

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

公开(公告)号：US20230386803A1

公开(公告)日：2023-11-30

申请号：US17871505

申请日：2022-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ala MORADIAN ,  Tao SHENG ,  Nimrod SMITH ,  Ashur J. ATANOS ,  Vinh N. TRAN

IPC: H01J37/32 ,  C23C14/56 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32834 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/02057 ,  H01L21/67051 ,  H01J37/32477

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

公开(公告)号：US20230375460A1

公开(公告)日：2023-11-23

申请号：US17751197

申请日：2022-05-23

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Ashur J. ATANOS

IPC: G01N21/03 ,  G01N21/84 ,  H01L21/67 ,  C30B25/16 ,  C30B25/14

CPC classification number: G01N21/0332 ,  G01N21/8422 ,  H01L21/67253 ,  C30B25/16 ,  C30B25/14 ,  G01N2021/8427 ,  G01N2021/0389

Abstract: A method and apparatus for determining a growth rate on a semiconductor substrate is described herein. The apparatus is an optical sensor, such as an optical growth rate sensor. The optical sensor is positioned in an exhaust of a deposition chamber. The optical sensor is self-heated using one or more internal heating elements, such as a resistive heating element. The internal heating elements are configured to heat a sensor coupon. A film is formed on the sensor coupon by exhaust gases flowed through the exhaust and is correlated to film growth on a substrate within a process volume of the deposition chamber.

公开(公告)号：US20220349088A1

公开(公告)日：2022-11-03

申请号：US17243158

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  C30B23/00 ,  C30B25/12 ,  C30B25/10 ,  C30B23/06 ,  C23C14/54 ,  C23C16/46 ,  C23C16/52 ,  C23C16/458 ,  C23C14/50 ,  G01N21/55

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20250037975A1

公开(公告)日：2025-01-30

申请号：US18361267

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Khokan C. PAUL ,  Tao SHENG

IPC: H01J37/32 ,  H01L21/67

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

公开(公告)号：US20240410078A1

公开(公告)日：2024-12-12

申请号：US18805150

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  B41J2/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01B11/06 ,  G01N21/55 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20240274463A1

公开(公告)日：2024-08-15

申请号：US18108407

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nimrod SMITH ,  Tao SHENG ,  Chen-Ying WU ,  Hui CHEN ,  Xinning LUAN

IPC: H01L21/687 ,  H01L21/02

CPC classification number: H01L21/68735 ,  H01L21/0262

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.

公开(公告)号：US20240141487A1

公开(公告)日：2024-05-02

申请号：US17975195

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Khokan C. PAUL ,  Nimrod SMITH ,  Tao SHENG ,  Vinh TRAN

IPC: C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC classification number: C23C16/45517 ,  C23C16/4583 ,  C30B25/12 ,  C30B25/14 ,  C23C16/4408

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a disk and liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter less than the outer diameter of the quartz disk.