RF electrostatic chuck filter circuit

    公开(公告)号:US11189517B2

    公开(公告)日:2021-11-30

    申请号:US16791875

    申请日:2020-02-14

    Abstract: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.

    Ring for an anti-rotation process kit for a substrate processing chamber

    公开(公告)号:USD1049067S1

    公开(公告)日:2024-10-29

    申请号:US29833393

    申请日:2022-04-04

    Abstract: FIG. 1 is a top, front, right isometric view of a ring for an anti-rotation process kit for a substrate processing chamber, showing our new design.
    FIG. 2 is a bottom, left, back isometric view thereof.
    FIG. 3 is a top plan view thereof.
    FIG. 4 is a bottom plan view thereof.
    FIG. 5 is a front elevation view thereof.
    FIG. 6 is a back elevation view thereof.
    FIG. 7 is a left elevation view thereof.
    FIG. 8 is a right elevation view thereof; and,
    FIG. 9 is an enlarged cross-sectional view taken along line 9-9 in FIG. 3 with the enlargements taken from the dashed-dot encircled portions labeled, “FIG. 9,” in FIG. 3.
    The even dashed broken lines in FIG. 9 represent unclaimed environment and form no part of the claimed design. The dash-dot lines represent the boundary lines of the enlarged portion view of FIG. 9 shown in FIGS. 3 and 9 and form no part of the claimed design.

    Selective etch rate monitor
    9.
    发明授权

    公开(公告)号:US11257698B2

    公开(公告)日:2022-02-22

    申请号:US16997807

    申请日:2020-08-19

    Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.

    Selective etch rate monitor
    10.
    发明授权

    公开(公告)号:US10790175B2

    公开(公告)日:2020-09-29

    申请号:US15955375

    申请日:2018-04-17

    Abstract: Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. The resonant system may include a resonating body, a first electrode formed over a first surface of the resonating body, a second electrode formed over a second surface of the resonating body, and a sacrificial layer formed over the first electrode. In an embodiment, at least a portion of the first electrode is not covered by the sacrificial layer. In an embodiment, the conductive housing may secure the resonant system. Additionally, the conductive housing contacts the first electrode, and at least a portion of an interior edge of the conductive housing may be spaced away from the sacrificial layer.

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