公开(公告)号：US20160079028A1

公开(公告)日：2016-03-17

申请号：US14488862

申请日：2014-09-17

Applicant: Kaveh Bakhtari

Inventor： Kaveh Bakhtari

IPC: H01J33/04

CPC classification number: H01J33/04 ,  H01J1/16 ,  H01J33/00

Abstract: An electron beam emitter comprises an electron emission source capable of emitting electrons; a vacuum chamber containing the electron emission source; and a transmission window that keeps airtightness of the vacuum chamber and is capable of transmitting the electrons from the electron emission source. The transmission window includes a foil that transmits the electrons and a grid that does not transmit the electrons. The electron emission source includes an emission portion that emits the electrons and a non-emission portion that does not emit the electrons. The emission portion has a lower work function than the non-emission portion. The non-emission portion is prepared so as to prevent the electrons from reaching the grid.

Abstract translation: 电子束发射器包括能够发射电子的电子发射源; 包含电子发射源的真空室; 以及保持真空室的气密并且能够从电子发射源透射电子的透射窗。 透射窗包括传递电子的箔和不透射电子的栅格。 电子发射源包括发射电子的发射部分和不发射电子的非发射部分。 发光部的功函数比非发光部低。 制备非发射部分以防止电子到达电网。

公开(公告)号：US20130284587A1

公开(公告)日：2013-10-31

申请号：US13993594

申请日：2011-12-16

Applicant: Kaveh Bakhtari

Inventor： Kaveh Bakhtari

IPC: B01J19/08

CPC classification number: B01J19/085 ,  C01B13/10 ,  H01J3/02 ,  H01J33/00 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32816

Abstract: This invention proposes, among other things, systems and methods for providing ozone generators or plasma generators that generate an electric field in an electron generation chamber that is separate from a reaction chamber. An electron beam emitter in an electron generation chamber is configured to emit a beam of electrons and is separated from the reaction chamber by an electron permeable barrier that provides a window through which the beam of electrons passes. The electrons are accelerated to the required energy in the electron generation chamber and transmitted through the barrier to the reaction chamber, where an input gas source introduces an input gas into the reaction chamber. The input gas may react with the beam of electrons inside the reaction chamber to form an output gas comprising a plasma or a concentration of ozone, and the output gas passes from the reaction chamber to a wafer processing chamber.

Abstract translation: 本发明尤其提出了用于提供在与反应室分离的电子发生室中产生电场的臭氧发生器或等离子体发生器的系统和方法。 电子发生室中的电子束发射器被配置为发射电子束，并且通过电子可透过屏障与反应室分离，所述电子透过屏障提供电子束通过的窗口。 电子被加速到电子发生室中所需的能量，并通过势垒传递到反应室，其中输入气体源将输入气体引入反应室。 输入气体可以与反应室内的电子束反应形成包含等离子体或浓度的臭氧的输出气体，并且输出气体从反应室通到晶片处理室。

公开(公告)号：US09576765B2

公开(公告)日：2017-02-21

申请号：US14488862

申请日：2014-09-17

Applicant: Kaveh Bakhtari

Inventor： Kaveh Bakhtari

IPC: H01J33/04 ,  H01J1/16 ,  H01J33/00

CPC classification number: H01J33/04 ,  H01J1/16 ,  H01J33/00

Abstract: An electron beam emitter comprises an electron emission source capable of emitting electrons; a vacuum chamber containing the electron emission source; and a transmission window that keeps airtightness of the vacuum chamber and is capable of transmitting the electrons from the electron emission source. The transmission window includes a foil that transmits the electrons and a grid that does not transmit the electrons. The electron emission source includes an emission portion that emits the electrons and a non-emission portion that does not emit the electrons. The emission portion has a lower work function than the non-emission portion. The non-emission portion is prepared so as to prevent the electrons from reaching the grid.

Abstract translation: 电子束发射器包括能够发射电子的电子发射源; 包含电子发射源的真空室; 以及保持真空室的气密并且能够从电子发射源透射电子的透射窗。 透射窗包括传递电子的箔和不透射电子的栅格。 电子发射源包括发射电子的发射部分和不发射电子的非发射部分。 发光部的功函数比非发光部低。 制备非发射部分以防止电子到达电网。

公开(公告)号：US20080302652A1

公开(公告)日：2008-12-11

申请号：US12132294

申请日：2008-06-03

Applicant: William Robert Entley ,  Xing Chen ,  Ali Shajii ,  Kaveh Bakhtari ,  Andrew Cowe

Inventor： William Robert Entley ,  Xing Chen ,  Ali Shajii ,  Kaveh Bakhtari ,  Andrew Cowe

IPC: H05H1/24

CPC classification number: H01J37/3299 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

Abstract: A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.

Abstract translation: 一种用于产生用于引入半导体处理室的激发气体的系统。 该系统包括用于产生等离子体的等离子体源。 等离子体源包括等离子体室和用于从气体源接收工艺气体的气体入口。 气体流量控制器耦合到气体入口，用于经由气体入口控制从气体源到等离子体室的处理气体的入口流量。 该系统包括用于检测从第一处理气体到第二处理气体的转变的控制回路，并且用于在大于约300毫秒的时间段内将第二处理气体的入口流量从约0sccm至约10,000sccm调节 以将等离子体施加的瞬态热通量负载保持在等离子体室的内表面低于等离子体室的汽化温度。