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公开(公告)号：US20240015447A1
公开(公告)日：2024-01-11
申请号：US18371488
申请日：2023-09-22
Applicant: InvenSense, Inc.
Inventor： Roberto Brioschi , Kazunori Hayata , Jr-Cheng Yeh , Dinesh Kumar Solanki
CPC classification number: H04R19/04 , B81B7/0064 , B81C1/00333 , H04R1/04 , H04R3/00 , B81B2201/0257 , H04R2201/003 , B81B2201/0292 , B81B2201/0271 , B81B2203/0127 , B81B2207/015 , B81C2203/0109 , B81B2201/0264
Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.
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公开(公告)号：US12133049B2
公开(公告)日：2024-10-29
申请号：US18371488
申请日：2023-09-22
Applicant: InvenSense, Inc.
Inventor： Roberto Brioschi , Kazunori Hayata , Jr-Cheng Yeh , Dinesh Kumar Solanki
CPC classification number: H04R19/04 , B81B7/0064 , B81C1/00333 , H04R1/04 , H04R3/00 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0127 , B81B2207/015 , B81C2203/0109 , H04R2201/003
Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.
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公开(公告)号：US11800297B2
公开(公告)日：2023-10-24
申请号：US17494120
申请日：2021-10-05
Applicant: INVENSENSE, INC.
Inventor： Roberto Brioschi , Kazunori Hayata , JR-Cheng Yeh , Dinesh Kumar Solanki
CPC classification number: H04R19/04 , B81B7/0064 , B81C1/00333 , H04R1/04 , H04R3/00 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0127 , B81B2207/015 , B81C2203/0109 , H04R2201/003
Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.
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Patent Agency Ranking
公开(公告)号：US20220191624A1
公开(公告)日：2022-06-16
申请号：US17494120
申请日：2021-10-05
Applicant: INVENSENSE, INC.
Inventor： Roberto Brioschi , Kazunori Hayata , JR-Cheng Yeh , Dinesh Kumar Solanki
Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.
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公开(公告)号：US11012790B2
公开(公告)日：2021-05-18
申请号：US16543076
申请日：2019-08-16
Applicant: INVENSENSE, INC.
Inventor： Jeremy Parker , Kazunori Hayata
Abstract: A system and method for the manufacture of flipchip microelectromechanical system devices. A method comprises forming a cavity from a first surface of a rigid back through to a second surface of the rigid back, depositing an anisotropic conductive film over the first surface of the multilayer rigid back to conform to a contour of a microelectromechanical system device, positioning the a microelectromechanical system device over the cavity formed in the multilayered rigid back, and causing contact of the microelectromechanical system device with the anisotropic conductive film deposited over the first surface of the multilayer rigid back.
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公开(公告)号：US11760627B2
公开(公告)日：2023-09-19
申请号：US17343919
申请日：2021-06-10
Applicant: InvenSense, Inc.
Inventor： Roberto Brioschi , Benyamin Gholami Bazehhour , Milena Vujosevic , Kazunori Hayata
CPC classification number: B81B7/0048 , B81C1/00325 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/042 , B81B2207/012
Abstract: A microelectromechanical system (MEMS) sensor package includes a laminate that provides physical support and electrical connection to a MEMS sensor. A resin layer is embedded within an opening of the laminate and a MEMS support layer is embedded within the opening by the resin layer. A MEMS structure of the MEMS sensor is located on the upper surface of the MEMS support layer.
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公开(公告)号：US20220396472A1
公开(公告)日：2022-12-15
申请号：US17343919
申请日：2021-06-10
Applicant: InvenSense, Inc.
Inventor： Roberto Brioschi , Benyamin Gholami Bazehhour , Milena Vujosevic , Kazunori Hayata
Abstract: A microelectromechanical system (MEMS) sensor package includes a laminate that provides physical support and electrical connection to a MEMS sensor. A resin layer is embedded within an opening of the laminate and a MEMS support layer is embedded within the opening by the resin layer. A MEMS structure of the MEMS sensor is located on the upper surface of the MEMS support layer.
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公开(公告)号：US20200059737A1
公开(公告)日：2020-02-20
申请号：US16543076
申请日：2019-08-16
Applicant: INVENSENSE, INC.
Inventor： Jeremy Parker , Kazunori Hayata
Abstract: A system and method for the manufacture of flipchip microelectromechanical system devices. A method comprises forming a cavity from a first surface of a rigid back through to a second surface of the rigid back, depositing an anisotropic conductive film over the first surface of the multilayer rigid back to conform to a contour of a microelectromechanical system device, positioning the a microelectromechanical system device over the cavity formed in the multilayered rigid back, and causing contact of the microelectromechanical system device with the anisotropic conductive film deposited over the first surface of the multilayer rigid back.
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