公开(公告)号：US20250090975A1

公开(公告)日：2025-03-20

申请号：US18888013

申请日：2024-09-17

Applicant: ENTEGRIS, INC.

Inventor： Michael Watson ,  Cristian Ocampo ,  Joseph E. Reynolds, III ,  Scott L. Battle ,  Sara Moghaddam ,  Benjamin R. Garrett

IPC: B01D7/00 ,  C01F7/62 ,  C01G39/00 ,  C01G39/04 ,  C01G41/04 ,  C23C16/44

Abstract: Methods for removing impurities from precursors and related systems are provided. A method comprises at least one thermal cycle. The at least one thermal cycle comprises one or more of the following steps: heating a vessel comprising a precursor and at least one impurity to a temperature for a duration sufficient to vaporize at least a portion of the at least one impurity; measuring a vapor pressure within the vessel to obtain a measured vapor pressure and comparing the measured vapor pressure to a set point vapor pressure; and when the measured vapor pressure is above or within the set point vapor pressure, removing, from the vessel, at least a portion of a vapor comprising the at least one impurity. Other methods and systems are provided herein.

公开(公告)号：US20230298909A1

公开(公告)日：2023-09-21

申请号：US18123447

申请日：2023-03-20

Applicant: ENTEGRIS, INC.

Inventor： Michael Watson ,  Christopher Calhoun ,  Cristian Ocampo ,  Scott L. Battle ,  Benjamin Cardozo ,  Benjamin R. Garrett

IPC: H01L21/67 ,  C23C16/448 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/67017 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/08

Abstract: Systems and methods for controlling precursor delivery. The systems and methods may comprise a precursor delivery vessel in fluid communication with a gas flow line. The precursor delivery vessel may comprise at least one tray containing a vaporizable precursor. An amount of thermal energy may be supplied to the at least one tray in an amount sufficient to vaporize the vaporizable precursor. The vaporized precursor may be dispensed from the precursor delivery vessel to the gas flow line. The amount of thermal energy supplied to the at least one tray may be adjusted sufficient to maintain a pressure of the vaporized precursor, in the gas flow line, within a pressure range.

公开(公告)号：US20240002081A1

公开(公告)日：2024-01-04

申请号：US18214241

申请日：2023-06-26

Applicant: ENTEGRIS, INC.

Inventor： Benjamin H. Olson ,  Dalton Vance Locklear ,  Bryan C. Hendrix ,  Jacob Thomas ,  Aniket Joshi ,  Scott L. Battle ,  Benjamin Cardozo ,  Benjamin R. Garrett ,  Juan Valdez ,  Michael Watson

IPC: B65B1/22 ,  B65B1/06

CPC classification number: B65B1/22 ,  B65B1/06

Abstract: A system including a vessel for containing a fill material and a vibration source connected to the vessel. The vibration source can increase a bulk density of the fill material. A fill material ratio can be defined as a particle density of the fill material divided by the bulk density of the fill material after vibration. After the vibration source increases the bulk density of the fill material, the fill material ratio can range from about 0.15 to about 0.75.

公开(公告)号：US20230142966A1

公开(公告)日：2023-05-11

申请号：US17982220

申请日：2022-11-07

Applicant: ENTEGRIS, INC.

Inventor： Benjamin R. Garrett ,  Michael Watson ,  Pei Zhao

IPC: C23C16/16 ,  C23C16/455

CPC classification number: C23C16/16 ,  C23C16/45553

Abstract: The invention provides certain molybdenum-containing compounds which are believed to be useful in the vapor deposition of molybdenum-containing films onto the surface of various microelectronic device substrates. In one aspect, the invention provides a process for depositing a molybdenum-containing film onto a microelectronic device substrate, which comprises exposing the substrate, in a reaction zone, to a compound of Formula (I) as described herein, under vapor deposition conditions.

公开(公告)号：US12297531B2

公开(公告)日：2025-05-13

申请号：US17982220

申请日：2022-11-07

Applicant: ENTEGRIS, INC.

Inventor： Benjamin R. Garrett ,  Michael Watson ,  Pei Zhao

IPC: C23C16/16 ,  C23C16/455

Abstract: A process for depositing a molybdenum-containing film onto a microelectronic device substrate, which comprises exposing the substrate, in a reaction zone, to a compound of Formula (I) under vapor deposition conditions, thereby forming a molybdenum-containing film on the substrate. The molybdenum-containing films include one or more of molybdenum metal, molybdenum oxide, molybdenum carbide, and molybdenum nitride.

公开(公告)号：US20250003072A1

公开(公告)日：2025-01-02

申请号：US18755011

申请日：2024-06-26

Applicant: ENTEGRIS, INC.

Inventor： Joseph E. Reynolds, III ,  Michael Watson ,  Bryan C. Hendrix ,  Sara Moghaddam ,  Devon N. Dion ,  Benjamin R. Garrett ,  Carlo Waldfried ,  Virendra Warke

IPC: C23C16/455 ,  C23C16/44

Abstract: High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gas-exposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.

公开(公告)号：US20240409430A1

公开(公告)日：2024-12-12

申请号：US18679227

申请日：2024-05-30

Applicant: ENTEGRIS, INC.

Inventor： Juan Valdez ,  Michael Watson ,  Scott L. Battle ,  Matthew W. Calhoun ,  Benjamin R. Garrett ,  Wesley W. Goggans

IPC: C01G27/04 ,  C23C16/08 ,  C23C16/448

Abstract: A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.

公开(公告)号：US20240116774A1

公开(公告)日：2024-04-11

申请号：US18376476

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Benjamin Garrett ,  Michael Watson ,  Scott L. Battle ,  Thomas M. Cameron ,  Bryan Hendrix

IPC: C01G41/04

CPC classification number: C01G41/04

Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.

公开(公告)号：US20250020282A1

公开(公告)日：2025-01-16

申请号：US18767649

申请日：2024-07-09

Applicant: ENTEGRIS, INC.

Inventor： Scott L. Battle ,  Benjamin R. Garrett ,  Bryan Hendrix ,  Michael Watson ,  Sara Moghaddam ,  Yusuke Tamaki

IPC: F17C9/02

Abstract: Diffuser plates in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel contains or is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The vessel discharges or is configured to discharge the precursor vapor through the outlet. The vaporizer includes a diffuser located within the vessel, between the vaporizable precursor and the outlet. The diffuser has a first surface, a second surface opposite the first surface, and a plurality of holes extending from the first surface of the diffuser through to the second surface of the diffuser.

公开(公告)号：US20240190718A1

公开(公告)日：2024-06-13

申请号：US18533684

申请日：2023-12-08

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Michael Watson ,  Benjamin R. Garrett ,  Bryan Clark Hendrix ,  Cristian Ocampo ,  Juan Valdez ,  Robert L. Wright, JR.

IPC: C01G39/04

CPC classification number: C01G39/04

Abstract: Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl5 vapor in the second vessel to separate the MoCl5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl5 precursor.