公开(公告)号：US20250003112A1

公开(公告)日：2025-01-02

申请号：US18634248

申请日：2024-04-12

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Zhepeng CONG ,  Vishwas Kumar PANDEY ,  Tao SHENG ,  Nimrod SMITH ,  Karthik RAMANATHAN ,  Manjunath SUBBANNA

IPC: C30B25/16 ,  C30B25/10 ,  G01K1/02 ,  G01K3/08

Abstract: A method and apparatus for virtually sensing a temperature of a hardware component of semiconductor processing chamber are disclosed. In one or more embodiments, a method of operation for a processing chamber suitable for use in semiconductor manufacturing includes receiving a process recipe for a manufacturing process and monitoring a first temperature of a first hardware component of the processing chamber using a sensor. The method further includes synthesizing, using a model of the processing chamber, a first virtual temperature of a second hardware component of the processing chamber based on the received process recipe and the first temperature of the first hardware component.

公开(公告)号：US20240141551A1

公开(公告)日：2024-05-02

申请号：US18140768

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Zhepeng CONG ,  Tao SHENG ,  Nimrod SMITH

IPC: C30B25/16 ,  C23C16/52 ,  G01B11/06 ,  G02B5/26

CPC classification number: C30B25/16 ,  C23C16/52 ,  G01B11/0625 ,  G02B5/26

Abstract: Embodiments of the present disclosure generally relate to apparatus and systems for in-situ film growth rate monitoring and include a system to monitor film growth on a substrate including a light source, a collimator, a dichroic mirror, and a filter all along a propagation path and in optical communication along the propagation path. The propagation path splits into a first sub-path and second sub-path at the dichroic mirror. The first sub-path is directed to a pyrometer, and the second sub-path is directed to a spectrometer.

公开(公告)号：US20240038575A1

公开(公告)日：2024-02-01

申请号：US17875302

申请日：2022-07-27

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Richard O. COLLINS

IPC: H01L21/687 ,  C30B25/12 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C30B25/12 ,  C23C16/4583

Abstract: Embodiments described herein relate to a susceptor kit. The susceptor kit includes a susceptor support plate including a plurality of susceptor lift pin holes and a plurality of susceptor support holes, a plurality of susceptor supports recessed within the plurality of susceptor support holes and coupled to the susceptor support plate, and a lift pin assembly. The plurality of susceptor supports receive a plurality of susceptor support pins. The support body supports the support pin link in a spaced apart relation to the susceptor support plate. The lift pin assembly is received in the plurality of susceptor lift pin holes. The lift pin assembly includes a lift pin cap and a susceptor lift pin comprising a susceptor stop plate. The susceptor support plate stop is receivable within the susceptor lift pin holes.

公开(公告)号：US20230386803A1

公开(公告)日：2023-11-30

申请号：US17871505

申请日：2022-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ala MORADIAN ,  Tao SHENG ,  Nimrod SMITH ,  Ashur J. ATANOS ,  Vinh N. TRAN

IPC: H01J37/32 ,  C23C14/56 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32834 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/02057 ,  H01L21/67051 ,  H01J37/32477

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

公开(公告)号：US20250146173A1

公开(公告)日：2025-05-08

申请号：US19018386

申请日：2025-01-13

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Errol Antonio C. SANCHEZ ,  Michael R. RICE ,  Nimrod SMITH ,  Ashur J. ATANOS

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/10

Abstract: A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.

公开(公告)号：US20250129509A1

公开(公告)日：2025-04-24

申请号：US18382429

申请日：2023-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Alain DUBOUST ,  Ala MORADIAN ,  Tao SHENG ,  Nimrod SMITH ,  Ashur J. ATANOS

IPC: C30B25/14 ,  C30B25/10 ,  C30B25/12

Abstract: The present disclosure relates to an auxiliary flow plate for process kits and semiconductor processing chambers, and related methods and flow guides. In one or more embodiments, a chamber kit includes a liner, a first plate, and a second plate. The liner includes an inner face, a first ledge disposed along the inner face, and a second ledge disposed along the inner face. The second ledge is spaced from the first ledge along the inner face. The first plate is sized and shaped to be disposed within the liner on the first ledge. The second plate is sized and shaped to be disposed within the liner on the second ledge.

公开(公告)号：US20240363327A1

公开(公告)日：2024-10-31

申请号：US18308776

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Tao SHENG

IPC: H01K1/26 ,  C23C16/46 ,  C30B25/10 ,  F27B17/00 ,  H01K7/00 ,  H01L21/67 ,  H05B3/00

CPC classification number: H01K1/26 ,  C23C16/46 ,  C30B25/105 ,  F27B17/0025 ,  H01K7/00 ,  H01L21/67115 ,  H05B3/0047

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for lamp heating in process chambers used to process semiconductor substrates. The apparatus includes a lamp for use in a processing chamber, the lamp having a lamp envelope with an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end. In another embodiment, the lamp assembly has at least one lamp, the at least one lamp having a lamp envelope having an interior volume, a first end of the lamp envelope coupled to a base, a second end of the lamp envelope opposing the first end, a filament disposed within the interior volume, and a radiation shield proximate to the second end.

公开(公告)号：US20240258141A1

公开(公告)日：2024-08-01

申请号：US18160274

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Nimrod SMITH ,  Khokan C. PAUL ,  Vinh N. TRAN ,  Awse MA'AYA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

CPC classification number: H01L21/67259 ,  H01L21/67167 ,  H01L21/67742 ,  H01L21/681 ,  H01L21/68764

Abstract: An apparatus, method, and system for calibrating substrate positioning and placement on a substrate support in a process chamber via imaging. In an embodiment, a calibrating substrate is provided. The calibrating substrate generally includes a top surface having a plurality of first marking features and a at least one edge marking feature configured to be detectable relative to the remaining portions of the top surface of the body by an imaging apparatus.

公开(公告)号：US20240247404A1

公开(公告)日：2024-07-25

申请号：US18101523

申请日：2023-01-25

Applicant: Applied Materials, Inc.

Inventor： Nimrod SMITH ,  Zhepeng CONG ,  Ashur J. ATANOS

IPC: C30B25/10 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16

CPC classification number: C30B25/10 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16

Abstract: Embodiments of the present disclosure generally relate to a pre-heat ring for use in a substrate processing chamber, and related methods. A pre-heat ring including black quartz (such as formed of black quartz) facilitates material properties that can facilitate heating benefits. In one or more embodiments, a pre-heat ring applicable for use in a semiconductor processing chamber includes one or more ring segments. The one or more ring segments include an inner edge defining an inner dimension, an outer edge defining an outer dimension, a first side surface between the inner edge and the outer edge, and a second side surface between the inner edge and the outer edge. The second side surface is opposing the first side surface. The one or more ring segments include black quartz. The black quartz includes silicon dioxide (SiO2) impregnated with undoped silicon (Si).

公开(公告)号：US20250037975A1

公开(公告)日：2025-01-30

申请号：US18361267

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Khokan C. PAUL ,  Tao SHENG

IPC: H01J37/32 ,  H01L21/67

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.