公开(公告)号：US20240063180A1

公开(公告)日：2024-02-22

申请号：US17891654

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Kimin Jun ,  Adel Elsherbini ,  Omkar Karhade ,  Bhaskar Jyoti Krishnatreya ,  Mohammad Enamul Kabir ,  Jiraporn Seangatith ,  Tushar Talukdar ,  Shawna Liff ,  Johanna Swan ,  Feras Eid

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/48 ,  H01L23/13 ,  H01L23/31

CPC classification number: H01L25/0652 ,  H01L25/50 ,  H01L21/4857 ,  H01L23/13 ,  H01L23/3185 ,  H01L24/05

Abstract: Quasi-monolithic multi-die composites including a primary fill structure within a space between adjacent IC dies. A fill material layer, which may have inorganic composition, may be bonded to a host substrate and patterned to form a primary fill structure that occupies a first portion of the host substrate. IC dies may be bonded to regions of the host substrate within openings where the primary fill structure is absent to have a spatial arrangement complementary to the primary fill structure. The primary fill structure may have a thickness substantially matching that of IC dies and/or be co-planar with a surface of one or more of the IC dies. A gap fill material may then be deposited within remnants of the openings to form a secondary fill structure that occupies space between the IC dies and the primary fill structure.

公开(公告)号：US20240061194A1

公开(公告)日：2024-02-22

申请号：US17821019

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  David Hui ,  Haris Khan Niazi ,  Wenhao Li ,  Bhaskar Jyoti Krishnatreya ,  Henning Braunisch ,  Shawna M. Liff ,  Jiraporn Seangatith ,  Johanna M. Swan ,  Krishna Vasanth Valavala ,  Xavier Francois Brun ,  Feras Eid

IPC: G02B6/42

CPC classification number: G02B6/4274 ,  G02B6/4204

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include an interconnect die in a first layer surrounded by a dielectric material; a processor integrated circuit (processor IC) and an integrated circuit (IC) in a second layer, the second layer on the first layer, wherein the interconnect die is electrically coupled to the processor IC and the IC by first interconnects having a pitch of less than 10 microns between adjacent first interconnects; a photonic integrated circuit (PIC) and a substrate in a third layer, the third layer on the second layer, wherein the PIC has an active surface, and wherein the active surface of the PIC is coupled to the IC by second interconnects having a pitch of less than 10 microns between adjacent second interconnects; and a fiber connector optically coupled to the active surface of the PIC.

公开(公告)号：US20240063142A1

公开(公告)日：2024-02-22

申请号：US17891666

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Wenhao Li ,  Bhaskar Jyoti Krishnatreya ,  Tushar Talukdar ,  Botao Zhang ,  Yi Shi ,  Haris Khan Niazi ,  Feras Eid ,  Nagatoshi Tsunoda ,  Xavier Brun ,  Mohammad Enamul Kabir ,  Omkar Karhade ,  Shawna Liff ,  Jiraporn Seangatith

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L23/562 ,  H01L23/367 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/49838 ,  H01L21/486 ,  H01L21/565 ,  H01L25/0655 ,  H01L25/50

Abstract: Multi-die packages including IC die crack mitigation features. Prior to the bonding of IC dies to a host substrate, the IC dies may be shaped, for example with a corner radius or chamfer. After bonding the shaped IC dies, a fill comprising at least one inorganic material may be deposited over the IC dies, for example to backfill a space between adjacent IC dies. With the benefit of a greater IC die sidewall slope and/or smoother surface topology associated with the shaping process, occurrences of stress cracking within the fill and concomitant damage to the IC dies may be reduced. Prior to depositing a fill, a barrier layer may be deposited over the IC die to prevent cracks that might form in the fill material from propagating into the IC die.

公开(公告)号：US20230285999A1

公开(公告)日：2023-09-14

申请号：US17694302

申请日：2022-03-14

Applicant: Intel Corporation

Inventor： Wenhao Li ,  Feras Eid ,  Paul Diglio ,  Jiraporn Seangatith

IPC: B05B7/14 ,  B05B7/16

CPC classification number: B05B7/1486 ,  B05B7/1626

Abstract: Cold-spray nozzles, systems, and techniques are described herein related to manufacturing implementations of efficient film deposition. A deposition system includes multiple feed systems to deliver solid powder materials at controlled feed rates and temperatures, and a nozzle, including convergent and divergent sections and connections to the feed systems, to receive a carrier fluid in the convergent section and to spray the carrier fluid and the solid powder materials out of the divergent section. A nozzle includes multiple ports to receive solid powder materials for admission into a carrier fluid, with one or more ports in the convergent section and one or more ports in the divergent section. A method may include delivering a carrier fluid to a nozzle, heating multiple solid powder materials, delivering these solid powder materials to the nozzle, and spraying the solid powder materials out of a divergent section of the nozzle.

公开(公告)号：US09659899B2

公开(公告)日：2017-05-23

申请号：US14796759

申请日：2015-07-10

Applicant: INTEL CORPORATION

Inventor： Sandeep B. Sane ,  Shankar Ganapathysubramanian ,  Jorge Sanchez ,  Leonel R. Arana ,  Eric J. Li ,  Nitin A. Deshpande ,  Jiraporn Seangatith ,  Poh Chieh Benny Poon

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC classification number: H01L24/32 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/89 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3213 ,  H01L2224/32225 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73253 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/161 ,  H01L2924/16251 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014

Abstract: Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.

公开(公告)号：US20150318258A1

公开(公告)日：2015-11-05

申请号：US14796759

申请日：2015-07-10

Applicant: INTEL CORPORATION

Inventor： SANDEEP B. SANE ,  Shankar Ganapathysubramanian ,  Jorge Sanchez ,  Leonel R. Arana ,  Eric J. Li ,  Nitin A. Deshpande ,  Jiraporn Seangatith ,  Poh Chieh Benny Poon

IPC: H01L23/00

CPC classification number: H01L24/32 ,  H01L23/562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/89 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3213 ,  H01L2224/32225 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/73253 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/161 ,  H01L2924/16251 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014

Abstract: Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.

Abstract translation: 控制模具翘曲，用于组装薄模具。 在一个示例中，半导体管芯具有背侧和与背面相对的前侧。 背面具有半导体衬底，并且前侧具有在前侧层上形成在半导体衬底上的部件。 在半导体管芯的背面形成有背面层，以在管芯被加热时抵抗管芯的翘曲，并且在管芯的前侧形成多个接触件以附着到衬底上。

公开(公告)号：US20240063132A1

公开(公告)日：2024-02-22

申请号：US17820993

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Scott E. Siers ,  Gerald S. Pasdast ,  Johanna M. Swan ,  Henning Braunisch ,  Kimin Jun ,  Jiraporn Seangatith ,  Shawna M. Liff ,  Mohammad Enamul Kabir ,  Sathya Narasimman Tiagaraj

IPC: H01L23/538 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/5386 ,  H01L24/08 ,  H01L24/16 ,  H01L24/80 ,  H01L24/05 ,  H01L25/0652 ,  H01L25/0657 ,  H01L23/5383 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/16225 ,  H01L2224/08145 ,  H01L2224/08121 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2924/37001 ,  H01L2924/3841 ,  H01L2924/3512

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies, adjacent layers in the plurality of layers being coupled together by first interconnects and a package substrate coupled to the plurality of layers by second interconnects. A first layer in the plurality of layers comprises a dielectric material surrounding a first IC die in the first layer, a second layer in the plurality of layers is adjacent and non-coplanar with the first layer, the second layer comprises a first circuit region and a second circuit region separated by a third circuit region, the first circuit region and the second circuit region are bounded by respective guard rings, and the first IC die comprises conductive pathways conductively coupling conductive traces in the first circuit region with conductive traces in the second circuit region.

公开(公告)号：US20240063091A1

公开(公告)日：2024-02-22

申请号：US17891735

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Feras Eid ,  Scot Kellar ,  Yoshihiro Tomita ,  Rajiv Mongia ,  Kimin Jun ,  Shawna Liff ,  Wenhao Li ,  Johanna Swan ,  Bhaskar Jyoti Krishnatreya ,  Debendra Mallik ,  Krishna Vasanth Valavala ,  Lei Jiang ,  Xavier Brun ,  Mohammad Enamul Kabir ,  Haris Khan Niazi ,  Jiraporn Seangatith ,  Thomas Sounart

IPC: H01L23/473 ,  H01L23/00 ,  H01L25/065 ,  H01L23/367 ,  H01L23/373

CPC classification number: H01L23/473 ,  H01L24/08 ,  H01L25/0652 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3677 ,  H01L23/3675 ,  H01L23/3732 ,  H01L23/3738 ,  H01L2924/3511 ,  H01L2224/08145 ,  H01L2224/08121 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/182 ,  H01L2924/186

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.

公开(公告)号：US20240063072A1

公开(公告)日：2024-02-22

申请号：US17891530

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Shawna Liff ,  Kimin Jun ,  Veronica Strong ,  Aleksandar Aleksov ,  Jiraporn Seangatith ,  Mohammad Enamul Kabir ,  Johanna Swan ,  Tushar Talukdar ,  Omkar Karhade

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/498 ,  H01L21/56 ,  H01L23/29

CPC classification number: H01L23/3135 ,  H01L25/0652 ,  H01L25/0655 ,  H01L23/49816 ,  H01L23/49838 ,  H01L21/568 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/291 ,  H01L24/08

Abstract: Composite integrated circuit (IC) device processing, including selective removal of inorganic dielectric material. Inorganic dielectric material may be deposited, modified with laser exposure, and selectively removed. Laser exposure parameters may be adjusted using surface topography measurements. Inorganic dielectric material removal may reduce surface topography. Vias and trenches of varying size, shape, and depth may be concurrently formed without an etch-stop layer. A composite IC device may include an IC die, a conductive via, and a conductive line adjacent a compositionally homogenous inorganic dielectric material.

公开(公告)号：US20230271445A1

公开(公告)日：2023-08-31

申请号：US17680839

申请日：2022-02-25

Applicant: Intel Corporation

Inventor： Feras Eid ,  Wenhao Li ,  Jiraporn Seangatith ,  Paul Diglio ,  Xavier Brun

IPC: B41N1/24

CPC classification number: B41N1/248

Abstract: Reusable composite stencils for spray processes, particularly for spray processes used in the fabrication of integrated circuit devices, may be fabricated having a permanent core and at least one sacrificial material layer. Thus, in operation, when a predetermined amount of the sacrificial material layer has been ablated away by a material being sprayed in the spray process, the remaining sacrificial material layer may be removed and reapplied to its original thickness. Therefore, the permanent core, which is usually expensive and/or difficult to fabricate, may be repeatedly reused.