公开(公告)号：US20230261578A1

公开(公告)日：2023-08-17

申请号：US18128512

申请日：2023-03-30

Applicant: FLOSFIA INC.

Inventor： Toshihiro IWAKI ,  Takuto IGAWA ,  Hidehito KITAKADO ,  Yusuke MATSUBARA

IPC: H02M3/158 ,  H02M1/14

CPC classification number: H02M3/1582 ,  H02M1/143

Abstract: Provided is a power conversion circuit and a control system in which radiated noise of the entire circuit is reduced. A power conversion circuit including at least: a switching element (e.g. a MOSFET, etc.) and a diode (e.g. a commutating diode, etc.): wherein the power conversion circuit is a single-switch power conversion; and the diode is a gallium oxide-based Schottky barrier diode.

公开(公告)号：US20230207431A1

公开(公告)日：2023-06-29

申请号：US18111221

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L23/495 ,  H01L29/872 ,  H01L29/868 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/49562 ,  H01L25/18 ,  H01L25/072 ,  H01L29/868 ,  H01L29/872 ,  H01L24/48 ,  H01L2224/48245

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

公开(公告)号：US20230179095A1

公开(公告)日：2023-06-08

申请号：US18094540

申请日：2023-01-09

Applicant: FLOSFIA INC.

Inventor： Hidehito KITAKADO ,  Yusuke MATSUBARA

IPC: H02M7/219 ,  H02M1/42 ,  H02M1/00

CPC classification number: H02M7/219 ,  H02M1/0051 ,  H02M1/4225

Abstract: Provided is a power conversion circuit including at least: a switching element that opens and closes an inputted voltage via a reactor; and a commutating diode that passes a current in a direction of an electromotive force by a voltage including at least the electromotive force generated from the reactor when the switching element is turned off, the commutating diode including a gallium oxide-based Schottky barrier diode.

公开(公告)号：US20230207541A1

公开(公告)日：2023-06-29

申请号：US18111227

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/538 ,  H02P27/06 ,  H02P29/024

CPC classification number: H01L25/16 ,  H01L24/20 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H02P27/06 ,  H02P29/027 ,  H01L2924/10253 ,  H01L2924/1067 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1207 ,  H01L2924/13091

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.