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    Heated pins to couple with solder elements
    2.
    发明授权
    Heated pins to couple with solder elements 有权

    公开(公告)号：US11830846B2

    公开(公告)日：2023-11-28

    申请号：US16424227

    申请日：2019-05-28

    Applicant: Intel Corporation

    Inventor： Feroz Mohammad ,  Srinivasa R. Aravamudhan

    IPC: H01L23/498 ,  H01L23/00 ,  H01L23/34

    CPC classification number: H01L24/81 ,  H01L23/345 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/98 ,  H01L2224/16238 ,  H01L2224/81234 ,  H01L2224/81815

    Abstract: Embodiments herein relate to systems, apparatuses, or processes for coupling or decoupling two substrates by heating pins on one of the substrates and either inserting or withdrawing the heated pins from solder elements on a BGA. In particular, by heating a plurality of pins on a first side of a first substrate, where the plurality of pins are substantially perpendicular to a plane of the substrate, inserting the heated plurality of pins into BGA attached to a second substrate where the BGA includes a plurality of solder elements aligned with the plurality of pins and where the heated plurality of pins melt the plurality of solder elements upon insertion. The inserted plurality of pins physically and/or electrically couple the first substrate and the second substrate.

    DUAL-SIDED SOCKET DEVICE WITH CORRUGATION STRUCTURES AND SHIELD STRUCTURES
    3.
    发明申请
    DUAL-SIDED SOCKET DEVICE WITH CORRUGATION STRUCTURES AND SHIELD STRUCTURES 有权

    公开(公告)号：US20220102892A1

    公开(公告)日：2022-03-31

    申请号：US17032587

    申请日：2020-09-25

    Applicant: Intel Corporation

    Inventor： Srikant Nekkanty ,  Steven Klein ,  Feroz Mohammad ,  Joe Walczyk ,  Kuang Liu ,  Zhichao Zhang

    IPC: H01R13/11 ,  H05K1/02 ,  H05K9/00

    Abstract: Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

    DUAL-SIDED SOCKET DEVICE WITH CORRUGATION STRUCTURES
    4.
    发明申请
    DUAL-SIDED SOCKET DEVICE WITH CORRUGATION STRUCTURES 有权

    公开(公告)号：US20220102883A1

    公开(公告)日：2022-03-31

    申请号：US17032595

    申请日：2020-09-25

    Applicant: Intel Corporation

    Inventor： Srikant Nekkanty ,  Steven Klein ,  Feroz Mohammad

    IPC: H01R12/71 ,  H01R43/26

    Abstract: Techniques and mechanisms for coupling packaged devices with a dual-sided socket device. In an embodiment, two interfaces of the socket device comprise, respectively, first metallization structures and second metallization structures on opposite sides of a socket body structure. The first metallization structures each form a respective corrugation structure to electrically couple with a corresponding conductive contact of a first packaged device. The corrugation structures facilitate such electrical coupling each via a vertical wipe of the corresponding conductive contact. In another embodiment, a pitch of the first metallization structures is in a range of between 0.1 millimeters (mm) and 2 mm. One such metallization structure has a vertical span in a range of between 0.05 mm and 2.0 mm, where a portion of a side of the metallization structure forms a corrugation structure, and has a horizontal span which is at least 5% of the vertical span.

    Dual-sided socket device with corrugation structures
    5.
    发明授权
    Dual-sided socket device with corrugation structures 有权

    公开(公告)号：US11916322B2

    公开(公告)日：2024-02-27

    申请号：US17032595

    申请日：2020-09-25

    Applicant: Intel Corporation

    Inventor： Srikant Nekkanty ,  Steven Klein ,  Feroz Mohammad

    IPC: H01R12/71 ,  H01R43/26

    CPC classification number: H01R12/714 ,  H01R43/26

    Abstract: Techniques and mechanisms for coupling packaged devices with a dual-sided socket device. In an embodiment, two interfaces of the socket device comprise, respectively, first metallization structures and second metallization structures on opposite sides of a socket body structure. The first metallization structures each form a respective corrugation structure to electrically couple with a corresponding conductive contact of a first packaged device. The corrugation structures facilitate such electrical coupling each via a vertical wipe of the corresponding conductive contact. In another embodiment, a pitch of the first metallization structures is in a range of between 0.1 millimeters (mm) and 2 mm. One such metallization structure has a vertical span in a range of between 0.05 mm and 2.0 mm, where a portion of a side of the metallization structure forms a corrugation structure, and has a horizontal span which is at least 5% of the vertical span.

    ELECTRONIC SOCKET PIN FOR SELF-RETENTION TO A CONDUCTIVE INTERPOSER
    6.
    发明申请
    ELECTRONIC SOCKET PIN FOR SELF-RETENTION TO A CONDUCTIVE INTERPOSER 有权

    公开(公告)号：US20220069532A1

    公开(公告)日：2022-03-03

    申请号：US17008979

    申请日：2020-09-01

    Applicant: Intel Corporation

    Inventor： Feroz Mohammad ,  Steven Klein ,  Srikant Nekkanty

    IPC: H01R33/76 ,  H01L23/498 ,  H01L23/32

    Abstract: An integrated circuit assembly may be formed comprising an electronic socket having at least one conductive pin, wherein a portion of the conductive pin extends from the electronic socket. The integrated circuit assembly further comprises a conductive interposer including at least one conductive via having a conductive layer on a sidewall thereof. The conductive interposer is abutted against the electronic socket, such that the at least one conductive pin is inserted into the at least one conductive via and is biased against the conductive layer of the at least one conductive via. In further embodiments, an integrated circuit package may be electrically attached to the conductive interposer.

    Dual-sided socket device with corrugation structures and shield structures
    8.
    发明授权
    Dual-sided socket device with corrugation structures and shield structures 有权

    公开(公告)号：US12009612B2

    公开(公告)日：2024-06-11

    申请号：US17032587

    申请日：2020-09-25

    Applicant: Intel Corporation

    Inventor： Srikant Nekkanty ,  Steven Klein ,  Feroz Mohammad ,  Joe Walczyk ,  Kuang Liu ,  Zhichao Zhang

    IPC: H01R13/11 ,  H05K1/02 ,  H05K9/00

    CPC classification number: H01R13/11 ,  H05K1/0213 ,  H05K9/0022

    Abstract: Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

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