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    Organic electronic element and method for manufacturing organic electronic element
    2.
    发明授权
    Organic electronic element and method for manufacturing organic electronic element 有权
    有机电子元件及其制造方法

    公开(公告)号：US09577211B2

    公开(公告)日：2017-02-21

    申请号：US14378687

    申请日：2013-02-06

    Applicant: LINTEC Corporation

    Inventor： Satoshi Naganawa

    IPC: H01L51/52 ,  H01L51/44 ,  H01L51/56

    CPC classification number: H01L51/5237 ,  H01L51/448 ,  H01L51/5253 ,  H01L51/5275 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

    Abstract: Provided are an organic electronic element equipped with a sealing layer having excellent gas barrier properties, transparency and the like, and a method for efficiently manufacturing such an organic electronic element. Disclosed are an organic electronic element including, on a substrate, a first electrode and a second electrode facing each other, with at least one organic functional layer being interposed therebetween, and a method for manufacturing such an organic electronic element, characterized in that a sealing layer is directly provided along the top surface and the lateral surface of the organic electronic element, and the sealing layer is obtained by implanting plasma ions into a coating film containing a silicon compound as a main component.

    Abstract translation: 提供一种具有优异的阻气性，透明性等的密封层的有机电子元件和有效地制造这种有机电子元件的方法。 公开了一种有机电子元件，其包括在基板上彼此面对的第一电极和第二电极，其间插入有至少一个有机功能层，以及这种有机电子元件的制造方法，其特征在于， 层沿着有机电子元件的顶表面和侧面直接设置，通过将等离子体离子注入到以硅化合物为主要成分的涂膜中而获得密封层。

    ION IMPLANTATION DEVICE
    3.
    发明申请
    ION IMPLANTATION DEVICE 有权
    离子植入装置

    公开(公告)号：US20150206700A1

    公开(公告)日：2015-07-23

    申请号：US14420777

    申请日：2013-09-12

    Applicant: LINTEC Corporation

    Inventor： Satoshi Naganawa ,  Daisuke Goto ,  Suguru Kenmochi

    IPC: H01J37/04 ,  H01J37/317

    CPC classification number: H01J37/04 ,  C23C14/48 ,  C23C14/562 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/3277 ,  H05H1/46 ,  H05H2001/485

    Abstract: An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound.

    Abstract translation: 一种离子注入装置，其具有真空室（11），在其外周部分的一部分卷绕有薄膜（2）的部分上的电极辊（13），向所述真空室施加电压的电压施加装置（21） 电极辊和气体引入装置（31），其将气体引入真空室，其中通过电压施加装置将电压施加到电极辊，并且气体通过气体引入装置引入，并且 在膜的表面上进行离子注入工艺。 此外，电极构件（42）设置成与其上缠绕有薄膜的电极辊的表面相对。

    Ion implantation device
    4.
    发明授权
    Ion implantation device 有权
    离子注入装置

    公开(公告)号：US09330880B2

    公开(公告)日：2016-05-03

    申请号：US14420777

    申请日：2013-09-12

    Applicant: LINTEC Corporation

    Inventor： Satoshi Naganawa ,  Daisuke Goto ,  Suguru Kenmochi

    IPC: G21K5/04 ,  H01J37/04 ,  C23C14/48 ,  H05H1/46 ,  H01J37/32 ,  C23C14/56 ,  H01J37/317 ,  H05H1/48

    CPC classification number: H01J37/04 ,  C23C14/48 ,  C23C14/562 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/3277 ,  H05H1/46 ,  H05H2001/485

    Abstract: An ion implantation device equipped with a vacuum chamber (11), an electrode roll (13) on a portion of the outer circumferential part of which a film (2) is wound, a voltage application means (21) that applies a voltage to the electrode roll, and a gas introduction means (31) that introduces a gas into the vacuum chamber, wherein a voltage is applied to the electrode roll by means of the voltage application means and a gas is introduced by means of the gas introduction means, and an ion implantation process is performed on the surface of the film. In addition, electrode members (42) are provided opposing the surface of the electrode roll on which the film is wound.

    Abstract translation: 一种离子注入装置，其具有真空室（11），在其外周部分的一部分卷绕有薄膜（2）的部分上的电极辊（13），向所述真空室施加电压的电压施加装置（21） 电极辊和气体引入装置（31），其将气体引入真空室，其中通过电压施加装置将电压施加到电极辊，并且气体通过气体引入装置引入，并且 在膜的表面上进行离子注入工艺。 此外，电极构件（42）设置成与其上缠绕有薄膜的电极辊的表面相对。

    Gas barrier film and method for producing gas barrier film
    5.
    发明授权
    Gas barrier film and method for producing gas barrier film 有权
    阻气膜及其制造方法

    公开(公告)号：US09234272B2

    公开(公告)日：2016-01-12

    申请号：US14354252

    申请日：2012-10-12

    Applicant: LINTEC CORPORATION

    Inventor： Satoshi Naganawa ,  Yuta Suzuki

    IPC: C23C14/48 ,  C01B21/082 ,  C08J7/12 ,  C08J7/04 ,  C23C14/06

    CPC classification number: C23C14/48 ,  C01B21/0823 ,  C08J7/047 ,  C08J7/123 ,  C08J2367/02 ,  C08J2483/16 ,  C23C14/0676 ,  Y10T428/265

    Abstract: Disclosed are a gas barrier film obtained by forming a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer contains at least oxygen atoms, silicon atoms and nitrogen atoms, and in connection with the amount of nitrogen, the amount of silicon and the amount of oxygen measured by an XPS analysis, the gas barrier layer includes a first region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen; a second region constituted in the order of the amount of silicon>the amount of oxygen>the amount of nitrogen; and a third region constituted in the order of the amount of oxygen>the amount of silicon>the amount of nitrogen, from a surface side toward a base material side.

    Abstract translation: 公开了通过在基材上形成阻气层而获得的阻气膜，以及其中气体阻隔层至少含有氧原子，硅原子和氮原子并且连接的阻气膜的制造方法 通过XPS分析测量的氮的量，硅的量和氧的量，阻气层包括以氧的量>硅的量>氮的量的顺序构成的第一区; 以硅的量>氧的量>氮的量的顺序构成的第二区域; 以及从表面侧朝向基材侧的氧的量>硅的量>氮的量的顺序构成的第三区域。

    GAS BARRIER FILM AND GAS BARRIER FILM PRODUCTION METHOD
    6.
    发明申请
    GAS BARRIER FILM AND GAS BARRIER FILM PRODUCTION METHOD 有权
    气体阻隔膜和气体阻隔膜生产方法

    公开(公告)号：US20150287954A1

    公开(公告)日：2015-10-08

    申请号：US14367252

    申请日：2012-11-27

    Applicant: LINTEC Corporation

    Inventor： Satoshi Naganawa ,  Yuta Suzuki

    IPC: H01L51/52 ,  C23C14/48

    CPC classification number: H01L51/5253 ,  C08J7/047 ,  C08J2367/02 ,  C08J2483/16 ,  C23C14/48 ,  Y10T428/24942

    Abstract: The present invention is aiming to provide a gas barrier film having excellent gas barrier properties and also having superior transparency and the like, and an efficient method for producing such a gas barrier film.The present invention provides a gas barrier film having a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer includes, from the surface side toward the base material side, a first region and a second region having different refractive indices, the value of the refractive index in the first region is adjusted to a value within the range of 1.50 to 1.68, and the value of the refractive index in the second region is adjusted to a value within the range of 1.40 to below 1.50.

    Abstract translation: 本发明的目的在于提供阻气性优异且透明性优异的阻气膜，以及制造这种阻气膜的有效方法。 本发明提供一种在基材上具有阻气层的阻气膜及其制造方法，其中阻气层从表面侧向基材侧包括第一区域 和具有不同折射率的第二区域，将第一区域中的折射率值调整为1.50至1.68的范围内的值，将第二区域中的折射率值调整为 范围1.40〜1.50。

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