公开(公告)号：US20150187604A1

公开(公告)日：2015-07-02

申请号：US14319324

申请日：2014-06-30

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Ilseon Yoo ,  Hiwon Lee ,  Soon-myung Kwon ,  Hyunsoo Kim

IPC: H01L21/50 ,  H01L21/308 ,  H01L21/306

CPC classification number: H01L21/50 ,  H01L21/185 ,  H01L21/30604 ,  H01L21/308

Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.

Abstract translation: 一种接合半导体衬底的方法包括：在第一半导体衬底上形成对准键; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第一金属层和第二金属层; 并且当所述第一半导体衬底和所述第二半导体衬底接合时，所述第一半导体衬底和所述第二半导体衬底接合所述对准键位于所述对准凹槽处。

公开(公告)号：US20150187704A1

公开(公告)日：2015-07-02

申请号：US14445653

申请日：2014-07-29

Applicant: Hyundai Motor Company

Inventor： Ilseon Yoo ,  Hiwon Lee ,  Soon-myung Kwon ,  Hyunsoo Kim

IPC: H01L23/544 ,  H01L21/311 ,  H01L21/027 ,  H01L23/00

CPC classification number: H01L23/544 ,  H01L21/0272 ,  H01L21/31133 ,  H01L21/31144 ,  H01L24/83 ,  H01L2223/54426 ,  H01L2224/83139 ,  H01L2224/83201 ,  H01L2224/83902

Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Abstract translation: 一种连接半导体衬底的方法，其可以包括：在第一半导体衬底上形成对准键; 在所述第一半导体衬底和所述对准键上形成绝缘层; 在所述绝缘层上形成第一金属层图案和第二金属层图案; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第三金属层图案和第四金属层图案; 并且提供在第一半导体衬底和第二半导体衬底接合时将对准键定位在对准凹槽处的第一半导体衬底和第二半导体衬底。

公开(公告)号：US09368373B2

公开(公告)日：2016-06-14

申请号：US14319324

申请日：2014-06-30

Applicant: Hyundai Motor Company

Inventor： Ilseon Yoo ,  Hiwon Lee ,  Soon-myung Kwon ,  Hyunsoo Kim

IPC: H01L21/50 ,  H01L21/308 ,  H01L21/306 ,  H01L21/18

CPC classification number: H01L21/50 ,  H01L21/185 ,  H01L21/30604 ,  H01L21/308

Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.

Abstract translation: 一种接合半导体衬底的方法包括：在第一半导体衬底上形成对准键; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第一金属层和第二金属层; 并且当所述第一半导体衬底和所述第二半导体衬底接合时，所述第一半导体衬底和所述第二半导体衬底接合所述对准键位于所述对准凹槽处。

公开(公告)号：US09312227B2

公开(公告)日：2016-04-12

申请号：US14445653

申请日：2014-07-29

Applicant: Hyundai Motor Company

Inventor： Ilseon Yoo ,  Hiwon Lee ,  Soon-myung Kwon ,  Hyunsoo Kim

IPC: H01L23/544 ,  H01L23/00 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L23/544 ,  H01L21/0272 ,  H01L21/31133 ,  H01L21/31144 ,  H01L24/83 ,  H01L2223/54426 ,  H01L2224/83139 ,  H01L2224/83201 ,  H01L2224/83902

Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Abstract translation: 一种连接半导体衬底的方法，其可以包括：在第一半导体衬底上形成对准键; 在所述第一半导体衬底和所述对准键上形成绝缘层; 在所述绝缘层上形成第一金属层图案和第二金属层图案; 形成第一突起和第二突起，以及位于第二半导体衬底上的第一突起和第二突起之间的对准凹槽; 在所述第一突起和所述第二突起上分别形成第三金属层图案和第四金属层图案; 并且提供在第一半导体衬底和第二半导体衬底接合时将对准键定位在对准凹槽处的第一半导体衬底和第二半导体衬底。

公开(公告)号：US20140360246A1

公开(公告)日：2014-12-11

申请号：US14092202

申请日：2013-11-27

Applicant: Hyundai Motor Company

Inventor： Soon-myung Kwon ,  Sang Gyu Park

IPC: B81B7/00

CPC classification number: H03H9/02433 ,  G01N29/022 ,  G01N29/036

Abstract: A micro-electro-mechanical-system (MEMS) resonant sensor includes: a MEMS unit that generates an output signal corresponding to a vibration component of a mass body vibratable between a first driving electrode and a second driving electrode; an automatic gain control (AGC) unit that automatically generates a comparative voltage by controlling a gain of the output signal; and a bias unit that receives a reference voltage and generates a bias voltage using the comparative voltage and the reference voltage, wherein a sinusoidal driving voltage is applied to the first driving electrode and the second driving electrode, and the bias voltage is applied to the mass body. It can maintain the amplitude of the mass body stably in the MEMS resonant sensor, and prevent malfunction of an electronic circuit by reducing a response error of the MEMS resonant sensor.

Abstract translation: 微机电系统（MEMS）谐振传感器包括：MEMS单元，其产生对应于在第一驱动电极和第二驱动电极之间可振动的质量体的振动分量的输出信号; 自动增益控制（AGC）单元，通过控制输出信号的增益自动产生比较电压; 以及偏置单元，其接收参考电压并使用比较电压和参考电压产生偏置电压，其中正弦驱动电压被施加到第一驱动电极和第二驱动电极，并且偏置电压被施加到质量 身体。 它可以在MEMS谐振传感器中稳定地保持质量体的幅度，并且通过减小MEMS谐振传感器的响应误差来防止电子电路的故障。