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1.发明申请公开(公告)号：US20150185096A1
公开(公告)日：2015-07-02
申请号：US14521071
申请日：2014-10-22
Applicant: Hyundai Motor Company
Inventor： Dong Gu Kim , Yong Sung Lee , Hiwon Lee
Abstract: A switching type six-axis force-torque sensor is provided which includes: a sensor substrate attached to a structural body to be measured. A first measuring unit is installed at one side in respect to a central portion of the sensor substrate and measures strain and a second measuring unit is installed on the sensor substrate at a position that faces the first measuring unit in respect to the central portion and measures strain. Further, a third measuring unit is installed at a position that is orthogonal to a connecting line, which connects the first measuring unit and the second measuring unit, and measures strain and a fourth measuring unit is installed at a position that faces the third measuring unit in respect to the central portion and measures strain.
Abstract translation: 提供了一种开关式六轴力矩传感器，其包括：附接到待测结构体的传感器基板。 第一测量单元相对于传感器基板的中心部分安装在一侧并且测量应变，并且第二测量单元安装在传感器基板上相对于中心部分面对第一测量单元的位置并且测量 应变。 此外，第三测量单元安装在与连接第一测量单元和第二测量单元的连接线正交的位置处，并且测量应变，并且第四测量单元安装在面向第三测量单元的位置 关于中央部分，并测量应变。
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公开(公告)号：US20150187604A1
公开(公告)日：2015-07-02
申请号：US14319324
申请日：2014-06-30
Applicant: HYUNDAI MOTOR COMPANY
Inventor： Ilseon Yoo , Hiwon Lee , Soon-myung Kwon , Hyunsoo Kim
IPC: H01L21/50 , H01L21/308 , H01L21/306
CPC classification number: H01L21/50 , H01L21/185 , H01L21/30604 , H01L21/308
Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.
Abstract translation: 一种接合半导体衬底的方法包括：在第一半导体衬底上形成对准键; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第一金属层和第二金属层; 并且当所述第一半导体衬底和所述第二半导体衬底接合时，所述第一半导体衬底和所述第二半导体衬底接合所述对准键位于所述对准凹槽处。
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公开(公告)号：US10041969B2
公开(公告)日：2018-08-07
申请号：US15182349
申请日：2016-06-14
Applicant: Hyundai Motor Company
Inventor： Hiwon Lee
IPC: G01P15/125 , G01P15/18 , G01P15/08
CPC classification number: G01P15/125 , G01P15/18 , G01P2015/084
Abstract: An acceleration sensor includes: a moving electrode extending in at least one of a first direction and a second direction perpendicular to the first direction, and including a plurality of planar patterns connected with each other; and an opposing electrode forming a capacitance with the moving electrode, wherein the plurality of planar patterns include: a first frame pattern; a first anchor pattern fixing the moving electrode to a surrounding structure; a first spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the first direction; a second spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the second direction; a wing pattern; and a third spring pattern connecting the first frame pattern and the wing pattern and having a stretching direction of a third direction perpendicular to the first and second directions.
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公开(公告)号：US20150187704A1
公开(公告)日：2015-07-02
申请号：US14445653
申请日：2014-07-29
Applicant: Hyundai Motor Company
Inventor： Ilseon Yoo , Hiwon Lee , Soon-myung Kwon , Hyunsoo Kim
IPC: H01L23/544 , H01L21/311 , H01L21/027 , H01L23/00
CPC classification number: H01L23/544 , H01L21/0272 , H01L21/31133 , H01L21/31144 , H01L24/83 , H01L2223/54426 , H01L2224/83139 , H01L2224/83201 , H01L2224/83902
Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.
Abstract translation: 一种连接半导体衬底的方法，其可以包括：在第一半导体衬底上形成对准键; 在所述第一半导体衬底和所述对准键上形成绝缘层; 在所述绝缘层上形成第一金属层图案和第二金属层图案; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第三金属层图案和第四金属层图案; 并且提供在第一半导体衬底和第二半导体衬底接合时将对准键定位在对准凹槽处的第一半导体衬底和第二半导体衬底。
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Patent Agency Ranking
公开(公告)号：US20170168083A1
公开(公告)日：2017-06-15
申请号：US15182349
申请日：2016-06-14
Applicant: Hyundai Motor Company
Inventor： Hiwon Lee
IPC: G01P15/125
CPC classification number: G01P15/125 , G01P15/18 , G01P2015/084
Abstract: An acceleration sensor includes: a moving electrode extending in at least one of a first direction and a second direction perpendicular to the first direction, and including a plurality of planar patterns connected with each other; and an opposing electrode forming a capacitance with the moving electrode, wherein the plurality of planar patterns include: a first frame pattern; a first anchor pattern fixing the moving electrode to a surrounding structure; a first spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the first direction; a second spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the second direction; a wing pattern; and a third spring pattern connecting the first frame pattern and the wing pattern and having a stretching direction of a third direction perpendicular to the first and second directions.
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6.发明授权公开(公告)号：US09435705B2
公开(公告)日：2016-09-06
申请号：US14521071
申请日：2014-10-22
Applicant: Hyundai Motor Company
Inventor： Dong Gu Kim , Yong Sung Lee , Hiwon Lee
Abstract: A switching type six-axis force-torque sensor is provided which includes: a sensor substrate attached to a structural body to be measured. A first measuring unit is installed at one side in respect to a central portion of the sensor substrate and measures strain and a second measuring unit is installed on the sensor substrate at a position that faces the first measuring unit in respect to the central portion and measures strain. Further, a third measuring unit is installed at a position that is orthogonal to a connecting line, which connects the first measuring unit and the second measuring unit, and measures strain and a fourth measuring unit is installed at a position that faces the third measuring unit in respect to the central portion and measures strain.
Abstract translation: 提供了一种开关式六轴力矩传感器，其包括：附接到待测结构体的传感器基板。 第一测量单元相对于传感器基板的中心部分安装在一侧并且测量应变，并且第二测量单元安装在传感器基板上相对于中心部分面对第一测量单元的位置并且测量 应变。 此外，第三测量单元安装在与连接第一测量单元和第二测量单元的连接线正交的位置处，并且测量应变，并且第四测量单元安装在面向第三测量单元的位置 关于中央部分，并测量应变。
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公开(公告)号：US09368373B2
公开(公告)日：2016-06-14
申请号：US14319324
申请日：2014-06-30
Applicant: Hyundai Motor Company
Inventor： Ilseon Yoo , Hiwon Lee , Soon-myung Kwon , Hyunsoo Kim
IPC: H01L21/50 , H01L21/308 , H01L21/306 , H01L21/18
CPC classification number: H01L21/50 , H01L21/185 , H01L21/30604 , H01L21/308
Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.
Abstract translation: 一种接合半导体衬底的方法包括：在第一半导体衬底上形成对准键; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第一金属层和第二金属层; 并且当所述第一半导体衬底和所述第二半导体衬底接合时，所述第一半导体衬底和所述第二半导体衬底接合所述对准键位于所述对准凹槽处。
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公开(公告)号：US09312227B2
公开(公告)日：2016-04-12
申请号：US14445653
申请日：2014-07-29
Applicant: Hyundai Motor Company
Inventor： Ilseon Yoo , Hiwon Lee , Soon-myung Kwon , Hyunsoo Kim
IPC: H01L23/544 , H01L23/00 , H01L21/311 , H01L21/027
CPC classification number: H01L23/544 , H01L21/0272 , H01L21/31133 , H01L21/31144 , H01L24/83 , H01L2223/54426 , H01L2224/83139 , H01L2224/83201 , H01L2224/83902
Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.
Abstract translation: 一种连接半导体衬底的方法，其可以包括：在第一半导体衬底上形成对准键; 在所述第一半导体衬底和所述对准键上形成绝缘层; 在所述绝缘层上形成第一金属层图案和第二金属层图案; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第三金属层图案和第四金属层图案; 并且提供在第一半导体衬底和第二半导体衬底接合时将对准键定位在对准凹槽处的第一半导体衬底和第二半导体衬底。
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公开(公告)号：US20150187961A1
公开(公告)日：2015-07-02
申请号：US14484732
申请日：2014-09-12
Applicant: Hyundai Motor Company
Inventor： Dong Gu Kim , Yong Sung Lee , Hiwon Lee
IPC: H01L29/84
Abstract: The present disclosure relates to a piezoresistive sensor that improves measurement precision by using a piezoresistive pattern that increases a piezoresistive deformation rate. An embodiment of the present disclosure provides a piezoresistive sensor that may include: a semiconductor substrate, four beams formed as a cross-shape with reference to a central body of the semiconductor substrate, and sixteen piezoresistive patterns formed on a top of the four beams, wherein sixteen piezoresistive patterns are formed as an “X” shape and are disposed on the four beams so as to form four piezoresistive pattern groups.
Abstract translation: 本公开涉及一种压阻传感器，其通过使用增加压阻变形率的压阻图案来提高测量精度。 本公开的实施例提供一种压阻传感器，其可以包括：半导体衬底，相对于半导体衬底的中心体形成为十字形的四个光束，以及形成在四个光束的顶部上的十六个压阻图案， 其中十六个压阻图案形成为“X”形并且设置在四个光束上，以便形成四个压阻图案组。
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