公开(公告)号：US20250149289A1

公开(公告)日：2025-05-08

申请号：US19012150

申请日：2025-01-07

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/305 ,  H01J37/20

Abstract: Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source 101; a sample stage 102 on which a sample to be processed by being irradiated with an unfocused ion beam from the ion source 101 is placed; and a measurement member holding unit 106 that holds an ion beam current measurement member 105. A covering material 120 is provided so as to cover at least a surface of the measurement member holding unit 106 and the sample stage 102 facing the ion source 101. A material of the covering material 120 contains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement member 105 is moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion source 101 under a first irradiation condition, and an ion beam current flowing when the ion beam current measurement member 105 is irradiated with the ion beam is measured.

公开(公告)号：US20250149288A1

公开(公告)日：2025-05-08

申请号：US18835838

申请日：2022-03-01

Applicant: Hitachi High-Tech Corporation

Inventor： Naohiro FUJITA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/244 ,  G01N23/2251 ,  H01J37/20 ,  H01J37/305

Abstract: An ion milling device includes: a first monitoring mechanism that measures an amount of sputtered particles generated by irradiating a sample with an ion beam; and a second monitoring mechanism that images a processed surface of the sample formed by irradiating the sample with the ion beam, in which processing on the sample ends when a sputtering amount of the sample estimated through measurement by the first monitoring mechanism and a shape of the processed surface image extracted from a picture captured by the second monitoring mechanism satisfy processing end conditions set for the sputtering amount and the shape of the processed surface.

公开(公告)号：US20210265130A1

公开(公告)日：2021-08-26

申请号：US17252997

申请日：2018-06-22

Applicant: Hitachi High-Tech Corporation

Inventor： Asako KANEKO ,  Hisayuki TAKASU

IPC: H01J37/20 ,  H01J37/305 ,  H01J37/08 ,  H01J37/09 ,  H01J37/147

Abstract: An ion milling device capable of high-speed milling is realized even for a specimen containing a material having an imide bond. Therefore, the ion milling device includes: a vacuum chamber 6 configured to hold a specimen 3 in a vacuum atmosphere; an ion gun 1 configured to irradiate the specimen with a non-focused ion beam 2; a vaporization container 17 configured to store a mixed solution 13 of a water-soluble ionic liquid and water; and nozzles 11, 12 configured to supply water vapor obtained by vaporizing the mixed solution to a vicinity of a surface of the specimen processed by the ion beam.

公开(公告)号：US20250046567A1

公开(公告)日：2025-02-06

申请号：US18716990

申请日：2021-12-14

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Kento HORINOUCHI

IPC: H01J37/20 ,  H01J37/09 ,  H01J37/22 ,  H01J37/304 ,  H01J37/305

Abstract: An ion milling device includes: an ion source 101 configured to emit an ion beam; a sample stage 102 configured to hold a sample 105; a shielding plate 106 configured to shield the sample from the ion beam and disposed such that an end surface P2 thereof and an end surface P1 serving as a processing surface of the sample are aligned with each other; a sample stage drive mechanism 103 configured to rotate the sample stage with a boundary between the end surface of the shielding plate and the end surface of the sample as a rotation axis R; and a control unit 109. A relative position between the ion source and the sample stage is adjusted such that a central axis B of the ion beam intersects the rotation axis. The control unit rotates the sample stage about the rotation axis using the sample stage drive mechanism until a sample protrusion amount at which the sample protrudes from the shielding plate as viewed from the ion source reaches a predetermined magnitude, and thereafter performs milling on the sample by irradiating the sample with the ion beam from the ion source.

公开(公告)号：US20250149287A1

公开(公告)日：2025-05-08

申请号：US18838013

申请日：2022-03-10

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO

IPC: H01J37/08 ,  H01J37/20 ,  H01J37/304

Abstract: A change amount of a frequency of a crystal resonator 40 per unit time is increased. An ion milling device 100 includes an ion source 20 configured to emit an ion beam, a sample stage 30 configured to allow a sample to be placed thereon, a first inclining mechanism 31 connected to the sample stage 30 and configured to adjust an inclined angle of the sample stage 30, the crystal resonator 40, an oscillation circuit 8 electrically connected to the crystal resonator 40 and configured to vibrate the crystal resonator 40 and receive a frequency output from the crystal resonator 40, a second inclining mechanism 41 connected to the crystal resonator 40 and configured to adjust an inclined angle of the crystal resonator 40, and a control unit 2. The control unit 2 is electrically connected to the ion source 20, the first inclining mechanism 31, the oscillation circuit 8, and the second inclining mechanism 41, and is configured to control operations of the ion source 20, the first inclining mechanism 31, the oscillation circuit 8, and the second inclining mechanism 41.

公开(公告)号：US20240120174A1

公开(公告)日：2024-04-11

申请号：US18273325

申请日：2021-01-22

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/305 ,  H01J37/08 ,  H01J37/24

CPC classification number: H01J37/3056 ,  H01J37/08 ,  H01J37/243

Abstract: In order to improve the processing reproducibility, an ion milling device 100 includes a sample chamber 107, a sample stage 102 that is disposed in the sample chamber on which a sample is placed, an ion source 101 that emits an unfocused ion beam toward the sample, a control unit 112 that controls an output of the ion beam, an oscillator 104 that is disposed in the sample chamber, and an oscillation circuit 111 that oscillates the oscillator and outputs an oscillation signal to the control unit, in which the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range.

公开(公告)号：US20230048299A1

公开(公告)日：2023-02-16

申请号：US17788556

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/244 ,  H01J37/08 ,  H01J37/305

Abstract: There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.
The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

公开(公告)号：US20210066020A1

公开(公告)日：2021-03-04

申请号：US16961759

申请日：2018-02-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi KAMOSHIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Toru IWAYA

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/244 ,  H01J37/147

Abstract: By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

公开(公告)号：US20250003841A1

公开(公告)日：2025-01-02

申请号：US18696487

申请日：2021-10-01

Applicant: Hitachi High-Tech Corporation

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO

IPC: G01N1/32 ,  H01J37/02

Abstract: Provided is an ion milling device capable of automatically returning to sample processing even when sample processing is interrupted due to a short circuit between an anode and a cathode. The ion milling device includes: a sample chamber 111; a sample stage 102 disposed in the sample chamber and on which a sample is placed; an ion source 101 including a first internal electrode 203 and a second internal electrode 202; a rod-shaped electrode 106 configured to be inserted into and removed from the ion source; and a power supply unit 108 connected to the first internal electrode, the second internal electrode, and the rod-shaped electrode. In a state where the rod-shaped electrode is inserted into the ion source, by the power supply unit applying a second discharge voltage between the rod-shaped electrode and the first internal electrode and the second internal electrode, the ion source generates an ion therein by a collision between an electron generated by discharge between the rod-shaped electrode and the first internal electrode or the second internal electrode and gas.

公开(公告)号：US20240258062A1

公开(公告)日：2024-08-01

申请号：US18560707

申请日：2021-05-27

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Shota AIDA ,  Hisayuki TAKASU ,  Kento HORINOUCHI

IPC: H01J37/08 ,  H01J37/04 ,  H01J37/305

CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/3053 ,  H01J2237/04735 ,  H01J2237/24585

Abstract: In a state in which an ion beam from an ion source 101 is shielded by a shutter 102, an ion milling apparatus applies a discharge voltage Vd between an anode 203 and cathodes 201 and 202 and an acceleration voltage Va between the anode and an acceleration electrode 205 with respect to the ion source, and retracts the shutter by a shutter drive source 103 to a position where the ion beam is not shielded after any one of a discharge current flowing between the anode and the cathodes due to discharge and an ion beam current flowing caused by irradiation on the shutter the ion beam falls below a predetermined reference value.