公开(公告)号：US20210066020A1

公开(公告)日：2021-03-04

申请号：US16961759

申请日：2018-02-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi KAMOSHIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Toru IWAYA

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/244 ,  H01J37/147

Abstract: By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

公开(公告)号：US20230352263A1

公开(公告)日：2023-11-02

申请号：US17791295

申请日：2020-01-29

Applicant: Hitachi High-Tech Corporation

Inventor： Kengo ASAI ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J37/302 ,  H01J2237/0822 ,  H01J2237/0815

Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.