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公开(公告)号:US11560626B2
公开(公告)日:2023-01-24
申请号:US16876845
申请日:2020-05-18
Applicant: Applied Materials, Inc.
Inventor: Timothy Joseph Franklin , Adam Fischbach , Edward Haywood , Abhijit B. Mallick , Pramit Manna , Carlaton Wong , Stephen C. Garner , Eswaranand Venkatasubramanian
IPC: C23C16/458 , H01J37/32 , C23C16/46 , C23C16/50 , C23C16/455 , H01L21/02 , H01L21/033
Abstract: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.
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公开(公告)号:US11557466B2
公开(公告)日:2023-01-17
申请号:US16993759
申请日:2020-08-14
Applicant: Applied Materials, Inc.
Inventor: Samuel E. Gottheim , Abhijit B. Mallick , Pramit Manna , Eswaranand Venkatasubramanian , Timothy Joseph Franklin , Edward Haywood , Stephen C. Garner , Adam Fischbach
IPC: C23C16/509 , H01J37/32
Abstract: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.
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公开(公告)号:US11189517B2
公开(公告)日:2021-11-30
申请号:US16791875
申请日:2020-02-14
Applicant: Applied Materials, Inc.
Inventor: Zheng John Ye , Edward Haywood , Adam Fischbach , Timothy Joseph Franklin
IPC: H01L21/683 , H01J37/32
Abstract: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.
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公开(公告)号:US12068137B2
公开(公告)日:2024-08-20
申请号:US17032220
申请日:2020-09-25
Applicant: APPLIED MATERIALS, INC.
Inventor: Reyn Tetsuro Wakabayashi , Carlaton Wong , Timothy Joseph Franklin
IPC: H01J37/32 , C23C16/455 , F16K27/00 , H01L21/67
CPC classification number: H01J37/32568 , C23C16/45559 , F16K27/003 , H01J37/3244 , H01J37/3255 , H01L21/67017 , H01L21/6719 , H01J2237/334
Abstract: A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.
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公开(公告)号:US11959174B2
公开(公告)日:2024-04-16
申请号:US17131315
申请日:2020-12-22
Applicant: Applied Materials, Inc.
Inventor: Kallol Bera , Sathya Swaroop Ganta , Timothy Joseph Franklin , Kaushik Alayavalli , Akshay Dhanakshirur , Stephen C. Garner , Bhaskar Kumar
IPC: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32
CPC classification number: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32082 , H01J37/32174 , H01J37/3266 , H01J37/32669
Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.
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公开(公告)号:US20230323531A1
公开(公告)日:2023-10-12
申请号:US18089388
申请日:2022-12-27
Applicant: Applied Materials, Inc.
Inventor: Joseph Frederick Behnke , Carlaton Wong , Albert Barrett Hicks, III , Steven Darrell Marcus , Joseph Frederick Sommers , Christopher Laurent Beaudry , Timothy Joseph Franklin
IPC: C23C16/40 , C23C16/455 , C23C16/52
CPC classification number: C23C16/403 , C23C16/45544 , C23C16/52
Abstract: A method includes affixing a supply apparatus to inlets for one or more channels of a chamber component. The channels provide one or more gas flow paths between a first side of the chamber component that comprises the inlets and a second side of the chamber component comprising outlets of the one or more channels. The method further includes affixing an exhaust apparatus to the outlets of the one or more channels. The method further includes performing a plurality of atomic layer deposition cycles to deposit a corrosion resistant coating on interior surfaces of the one or more channels of the chamber component.
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公开(公告)号:US20230187182A1
公开(公告)日:2023-06-15
申请号:US17548219
申请日:2021-12-10
Applicant: Applied Materials, Inc.
Inventor: Joseph Frederick Sommers , Joseph Frederick Behnke , Xue Yang Chang , Anwar Husain , Alexander Alhajj Sulyman , Timothy Joseph Franklin , David J. Coumou
CPC classification number: H01J37/32495 , B05D7/58 , B05D1/12 , B05D3/12 , H01J37/32715 , H01J37/32467 , H01J2237/334
Abstract: A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer. The third layer is of a third material. The third material includes the first ceramic material or a second ceramic material. The third material does not adhere to the first polymer or the second polymer. The third material does adhere to the first ceramic material or the second ceramic material of the second layer.
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公开(公告)号:USD1049067S1
公开(公告)日:2024-10-29
申请号:US29833393
申请日:2022-04-04
Applicant: Applied Materials, Inc.
Designer: Rohan Vijay Rane , Xue Yang Chang , Timothy Joseph Franklin , Daniel Sang Byun
Abstract: FIG. 1 is a top, front, right isometric view of a ring for an anti-rotation process kit for a substrate processing chamber, showing our new design.
FIG. 2 is a bottom, left, back isometric view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a front elevation view thereof.
FIG. 6 is a back elevation view thereof.
FIG. 7 is a left elevation view thereof.
FIG. 8 is a right elevation view thereof; and,
FIG. 9 is an enlarged cross-sectional view taken along line 9-9 in FIG. 3 with the enlargements taken from the dashed-dot encircled portions labeled, “FIG. 9,” in FIG. 3.
The even dashed broken lines in FIG. 9 represent unclaimed environment and form no part of the claimed design. The dash-dot lines represent the boundary lines of the enlarged portion view of FIG. 9 shown in FIGS. 3 and 9 and form no part of the claimed design.-
公开(公告)号:US11257698B2
公开(公告)日:2022-02-22
申请号:US16997807
申请日:2020-08-19
Applicant: Applied Materials, Inc.
Inventor: Philip Allan Kraus , Timothy Joseph Franklin
Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.
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公开(公告)号:US10790175B2
公开(公告)日:2020-09-29
申请号:US15955375
申请日:2018-04-17
Applicant: APPLIED MATERIALS, INC.
Inventor: Philip Allan Kraus , Timothy Joseph Franklin
Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.
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