公开(公告)号：US12196589B2

公开(公告)日：2025-01-14

申请号：US18065394

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Christian Bretthauer ,  Wolfgang Klein ,  Ulrich Krumbein ,  David Tumpold

IPC: G01F1/86 ,  G01F1/688

Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.

公开(公告)号：US20240158224A1

公开(公告)日：2024-05-16

申请号：US18540253

申请日：2023-12-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geißler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US11953481B2

公开(公告)日：2024-04-09

申请号：US17647651

申请日：2022-01-11

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Cecilia Carbonelli ,  Ulrich Krumbein

IPC: G01N33/00 ,  G01N27/12 ,  G01N27/02 ,  G01N27/22

CPC classification number: G01N33/0006 ,  G01N27/12 ,  G01N33/0008 ,  G01N33/0027 ,  G01N33/0034 ,  G01N27/028 ,  G01N2027/222

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

公开(公告)号：US11679461B2

公开(公告)日：2023-06-20

申请号：US17681848

申请日：2022-02-28

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Reinhard Gabl ,  Ulrich Krumbein

IPC: B23Q3/18 ,  H04R7/18 ,  H04R17/00 ,  H04R19/00 ,  H04R31/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B23Q3/18 ,  B81B3/0072 ,  B81C1/00158 ,  H04R7/18 ,  H04R17/00 ,  H04R19/005 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  H01L2924/1461 ,  H04R2201/003 ,  H04R2307/207 ,  H04R2499/11

Abstract: A structure for fixing a membrane to a carrier including a carrier; a suspended structure; and a holding structure with a rounded concave shape which is configured to fix the suspended structure to the carrier and where a tapered side of the holding structure physically connects to the suspended structure is disclosed. A method of forming the holding structure on a carrier to support a suspended structure is further disclosed. The method may include: forming a holding structure on a carrier; forming a suspended structure on the holding structure; shaping the holding structure such that it has a concave shape; and arranging the holding structure such that a tapered side of the holding structure physically connects to the suspended structure.

公开(公告)号：US20210139319A1

公开(公告)日：2021-05-13

申请号：US17151392

申请日：2021-01-18

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  H04R31/00 ,  B81B3/00 ,  H04R1/08 ,  B81B7/02 ,  H04R7/08 ,  H04R7/02

Abstract: A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

公开(公告)号：US20190084827A1

公开(公告)日：2019-03-21

申请号：US16134355

申请日：2018-09-18

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Ulrich Krumbein ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Juergen Wagner ,  Arnaud Walther

IPC: B81B7/02 ,  H04R19/00 ,  H04R19/04

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  H04R1/2807 ,  H04R19/005 ,  H04R19/04

Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state

公开(公告)号：US20160221822A1

公开(公告)日：2016-08-04

申请号：US14613106

申请日：2015-02-03

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Alfons Dehe

IPC: B81B7/00 ,  H04R23/00 ,  B81C1/00

CPC classification number: H04R23/00 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/015 ,  H04R17/02 ,  H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.

Abstract translation: 根据实施例，换能器包括集成在单个管芯上的微加工元件和耦合到微加工元件的接口IC。 微制造元件包括声换能器和温度传感器，并且接口IC电耦合到声换能器和温度传感器。

公开(公告)号：US11899001B2

公开(公告)日：2024-02-13

申请号：US16692489

申请日：2019-11-22

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Ulrich Krumbein

IPC: G01N33/00 ,  G01N27/414 ,  G06F1/3203

CPC classification number: G01N33/0006 ,  G01N27/4146 ,  G01N33/0008 ,  G01N33/0062 ,  G01N33/0073 ,  G06F1/3203 ,  G01N2033/0068

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.

公开(公告)号：US20210053821A1

公开(公告)日：2021-02-25

申请号：US16543970

申请日：2019-08-19

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R31/00 ,  H04R7/08

Abstract: A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

公开(公告)号：US20210040942A1

公开(公告)日：2021-02-11

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B43/04 ,  F04B53/10

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.