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公开(公告)号：US09741627B2
公开(公告)日：2017-08-22
申请号：US14766981
申请日：2014-01-21
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: C23F1/00 , H01L21/306 , H01L21/66 , H01L21/67 , H01J37/32 , H01L21/3065 , G01N1/32
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
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公开(公告)号：US20150357249A1
公开(公告)日：2015-12-10
申请号：US14766981
申请日：2014-01-21
Applicant: IAS INC.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: H01L21/66 , H01L21/67 , H01L21/3065
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
Abstract translation: 本发明提供一种蚀刻装置，适用于蚀刻构成基板的基板或体硅上的多晶硅。 本发明涉及一种蚀刻装置，其包括气体流动调节装置，其允许蚀刻气体从基板的周边流动到基板的大致中心，并且涉及能够以均匀的方式蚀刻多晶硅或体硅的技术 在整个基板表面上的厚度。 此外，气体流量调节装置以可垂直移动的方式安装，并且可以通过气流调节装置的调节来控制蚀刻速度。
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公开(公告)号：US20210118751A1
公开(公告)日：2021-04-22
申请号：US17043964
申请日：2019-04-08
Applicant: Kioxia Corporation , IAS Inc.
Inventor： Jiahong Wu , Katsuhiko Kawabata , Mitsumasa Ikeuchi , Sungjae Lee
IPC: H01L21/66 , H01L21/02 , H01L21/3213 , C30B33/08 , C30B29/06
Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
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Patent Agency Ranking
公开(公告)号：US20190013248A1
公开(公告)日：2019-01-10
申请号：US15750566
申请日：2016-10-25
Applicant: IAS INC.
Inventor： Katsuhiko Kawabata , Sungjae Lee , Tatsuya Ichinose
Abstract: Provided is a nozzle for substrate analysis with a simple structure, which enables analysis to be reliably performed without leaking an analysis liquid when a substrate having high hydrophilicity is scanned with the analysis liquid. The nozzle for analysis of a substrate according to the present invention includes: a double pipe including a nozzle main body that discharges and suctions an analysis liquid, and an outer pipe disposed on the outer periphery of the nozzle main body so as to surround the scanning analysis liquid; exhaust means having an exhaust path between the nozzle main body and the outer pipe; and a gas spraying pipe for spraying an inert gas to the tip of the nozzle main body in a direction substantially parallel to a substrate surface, the gas spraying pipe being disposed on the outer periphery of the tip of the outer pipe and on a side opposite to a scanning direction of the nozzle.
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公开(公告)号：US11837510B2
公开(公告)日：2023-12-05
申请号：US17043964
申请日：2019-04-08
Applicant: Kioxia Corporation , IAS Inc.
Inventor： Jiahong Wu , Katsuhiko Kawabata , Mitsumasa Ikeuchi , Sungjae Lee
IPC: H01L21/66 , C30B29/06 , C30B33/08 , G01N27/62 , G01N1/32 , G01N27/623 , H01L21/02 , H01L21/3213
CPC classification number: H01L22/10 , C30B29/06 , C30B33/08 , G01N27/62 , H01L21/0262 , H01L21/32134
Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
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公开(公告)号：US11422071B2
公开(公告)日：2022-08-23
申请号：US17415191
申请日：2019-11-06
Applicant: IAS, INC.
Inventor： Katsuhiko Kawabata , Sungjae Lee , Takuma Hayashi
Abstract: A substrate analysis method using a nozzle for substrate analysis which discharges an analysis liquid from a tip thereof, scans a substrate surface with a discharged analysis liquid, and sucks the analysis liquid. This is done by arranging a liquid catch plate that catches the discharged analysis liquid, thus retaining analysis liquid discharged between the nozzle tip and the liquid catch plate; positioning the substrate so that the end part thereof can be inserted between the nozzle tip and the liquid catch plate; bringing the end part of the substrate into contact with analysis liquid retained between the nozzle tip and liquid catch plate; and moving the nozzle and liquid catch plate concurrently along a periphery of the substrate, while keeping the end part of the substrate in contact with the analysis liquid, to analyze the end part of the substrate.
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公开(公告)号：US10688485B2
公开(公告)日：2020-06-23
申请号：US15780925
申请日：2017-07-18
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Sungjae Lee
Abstract: The present invention provides a substrate analysis nozzle that reliably prevents a leakage (release) of analysis solution from the nozzle even in the case of a highly hydrophilic substrate and that collects the analysis solution with a high collection ratio after scanning. The present invention is directed to a substrate analysis nozzle configured to discharge an analysis solution from a tip of the substrate analysis nozzle onto a substrate, configured to scan a surface of the substrate using the discharged analysis solution, and configured to suck the analysis solution. The substrate analysis nozzle has a triple-tube structure made up of: a pipe through which the analysis solution is discharged and sucked; a first outer tube surrounding the pipe and surrounding the analysis solution used for scanning; and a second outer tube surrounding the first outer tube. The substrate analysis nozzle includes: first exhausting means including an exhaust path defined between the pipe and the first outer tube; and second exhausting means including an exhaust path defined between the first outer tube and the second outer tube.
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公开(公告)号：US20190358622A1
公开(公告)日：2019-11-28
申请号：US15780925
申请日：2017-07-18
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Sungjae Lee
Abstract: The present invention provides a substrate analysis nozzle that reliably prevents a leakage (release) of analysis solution from the nozzle even in the case of a highly hydrophilic substrate and that collects the analysis solution with a high collection ratio after scanning. The present invention is directed to a substrate analysis nozzle configured to discharge an analysis solution from a tip of the substrate analysis nozzle onto a substrate, configured to scan a surface of the substrate using the discharged analysis solution, and configured to suck the analysis solution. The substrate analysis nozzle has a triple-tube structure made up of: a pipe through which the analysis solution is discharged and sucked; a first outer tube surrounding the pipe and surrounding the analysis solution used for scanning; and a second outer tube surrounding the first outer tube. The substrate analysis nozzle includes: first exhausting means including an exhaust path defined between the pipe and the first outer tube; and second exhausting means including an exhaust path defined between the first outer tube and the second outer tube.
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