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公开(公告)号：US10562759B2
公开(公告)日：2020-02-18
申请号：US15652920
申请日：2017-07-18
Applicant: Foresee Technology Corp.
Inventor： Chien-Chang Chen , Yi-Der Liang , Shiao-Yi Lin , Cheng-Kuang Yang
Abstract: The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.
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公开(公告)号：US10562760B2
公开(公告)日：2020-02-18
申请号：US15652960
申请日：2017-07-18
Applicant: Foresee Technology Corp.
Inventor： Chien-Chang Chen , Yi-Der Liang , Shiao-Yi Lin , Cheng-Kuang Yang
Abstract: The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.
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公开(公告)号：US10961113B2
公开(公告)日：2021-03-30
申请号：US15689530
申请日：2017-08-29
Applicant: Foresee Technology Corp.
Inventor： Chien-Chang Chen , Yi-Der Liang , Shiao-Yi Lin , Cheng-Kuang Yang
Abstract: A CMOS single chip includes a movable film, at least one support pillar, a base metal layer and a circuit integration. The movable film is disposed on a top layer of the CMOS single chip and has a plurality of through-vias. The support pillar is disposed under the movable film to provide a supporting force of the movable film. The base metal layer is formed under the support pillars and isolated from the support pillars, and faces towards the movable film to form a micro capacitor to sense one of the outside sensing signals. The area of the base metal layer is larger than the area of the movable film. The circuit integration is formed under the base metal layer, or formed under the base metal layer and on the side of the movable film, and connected to the movable film and the base metal layer.
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公开(公告)号：US09902610B2
公开(公告)日：2018-02-27
申请号：US15155448
申请日：2016-05-16
Applicant: Foresee Technology Corp..
Inventor： Chien-Chan Chen , Yi-Der Liang , Shiao-Yi Lin , Cheng-Kuang Yang
CPC classification number: B81B3/0054 , B81B2201/0257 , B81B2203/0118 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
Abstract: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.
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