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    Charged particle beam device
    1.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US12142457B2

    公开(公告)日：2024-11-12

    申请号：US17771551

    申请日：2020-10-06

    Applicant: Hitachi High-Tech Corporation

    Inventor： Takahiro Nishihata ,  Mayuka Osaki ,  Yuji Takagi ,  Takuma Yamamoto ,  Makoto Suzuki

    IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244

    Abstract: A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

    DEFECT DETECTION DEVICE, DEFECT DETECTION METHOD, AND DEFECT OBSERVATION DEVICE
    4.
    发明申请
    DEFECT DETECTION DEVICE, DEFECT DETECTION METHOD, AND DEFECT OBSERVATION DEVICE 有权

    公开(公告)号：US20210109035A1

    公开(公告)日：2021-04-15

    申请号：US16970451

    申请日：2018-02-27

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yuji Takagi ,  Yuko Otani

    IPC: G01N21/95 ,  G01N21/47 ,  G01N21/88 ,  G01N23/2251 ,  G01N23/203 ,  G06T7/00 ,  G06T7/70

    Abstract: The invention is to provide a defect detection device capable of using a compact optical system to detect a plurality of types of defects with high sensitivity and high speed. The defect detection device includes an irradiation system that irradiates light onto an object to be inspected; an optical system that forms scattered light produced by a light irradiation into an image; a microlens array disposed at an image plane of the optical system; an imaging element that is disposed at a position offset from the imaging plane of the optical system and that images light that passes through the microlens array; a mask image storage unit that stores a plurality of mask images generated for each type of defect or each defect direction; and a calculation unit that carries out mask processing on an image obtained from the imaging element using the plurality of mask images and carries out defect detection processing.

    Defect observation system and defect observation method for semiconductor wafer
    5.
    发明授权
    Defect observation system and defect observation method for semiconductor wafer 有权

    公开(公告)号：US10971325B2

    公开(公告)日：2021-04-06

    申请号：US16567687

    申请日：2019-09-11

    Applicant: HITACHI HIGH-TECH CORPORATION

    Inventor： Minoru Harada ,  Yuji Takagi ,  Naoaki Kondo ,  Takehiro Hirai ,  Yohei Minekawa

    IPC: H01J37/147 ,  G01N21/956 ,  G06T7/00 ,  G01N21/95 ,  G06T5/50 ,  H01L21/67 ,  H01J37/28 ,  G06T7/12

    Abstract: In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

    Sample observation device and method
    6.
    发明授权
    Sample observation device and method 有权

    公开(公告)号：US12260545B2

    公开(公告)日：2025-03-25

    申请号：US17840798

    申请日：2022-06-15

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yuki Doi ,  Naoaki Kondo ,  Minoru Harada ,  Hideki Nakayama ,  Yohei Minekawa ,  Yuji Takagi

    IPC: G06T7/00 ,  G01N21/95 ,  G06T7/73

    Abstract: In learning processing performed before sample observation processing (steps S705 to S708), the sample observation device acquires a low-picture quality learning image under a first imaging condition for each defect position indicated by defect position information, determines an imaging count of a plurality of high-picture quality learning images associated with the low-picture quality learning image for each defect position and a plurality of imaging points based on a set value of the imaging count, acquires the plurality of high-picture quality learning images under a second imaging condition (step S702), learns a high-picture quality image estimation model using the low-picture quality learning image and the plurality of high-picture quality learning images (step S703), and adjusts a parameter related to the defect detection in the sample observation processing using the high-picture quality image estimation model (step S704).

    Method, apparatus, and program for determining condition related to captured image of charged particle beam apparatus
    7.
    发明授权
    Method, apparatus, and program for determining condition related to captured image of charged particle beam apparatus 有权

    公开(公告)号：US12243711B2

    公开(公告)日：2025-03-04

    申请号：US17855888

    申请日：2022-07-01

    Applicant: Hitachi High-Tech Corporation

    Inventor： Takahiro Nishihata ,  Yuji Takagi ,  Takuma Yamamoto ,  Yasunori Goto ,  Yasutaka Toyoda

    IPC: H01J37/22 ,  G01N23/2251 ,  H01J37/28

    Abstract: A method, an apparatus, and a program for more appropriately determining a condition for appropriately recognizing a semiconductor pattern are provided. A method for determining a condition related to a captured image of a charged particle beam apparatus including: acquiring, by a processor, a plurality of captured images, each of the captured images being an image generated by irradiating a pattern formed on a wafer with a charged particle beam, and detecting electrons emitted from the pattern, each of the captured images being an image captured according to one or more imaging conditions, the method further including: acquiring teaching information for each of the captured images; acquiring, by the processor, one or more feature determination conditions; calculating, by the processor, a feature for each of the captured images based on each of the feature determination conditions, at least one of the imaging condition and the feature determination condition being plural.

    Defect observation device and defect observation method
    8.
    发明授权
    Defect observation device and defect observation method 有权

    公开(公告)号：US11087454B2

    公开(公告)日：2021-08-10

    申请号：US16493697

    申请日：2017-03-17

    Applicant: HITACHI HIGH-TECH CORPORATION

    Inventor： Naoaki Kondo ,  Minoru Harada ,  Yuji Takagi ,  Takehiro Hirai

    IPC: G06T7/00 ,  G01N21/95 ,  G01N21/956

    Abstract: A defect observation device comprising: a defect determination coordinate creation unit by which the coordinates of a plurality of second defect candidates are determined as overlapping defect candidate coordinates, the plurality of second defect candidates respectively having, in a plurality of second imaging visual field regions overlapping a first imaging visual field region, a circuit pattern which partly overlaps a circuit pattern in the first imaging visual field region, in which a first defect candidate for defect determination among a plurality of defect candidates of a sample is present; a pseudo-reference image generation unit which generates a pseudo-reference image including a circuit pattern of the first defect candidate by superimposing a plurality of images respectively captured at the plurality of overlapping defect candidate coordinates; and a defect determination unit which compares an image for defect determination captured at the coordinates of the first defect candidate with the pseudo-reference image to determine the presence or absence of a defect in the image for defect determination.

    SAMPLE OBSERVATION DEVICE AND METHOD
    9.
    发明申请
    SAMPLE OBSERVATION DEVICE AND METHOD 有权

    公开(公告)号：US20220405905A1

    公开(公告)日：2022-12-22

    申请号：US17840798

    申请日：2022-06-15

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yuki Doi ,  Naoaki Kondo ,  Minoru Harada ,  Hideki Nakayama ,  Yohei Minekawa ,  Yuji Takagi

    IPC: G06T7/00 ,  G06T7/73 ,  G01N21/95

    Abstract: In learning processing performed before sample observation processing (steps S705 to S708), the sample observation device acquires a low-picture quality learning image under a first imaging condition for each defect position indicated by defect position information, determines an imaging count of a plurality of high-picture quality learning images associated with the low-picture quality learning image for each defect position and a plurality of imaging points based on a set value of the imaging count, acquires the plurality of high-picture quality learning images under a second imaging condition (step S702), learns a high-picture quality image estimation model using the low-picture quality learning image and the plurality of high-picture quality learning images (step S703), and adjusts a parameter related to the defect detection in the sample observation processing using the high-picture quality image estimation model (step S704).

    Measurement device, method and display device
    10.
    发明授权
    Measurement device, method and display device 有权

    公开(公告)号：US10996569B2

    公开(公告)日：2021-05-04

    申请号：US16070708

    申请日：2016-01-27

    Applicant: HITACHI HIGH-TECH CORPORATION

    Inventor： Yuji Takagi ,  Fumihiko Fukunaga ,  Yasunori Goto

    IPC: G06K9/00 ,  G03F7/20 ,  H01J37/22 ,  G06K9/62 ,  G06T7/00 ,  H01L23/544

    Abstract: An overlay measurement method using a reference image is an effective method for an overlay measurement in a product circuit. However, there is a problem that it is not possible to obtain an ideal reference image in a process of prototyping.
    A measurement device described in a specific embodiment of the present invention includes an imaging unit that captures an image of a circuit pattern of a semiconductor wafer surface by an optical microscope or an electronic microscope, a pattern recognition unit that extracts a first pattern and a second pattern from the image captured by the imaging unit, a reference image generation unit that synthesizes a first reference image using the first pattern extracted from a plurality of the images and synthesizes a second reference image using the second pattern extracted from the plurality of images, a quantification unit that quantifies a first difference that is a difference between the first reference image and the first pattern and a second difference that is a difference between the second reference image and the second pattern, and a calculation unit that calculates an overlay amount included in the circuit pattern using the first difference and the second difference.

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