MOTION SENSOR ROBUSTNESS UTILIZING A ROOM-TEMPERATURE-VOLCANIZING MATERIAL VIA A SOLDER RESIST DAM

    公开(公告)号:US20230089623A1

    公开(公告)日:2023-03-23

    申请号:US17737582

    申请日:2022-05-05

    Abstract: Improving motion sensor robustness utilizing a room-temperature-volcanizing (RTV) material via a solder resist dam is presented herein. A sensor package comprises: a first semiconductor die; a second semiconductor die that is attached to the first semiconductor die to form a monolithic die; and a substrate comprising a top portion and a bottom portion, in which the top portion comprises a plurality of solder resist dams, the monolithic die is attached to the top portion of the substrate via the RTV material being disposed in a defined area of the top portion of the substrate, and the bottom portion of the substrate comprises electrical terminals that facilitate attachment and electrical coupling of signals of the sensor package to a printed circuit board.

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